JPS553694A - Device for triggering monolithic semiconductor - Google Patents
Device for triggering monolithic semiconductorInfo
- Publication number
- JPS553694A JPS553694A JP6877879A JP6877879A JPS553694A JP S553694 A JPS553694 A JP S553694A JP 6877879 A JP6877879 A JP 6877879A JP 6877879 A JP6877879 A JP 6877879A JP S553694 A JPS553694 A JP S553694A
- Authority
- JP
- Japan
- Prior art keywords
- triggering
- monolithic semiconductor
- monolithic
- semiconductor
- triggering monolithic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91631978A | 1978-06-16 | 1978-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS553694A true JPS553694A (en) | 1980-01-11 |
JPS6123666B2 JPS6123666B2 (ja) | 1986-06-06 |
Family
ID=25437060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6877879A Granted JPS553694A (en) | 1978-06-16 | 1979-05-31 | Device for triggering monolithic semiconductor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS553694A (ja) |
DE (1) | DE2922926C2 (ja) |
FR (1) | FR2434486A1 (ja) |
NL (1) | NL185742C (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
JPS59151463A (ja) * | 1982-12-21 | 1984-08-29 | インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン | 固体交流リレ−および光点弧サイリスタ |
JPH01102963A (ja) * | 1987-10-16 | 1989-04-20 | Toshiba Corp | 半導体装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1546890A (fr) * | 1966-11-30 | 1968-11-22 | Philips Nv | Circuit de relais électronique |
US3832732A (en) * | 1973-01-11 | 1974-08-27 | Westinghouse Electric Corp | Light-activated lateral thyristor and ac switch |
GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
SE392783B (sv) * | 1975-06-19 | 1977-04-18 | Asea Ab | Halvledaranordning innefattande en tyristor och en felteffekttransistordel |
-
1979
- 1979-05-31 JP JP6877879A patent/JPS553694A/ja active Granted
- 1979-06-06 DE DE19792922926 patent/DE2922926C2/de not_active Expired
- 1979-06-11 FR FR7914889A patent/FR2434486A1/fr active Granted
- 1979-06-14 NL NL7904684A patent/NL185742C/xx not_active IP Right Cessation
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
JPS637471B2 (ja) * | 1981-12-18 | 1988-02-17 | Sanken Electric Co Ltd | |
JPS59151463A (ja) * | 1982-12-21 | 1984-08-29 | インタ−ナシヨナル・レクチフアイヤ−・コ−ポレ−シヨン | 固体交流リレ−および光点弧サイリスタ |
JPH01102963A (ja) * | 1987-10-16 | 1989-04-20 | Toshiba Corp | 半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
DE2922926A1 (de) | 1979-12-20 |
FR2434486B1 (ja) | 1984-09-07 |
NL7904684A (nl) | 1979-12-18 |
FR2434486A1 (fr) | 1980-03-21 |
JPS6123666B2 (ja) | 1986-06-06 |
DE2922926C2 (de) | 1986-05-07 |
NL185742C (nl) | 1990-07-02 |
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