NL165003C - Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd. - Google Patents

Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd.

Info

Publication number
NL165003C
NL165003C NL7601830.A NL7601830A NL165003C NL 165003 C NL165003 C NL 165003C NL 7601830 A NL7601830 A NL 7601830A NL 165003 C NL165003 C NL 165003C
Authority
NL
Netherlands
Prior art keywords
siliconed
manufacturing
semiconductor device
heat treatment
silicon dioxide
Prior art date
Application number
NL7601830.A
Other languages
English (en)
Dutch (nl)
Other versions
NL165003B (nl
NL7601830A (nl
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of NL7601830A publication Critical patent/NL7601830A/xx
Publication of NL165003B publication Critical patent/NL165003B/xx
Application granted granted Critical
Publication of NL165003C publication Critical patent/NL165003C/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3211—Nitridation of silicon-containing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/112—Nitridation, direct, of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/113—Nitrides of boron or aluminum or gallium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/114—Nitrides of silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/117—Oxidation, selective

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Formation Of Insulating Films (AREA)
NL7601830.A 1975-02-21 1976-02-23 Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd. NL165003C (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50021008A JPS5197385A (en) 1975-02-21 1975-02-21 Handotaisochino seizohoho

Publications (3)

Publication Number Publication Date
NL7601830A NL7601830A (nl) 1976-08-24
NL165003B NL165003B (nl) 1980-09-15
NL165003C true NL165003C (nl) 1981-02-16

Family

ID=12043029

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7601830.A NL165003C (nl) 1975-02-21 1976-02-23 Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd.

Country Status (3)

Country Link
US (1) US4016007A (enExample)
JP (1) JPS5197385A (enExample)
NL (1) NL165003C (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922380B2 (ja) * 1975-12-03 1984-05-26 株式会社東芝 ハンドウタイソシノ セイゾウホウホウ
US4140547A (en) * 1976-09-09 1979-02-20 Tokyo Shibaura Electric Co., Ltd. Method for manufacturing MOSFET devices by ion-implantation
US4157268A (en) * 1977-06-16 1979-06-05 International Business Machines Corporation Localized oxidation enhancement for an integrated injection logic circuit
US4131910A (en) * 1977-11-09 1978-12-26 Bell Telephone Laboratories, Incorporated High voltage semiconductor devices
US4154873A (en) * 1977-11-10 1979-05-15 Burr-Brown Research Corporation Method of increasing field inversion threshold voltage and reducing leakage current and electrical noise in semiconductor devices
DE2803431A1 (de) * 1978-01-26 1979-08-02 Siemens Ag Verfahren zur herstellung von mos-transistoren
US4262056A (en) * 1978-09-15 1981-04-14 The United States Of America As Represented By The Secretary Of The Navy Ion-implanted multilayer optical interference filter
JPS5650532A (en) * 1979-10-01 1981-05-07 Hitachi Ltd Manufacture of semiconductor device
JPS56161646A (en) * 1980-05-19 1981-12-12 Fujitsu Ltd Manufacture of semiconductor device
US4465705A (en) * 1980-05-19 1984-08-14 Matsushita Electric Industrial Co., Ltd. Method of making semiconductor devices
US4341818A (en) * 1980-06-16 1982-07-27 Bell Telephone Laboratories, Incorporated Method for producing silicon dioxide/polycrystalline silicon interfaces
JPS5737830A (en) * 1980-08-19 1982-03-02 Mitsubishi Electric Corp Manufacture of semiconductor device
NL187328C (nl) * 1980-12-23 1991-08-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
EP0067738A3 (en) * 1981-05-26 1986-06-11 FAIRCHILD CAMERA & INSTRUMENT CORPORATION Method of reducing encroachment in a semiconductor device
JPS5873156A (ja) * 1981-10-28 1983-05-02 Hitachi Ltd 半導体装置
US4407696A (en) * 1982-12-27 1983-10-04 Mostek Corporation Fabrication of isolation oxidation for MOS circuit
US4824795A (en) * 1985-12-19 1989-04-25 Siliconix Incorporated Method for obtaining regions of dielectrically isolated single crystal silicon
US4774197A (en) * 1986-06-17 1988-09-27 Advanced Micro Devices, Inc. Method of improving silicon dioxide
KR900005038B1 (ko) * 1987-07-31 1990-07-18 삼성전자 주식회사 고저항 다결정 실리콘의 제조방법
US5192707A (en) * 1991-07-31 1993-03-09 Sgs-Thomson Microelectronics, Inc. Method of forming isolated regions of oxide
JP2905032B2 (ja) * 1992-05-12 1999-06-14 シャープ株式会社 金属配線の製造方法
KR970003893B1 (ko) * 1993-10-25 1997-03-22 삼성전자 주식회사 반도체 장치의 소자 분리 방법
JP3045946B2 (ja) * 1994-05-09 2000-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション 半導体デバイスの製造方法
US5631189A (en) * 1994-07-13 1997-05-20 Nippon Telegraph And Telephone Corporation Method of forming element isolation region
US6156603A (en) * 1998-12-01 2000-12-05 United Mircroelectronics Corp. Manufacturing method for reducing the thickness of a dielectric layer
TW200531284A (en) * 2003-07-29 2005-09-16 Samsung Electronics Co Ltd Thin film array panel and manufacturing method thereof

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3622382A (en) * 1969-05-05 1971-11-23 Ibm Semiconductor isolation structure and method of producing
US3666548A (en) * 1970-01-06 1972-05-30 Ibm Monocrystalline semiconductor body having dielectrically isolated regions and method of forming
US3897274A (en) * 1971-06-01 1975-07-29 Texas Instruments Inc Method of fabricating dielectrically isolated semiconductor structures
US3775191A (en) * 1971-06-28 1973-11-27 Bell Canada Northern Electric Modification of channel regions in insulated gate field effect transistors
NL7204741A (enExample) * 1972-04-08 1973-10-10
US3853633A (en) * 1972-12-04 1974-12-10 Motorola Inc Method of making a semi planar insulated gate field-effect transistor device with implanted field
CA1001771A (en) * 1973-01-15 1976-12-14 Fairchild Camera And Instrument Corporation Method of mos transistor manufacture and resulting structure
US3966501A (en) * 1973-03-23 1976-06-29 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor devices

Also Published As

Publication number Publication date
NL165003B (nl) 1980-09-15
JPS5197385A (en) 1976-08-26
NL7601830A (nl) 1976-08-24
US4016007A (en) 1977-04-05
JPS5428272B2 (enExample) 1979-09-14

Similar Documents

Publication Publication Date Title
NL165003C (nl) Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd.
NL176818C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL190770C (nl) Inrichting voor het produceren van een siliciumoxidelaag op halfgeleiderplaatjes.
NL7510336A (nl) Halfgeleiderinrichting en werkwijze voor het ver- vaardigen daarvan.
NL186478C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL186608C (nl) Werkwijze voor het vervaardigen van een geintegreerde halfgeleiderinjectie-logicainrichting.
NL7508940A (nl) Silicon-catheter en werkwijze voor het vervaar- digen daarvan.
NL165002B (nl) Werkwijze voor het vervaardigen van een halfgeleiderin- richting, waarbij oneffenheden van het oppervlak van een substraat worden verwijderd.
NL187461C (nl) Halfgeleiderinrichting.
NL7501529A (nl) Veldeffect halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan.
NL187508C (nl) Werkwijze voor het vervaardigen van halfgeleiderinrichtingen.
NL185884C (nl) Halfgeleiderinrichting.
NL170901C (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL176416C (nl) Werkwijze voor het vervaardigen van een thermo-electrische halfgeleiderinrichting.
NL161305C (nl) Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
NL161302B (nl) Werkwijze voor het vervaardigen van een halfgeleiderin- richting.
NL7608923A (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7601576A (nl) Werkwijze voor het maken van een halfgeleider- -inrichting.
NL7507742A (nl) Werkwijze voor ionenimplantatie in een halfgeleider- drager en halfgeleiderinrichting vervaardigd vol- gens deze werkwijze.
NL180264C (nl) Bipolaire transistor voor een geintegreerde halfgeleiderschakeling en werkwijzen voor het vervaardigen daarvan.
NL158022B (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7710635A (nl) Werkwijze voor het vervaardigen van een halfgeleiderinrichting.
NL7501990A (nl) Halfgeleiderinrichting, alsmede werkwijze voor de vervaardiging daarvan.
NL7712388A (nl) Halfgeleiderinrichting en werkwijze voor het vervaardigen daarvan.
NL7409192A (nl) Werkwijze voor het vervaardigen van een basis voor een halfgeleiderinrichting, inrichting voor het toepassen van de werkwijze en basis voor een halfgeleiderinrichting vervaardigd onder toepassing van de werkwijze.

Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee

Effective date: 19950901