FR2434486A1 - Procede de fabrication d'un commutateur de passage a zero photosensible - Google Patents
Procede de fabrication d'un commutateur de passage a zero photosensibleInfo
- Publication number
- FR2434486A1 FR2434486A1 FR7914889A FR7914889A FR2434486A1 FR 2434486 A1 FR2434486 A1 FR 2434486A1 FR 7914889 A FR7914889 A FR 7914889A FR 7914889 A FR7914889 A FR 7914889A FR 2434486 A1 FR2434486 A1 FR 2434486A1
- Authority
- FR
- France
- Prior art keywords
- conduction type
- main surface
- metal element
- zones
- trigger circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 239000002184 metal Substances 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/13—Modifications for switching at zero crossing
- H03K17/136—Modifications for switching at zero crossing in thyristor switches
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Thyristors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
a. Procédé de fabrication d'un commutateur de passage à zéro autosensible. b. Déclencheur caractérisé par un moyen métallique en contact avec la première région du second type et en contact avec la première région du premier type, recouvrant la première surface principale, le moyen métallique ayant une périphérie extérieure entourant la limite de la première région du second type sur la surface.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US91631978A | 1978-06-16 | 1978-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2434486A1 true FR2434486A1 (fr) | 1980-03-21 |
FR2434486B1 FR2434486B1 (fr) | 1984-09-07 |
Family
ID=25437060
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7914889A Granted FR2434486A1 (fr) | 1978-06-16 | 1979-06-11 | Procede de fabrication d'un commutateur de passage a zero photosensible |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS553694A (fr) |
DE (1) | DE2922926C2 (fr) |
FR (1) | FR2434486A1 (fr) |
NL (1) | NL185742C (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4400711A (en) * | 1981-03-31 | 1983-08-23 | Rca Corporation | Integrated circuit protection device |
JPS58105572A (ja) * | 1981-12-18 | 1983-06-23 | Sanken Electric Co Ltd | ゼロクロス光サイリスタ |
US4535251A (en) * | 1982-12-21 | 1985-08-13 | International Rectifier Corporation | A.C. Solid state relay circuit and structure |
JP2633585B2 (ja) * | 1987-10-16 | 1997-07-23 | 株式会社東芝 | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1546890A (fr) * | 1966-11-30 | 1968-11-22 | Philips Nv | Circuit de relais électronique |
DE2400711A1 (de) * | 1973-01-11 | 1974-07-18 | Westinghouse Electric Corp | Durch licht steuerbare halbleiterschaltung, insbesondere thyristorschaltung |
DE2625917A1 (de) * | 1975-06-19 | 1976-12-30 | Asea Ab | Halbleiteranordnung |
US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1432697A (en) * | 1973-05-04 | 1976-04-22 | Standard Telephones Cables Ltd | Optically coupled semiconductive switching devices |
-
1979
- 1979-05-31 JP JP6877879A patent/JPS553694A/ja active Granted
- 1979-06-06 DE DE19792922926 patent/DE2922926C2/de not_active Expired
- 1979-06-11 FR FR7914889A patent/FR2434486A1/fr active Granted
- 1979-06-14 NL NL7904684A patent/NL185742C/xx not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1546890A (fr) * | 1966-11-30 | 1968-11-22 | Philips Nv | Circuit de relais électronique |
DE2400711A1 (de) * | 1973-01-11 | 1974-07-18 | Westinghouse Electric Corp | Durch licht steuerbare halbleiterschaltung, insbesondere thyristorschaltung |
US4001866A (en) * | 1974-08-22 | 1977-01-04 | Dionics, Inc. | Monolithic, junction isolated photrac |
DE2625917A1 (de) * | 1975-06-19 | 1976-12-30 | Asea Ab | Halbleiteranordnung |
Also Published As
Publication number | Publication date |
---|---|
NL185742C (nl) | 1990-07-02 |
DE2922926C2 (de) | 1986-05-07 |
NL7904684A (nl) | 1979-12-18 |
JPS553694A (en) | 1980-01-11 |
JPS6123666B2 (fr) | 1986-06-06 |
FR2434486B1 (fr) | 1984-09-07 |
DE2922926A1 (de) | 1979-12-20 |
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