JPS5428272B2 - - Google Patents
Info
- Publication number
- JPS5428272B2 JPS5428272B2 JP2100875A JP2100875A JPS5428272B2 JP S5428272 B2 JPS5428272 B2 JP S5428272B2 JP 2100875 A JP2100875 A JP 2100875A JP 2100875 A JP2100875 A JP 2100875A JP S5428272 B2 JPS5428272 B2 JP S5428272B2
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3211—Nitridation of silicon-containing layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/085—Isolated-integrated
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/112—Nitridation, direct, of silicon
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/113—Nitrides of boron or aluminum or gallium
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/114—Nitrides of silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/117—Oxidation, selective
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50021008A JPS5197385A (en) | 1975-02-21 | 1975-02-21 | Handotaisochino seizohoho |
| US05/658,065 US4016007A (en) | 1975-02-21 | 1976-02-13 | Method for fabricating a silicon device utilizing ion-implantation and selective oxidation |
| NL7601830.A NL165003C (nl) | 1975-02-21 | 1976-02-23 | Werkwijze voor het vervaardigen van een halfgeleider- inrichting, waarbij tijdens een warmtebehandeling in een oxyderende omgeving een dik, gedeeltelijk in een halfgeleiderlichaam van silicium verzonken patroon van siliciumdioxyde wordt gevormd. |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP50021008A JPS5197385A (en) | 1975-02-21 | 1975-02-21 | Handotaisochino seizohoho |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5197385A JPS5197385A (en) | 1976-08-26 |
| JPS5428272B2 true JPS5428272B2 (enExample) | 1979-09-14 |
Family
ID=12043029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP50021008A Granted JPS5197385A (en) | 1975-02-21 | 1975-02-21 | Handotaisochino seizohoho |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4016007A (enExample) |
| JP (1) | JPS5197385A (enExample) |
| NL (1) | NL165003C (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5922380B2 (ja) * | 1975-12-03 | 1984-05-26 | 株式会社東芝 | ハンドウタイソシノ セイゾウホウホウ |
| US4140547A (en) * | 1976-09-09 | 1979-02-20 | Tokyo Shibaura Electric Co., Ltd. | Method for manufacturing MOSFET devices by ion-implantation |
| US4157268A (en) * | 1977-06-16 | 1979-06-05 | International Business Machines Corporation | Localized oxidation enhancement for an integrated injection logic circuit |
| US4131910A (en) * | 1977-11-09 | 1978-12-26 | Bell Telephone Laboratories, Incorporated | High voltage semiconductor devices |
| US4154873A (en) * | 1977-11-10 | 1979-05-15 | Burr-Brown Research Corporation | Method of increasing field inversion threshold voltage and reducing leakage current and electrical noise in semiconductor devices |
| DE2803431A1 (de) * | 1978-01-26 | 1979-08-02 | Siemens Ag | Verfahren zur herstellung von mos-transistoren |
| US4262056A (en) * | 1978-09-15 | 1981-04-14 | The United States Of America As Represented By The Secretary Of The Navy | Ion-implanted multilayer optical interference filter |
| JPS5650532A (en) * | 1979-10-01 | 1981-05-07 | Hitachi Ltd | Manufacture of semiconductor device |
| JPS56161646A (en) * | 1980-05-19 | 1981-12-12 | Fujitsu Ltd | Manufacture of semiconductor device |
| US4465705A (en) * | 1980-05-19 | 1984-08-14 | Matsushita Electric Industrial Co., Ltd. | Method of making semiconductor devices |
| US4341818A (en) * | 1980-06-16 | 1982-07-27 | Bell Telephone Laboratories, Incorporated | Method for producing silicon dioxide/polycrystalline silicon interfaces |
| JPS5737830A (en) * | 1980-08-19 | 1982-03-02 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| NL187328C (nl) * | 1980-12-23 | 1991-08-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
| EP0067738A3 (en) * | 1981-05-26 | 1986-06-11 | FAIRCHILD CAMERA & INSTRUMENT CORPORATION | Method of reducing encroachment in a semiconductor device |
| JPS5873156A (ja) * | 1981-10-28 | 1983-05-02 | Hitachi Ltd | 半導体装置 |
| US4407696A (en) * | 1982-12-27 | 1983-10-04 | Mostek Corporation | Fabrication of isolation oxidation for MOS circuit |
| US4824795A (en) * | 1985-12-19 | 1989-04-25 | Siliconix Incorporated | Method for obtaining regions of dielectrically isolated single crystal silicon |
| US4774197A (en) * | 1986-06-17 | 1988-09-27 | Advanced Micro Devices, Inc. | Method of improving silicon dioxide |
| KR900005038B1 (ko) * | 1987-07-31 | 1990-07-18 | 삼성전자 주식회사 | 고저항 다결정 실리콘의 제조방법 |
| US5192707A (en) * | 1991-07-31 | 1993-03-09 | Sgs-Thomson Microelectronics, Inc. | Method of forming isolated regions of oxide |
| JP2905032B2 (ja) * | 1992-05-12 | 1999-06-14 | シャープ株式会社 | 金属配線の製造方法 |
| KR970003893B1 (ko) * | 1993-10-25 | 1997-03-22 | 삼성전자 주식회사 | 반도체 장치의 소자 분리 방법 |
| JP3045946B2 (ja) * | 1994-05-09 | 2000-05-29 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 半導体デバイスの製造方法 |
| US5631189A (en) * | 1994-07-13 | 1997-05-20 | Nippon Telegraph And Telephone Corporation | Method of forming element isolation region |
| US6156603A (en) * | 1998-12-01 | 2000-12-05 | United Mircroelectronics Corp. | Manufacturing method for reducing the thickness of a dielectric layer |
| TW200531284A (en) * | 2003-07-29 | 2005-09-16 | Samsung Electronics Co Ltd | Thin film array panel and manufacturing method thereof |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3622382A (en) * | 1969-05-05 | 1971-11-23 | Ibm | Semiconductor isolation structure and method of producing |
| US3666548A (en) * | 1970-01-06 | 1972-05-30 | Ibm | Monocrystalline semiconductor body having dielectrically isolated regions and method of forming |
| US3897274A (en) * | 1971-06-01 | 1975-07-29 | Texas Instruments Inc | Method of fabricating dielectrically isolated semiconductor structures |
| US3775191A (en) * | 1971-06-28 | 1973-11-27 | Bell Canada Northern Electric | Modification of channel regions in insulated gate field effect transistors |
| NL7204741A (enExample) * | 1972-04-08 | 1973-10-10 | ||
| US3853633A (en) * | 1972-12-04 | 1974-12-10 | Motorola Inc | Method of making a semi planar insulated gate field-effect transistor device with implanted field |
| CA1001771A (en) * | 1973-01-15 | 1976-12-14 | Fairchild Camera And Instrument Corporation | Method of mos transistor manufacture and resulting structure |
| US3966501A (en) * | 1973-03-23 | 1976-06-29 | Mitsubishi Denki Kabushiki Kaisha | Process of producing semiconductor devices |
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1975
- 1975-02-21 JP JP50021008A patent/JPS5197385A/ja active Granted
-
1976
- 1976-02-13 US US05/658,065 patent/US4016007A/en not_active Expired - Lifetime
- 1976-02-23 NL NL7601830.A patent/NL165003C/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL165003C (nl) | 1981-02-16 |
| NL165003B (nl) | 1980-09-15 |
| JPS5197385A (en) | 1976-08-26 |
| NL7601830A (nl) | 1976-08-24 |
| US4016007A (en) | 1977-04-05 |