NL7904684A - Door licht activeerbare nuldoorgangsschakelaar die voor netspanningen kan worden toegepast. - Google Patents

Door licht activeerbare nuldoorgangsschakelaar die voor netspanningen kan worden toegepast.

Info

Publication number
NL7904684A
NL7904684A NL7904684A NL7904684A NL7904684A NL 7904684 A NL7904684 A NL 7904684A NL 7904684 A NL7904684 A NL 7904684A NL 7904684 A NL7904684 A NL 7904684A NL 7904684 A NL7904684 A NL 7904684A
Authority
NL
Netherlands
Prior art keywords
light
power supplies
transfer switch
activatable
zero
Prior art date
Application number
NL7904684A
Other languages
English (en)
Other versions
NL185742C (nl
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of NL7904684A publication Critical patent/NL7904684A/nl
Application granted granted Critical
Publication of NL185742C publication Critical patent/NL185742C/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13Modifications for switching at zero crossing
    • H03K17/136Modifications for switching at zero crossing in thyristor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
NL7904684A 1978-06-16 1979-06-14 Halfgeleiderschakelinrichting bestaande uit een door middel van licht te besturen thyristorschakelaar voor beide stroomrichtingen. NL185742C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91631978A 1978-06-16 1978-06-16

Publications (2)

Publication Number Publication Date
NL7904684A true NL7904684A (nl) 1979-12-18
NL185742C NL185742C (nl) 1990-07-02

Family

ID=25437060

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7904684A NL185742C (nl) 1978-06-16 1979-06-14 Halfgeleiderschakelinrichting bestaande uit een door middel van licht te besturen thyristorschakelaar voor beide stroomrichtingen.

Country Status (4)

Country Link
JP (1) JPS553694A (nl)
DE (1) DE2922926C2 (nl)
FR (1) FR2434486A1 (nl)
NL (1) NL185742C (nl)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
JP2633585B2 (ja) * 1987-10-16 1997-07-23 株式会社東芝 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1546890A (fr) * 1966-11-30 1968-11-22 Philips Nv Circuit de relais électronique
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel

Also Published As

Publication number Publication date
DE2922926A1 (de) 1979-12-20
FR2434486B1 (nl) 1984-09-07
JPS553694A (en) 1980-01-11
FR2434486A1 (fr) 1980-03-21
JPS6123666B2 (nl) 1986-06-06
DE2922926C2 (de) 1986-05-07
NL185742C (nl) 1990-07-02

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Legal Events

Date Code Title Description
A1A A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee