NL185742C - Halfgeleiderschakelinrichting bestaande uit een door middel van licht te besturen thyristorschakelaar voor beide stroomrichtingen. - Google Patents
Halfgeleiderschakelinrichting bestaande uit een door middel van licht te besturen thyristorschakelaar voor beide stroomrichtingen.Info
- Publication number
- NL185742C NL185742C NL7904684A NL7904684A NL185742C NL 185742 C NL185742 C NL 185742C NL 7904684 A NL7904684 A NL 7904684A NL 7904684 A NL7904684 A NL 7904684A NL 185742 C NL185742 C NL 185742C
- Authority
- NL
- Netherlands
- Prior art keywords
- switch
- semi
- light
- flow directions
- controlled thyristor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US91631978A | 1978-06-16 | 1978-06-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL7904684A NL7904684A (nl) | 1979-12-18 |
| NL185742C true NL185742C (nl) | 1990-07-02 |
Family
ID=25437060
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7904684A NL185742C (nl) | 1978-06-16 | 1979-06-14 | Halfgeleiderschakelinrichting bestaande uit een door middel van licht te besturen thyristorschakelaar voor beide stroomrichtingen. |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS553694A (nl) |
| DE (1) | DE2922926C2 (nl) |
| FR (1) | FR2434486A1 (nl) |
| NL (1) | NL185742C (nl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
| JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
| US4535251A (en) * | 1982-12-21 | 1985-08-13 | International Rectifier Corporation | A.C. Solid state relay circuit and structure |
| JP2633585B2 (ja) * | 1987-10-16 | 1997-07-23 | 株式会社東芝 | 半導体装置 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR1546890A (fr) * | 1966-11-30 | 1968-11-22 | Philips Nv | Circuit de relais électronique |
| US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
| GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
| US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
| SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
-
1979
- 1979-05-31 JP JP6877879A patent/JPS553694A/ja active Granted
- 1979-06-06 DE DE19792922926 patent/DE2922926C2/de not_active Expired
- 1979-06-11 FR FR7914889A patent/FR2434486A1/fr active Granted
- 1979-06-14 NL NL7904684A patent/NL185742C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2434486B1 (nl) | 1984-09-07 |
| JPS553694A (en) | 1980-01-11 |
| JPS6123666B2 (nl) | 1986-06-06 |
| DE2922926C2 (de) | 1986-05-07 |
| FR2434486A1 (fr) | 1980-03-21 |
| NL7904684A (nl) | 1979-12-18 |
| DE2922926A1 (de) | 1979-12-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| V1 | Lapsed because of non-payment of the annual fee |