FR2434486B1 - - Google Patents

Info

Publication number
FR2434486B1
FR2434486B1 FR7914889A FR7914889A FR2434486B1 FR 2434486 B1 FR2434486 B1 FR 2434486B1 FR 7914889 A FR7914889 A FR 7914889A FR 7914889 A FR7914889 A FR 7914889A FR 2434486 B1 FR2434486 B1 FR 2434486B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7914889A
Other versions
FR2434486A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of FR2434486A1 publication Critical patent/FR2434486A1/fr
Application granted granted Critical
Publication of FR2434486B1 publication Critical patent/FR2434486B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/79—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar semiconductor switches with more than two PN-junctions, or more than three electrodes, or more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/13—Modifications for switching at zero crossing
    • H03K17/136—Modifications for switching at zero crossing in thyristor switches

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Thyristors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
FR7914889A 1978-06-16 1979-06-11 Procede de fabrication d'un commutateur de passage a zero photosensible Granted FR2434486A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US91631978A 1978-06-16 1978-06-16

Publications (2)

Publication Number Publication Date
FR2434486A1 FR2434486A1 (fr) 1980-03-21
FR2434486B1 true FR2434486B1 (fr) 1984-09-07

Family

ID=25437060

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7914889A Granted FR2434486A1 (fr) 1978-06-16 1979-06-11 Procede de fabrication d'un commutateur de passage a zero photosensible

Country Status (4)

Country Link
JP (1) JPS553694A (fr)
DE (1) DE2922926C2 (fr)
FR (1) FR2434486A1 (fr)
NL (1) NL185742C (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400711A (en) * 1981-03-31 1983-08-23 Rca Corporation Integrated circuit protection device
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
JP2633585B2 (ja) * 1987-10-16 1997-07-23 株式会社東芝 半導体装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1546890A (fr) * 1966-11-30 1968-11-22 Philips Nv Circuit de relais électronique
US3832732A (en) * 1973-01-11 1974-08-27 Westinghouse Electric Corp Light-activated lateral thyristor and ac switch
GB1432697A (en) * 1973-05-04 1976-04-22 Standard Telephones Cables Ltd Optically coupled semiconductive switching devices
US4001866A (en) * 1974-08-22 1977-01-04 Dionics, Inc. Monolithic, junction isolated photrac
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel

Also Published As

Publication number Publication date
NL7904684A (nl) 1979-12-18
FR2434486A1 (fr) 1980-03-21
JPS553694A (en) 1980-01-11
DE2922926A1 (de) 1979-12-20
DE2922926C2 (de) 1986-05-07
NL185742C (nl) 1990-07-02
JPS6123666B2 (fr) 1986-06-06

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