NL1027195C2 - Belichtingsinrichting en werkwijze voor het meten van de Müller matrix van het optisch samenstel van belichtingsinrichtingen. - Google Patents

Belichtingsinrichting en werkwijze voor het meten van de Müller matrix van het optisch samenstel van belichtingsinrichtingen. Download PDF

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Publication number
NL1027195C2
NL1027195C2 NL1027195A NL1027195A NL1027195C2 NL 1027195 C2 NL1027195 C2 NL 1027195C2 NL 1027195 A NL1027195 A NL 1027195A NL 1027195 A NL1027195 A NL 1027195A NL 1027195 C2 NL1027195 C2 NL 1027195C2
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NL
Netherlands
Prior art keywords
degrees
azimuth
polarized light
light intensity
light beam
Prior art date
Application number
NL1027195A
Other languages
English (en)
Dutch (nl)
Other versions
NL1027195A1 (nl
Inventor
Hiroshi Nomura
Original Assignee
Toshiba Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Toshiba Kk filed Critical Toshiba Kk
Publication of NL1027195A1 publication Critical patent/NL1027195A1/nl
Application granted granted Critical
Publication of NL1027195C2 publication Critical patent/NL1027195C2/nl

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
NL1027195A 2003-10-07 2004-10-07 Belichtingsinrichting en werkwijze voor het meten van de Müller matrix van het optisch samenstel van belichtingsinrichtingen. NL1027195C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003348131A JP3971363B2 (ja) 2003-10-07 2003-10-07 露光装置及び露光装置の光学系のミュラー行列を測定する方法
JP2003348131 2003-10-07

Publications (2)

Publication Number Publication Date
NL1027195A1 NL1027195A1 (nl) 2005-04-08
NL1027195C2 true NL1027195C2 (nl) 2008-02-12

Family

ID=34540417

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1027195A NL1027195C2 (nl) 2003-10-07 2004-10-07 Belichtingsinrichting en werkwijze voor het meten van de Müller matrix van het optisch samenstel van belichtingsinrichtingen.

Country Status (3)

Country Link
US (2) US7084977B2 (enExample)
JP (1) JP3971363B2 (enExample)
NL (1) NL1027195C2 (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006011296A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 偏光素子、偏光素子の製造方法、及び露光装置の評価方法
US7271874B2 (en) * 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
JP4942301B2 (ja) * 2004-11-30 2012-05-30 新光電気工業株式会社 直接露光装置および直接露光方法
US7375799B2 (en) * 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus
JP2006279017A (ja) * 2005-03-02 2006-10-12 Canon Inc 露光装置及び方法、計測装置、並びに、デバイス製造方法
KR20080015146A (ko) * 2005-06-13 2008-02-18 에이에스엠엘 네델란즈 비.브이. 능동 레티클 툴 및 리소그래피 장치
JP4820870B2 (ja) * 2005-06-13 2011-11-24 エーエスエムエル ネザーランズ ビー．ブイ． アクティブレチクルツールおよびリソグラフィ装置
JP2008547015A (ja) * 2005-06-24 2008-12-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照明システムの偏光を特定する方法及び装置
JP4928897B2 (ja) 2005-12-01 2012-05-09 株式会社東芝 偏光評価マスク、偏光評価方法、及び偏光計測装置
US20070261452A1 (en) * 2006-01-05 2007-11-15 Harbert Charles S Aeration or air floors and methods for constructing and using such floors
JP2007188927A (ja) * 2006-01-11 2007-07-26 Canon Inc 露光装置、露光方法及びデバイス製造方法
WO2007080790A1 (ja) 2006-01-13 2007-07-19 National University Corporation Tokyo University Of Agriculture And Technology 計測装置及び計測方法、並びに、特性計測ユニット
JP4816156B2 (ja) * 2006-03-09 2011-11-16 ソニー株式会社 半導体露光装置、露光光偏光状態観測方法および半導体装置の製造方法
WO2007111159A1 (ja) * 2006-03-20 2007-10-04 National University Corporation Tokyo University Of Agriculture And Technology 光学特性計測装置及び光学特性計測方法、並びに、光学特性計測ユニット
JP2008098604A (ja) 2006-09-12 2008-04-24 Canon Inc 露光装置及びデバイス製造方法
JP2009004711A (ja) 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
JP2009068922A (ja) 2007-09-11 2009-04-02 Canon Inc 測定装置、露光装置及びデバイス製造方法
JP5033015B2 (ja) * 2008-02-15 2012-09-26 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
TW201129854A (en) * 2009-08-07 2011-09-01 Toshiba Kk Polarization evaluation mask, exposure device, and polarization evaluation method
US8427645B2 (en) * 2011-01-10 2013-04-23 Nanometrics Incorporated Mueller matrix spectroscopy using chiroptic
JP2012173433A (ja) 2011-02-18 2012-09-10 Toshiba Corp 結像計算方法
WO2013042679A1 (ja) * 2011-09-19 2013-03-28 株式会社ニコン 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
US11029253B2 (en) * 2017-03-30 2021-06-08 Applied Materials Israel Ltd. Computerized method for configuring an inspection system, computer program product and an inspection system
US10816649B1 (en) 2017-09-14 2020-10-27 The United States Of America As Represented By The Secretary Of The Air Force Temporally multiplexed LADAR polarimeter
US11010881B2 (en) 2018-05-16 2021-05-18 The Board Of Trustees Of The University Of Illinois Second-harmonic patterned polarization-analyzed reflection confocal microscope
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法
CN110954481B (zh) * 2019-11-13 2022-07-01 天津大学 导管偏振敏感光学相干层析成像优化平均偏振解调方法
CN113281267B (zh) * 2021-05-14 2022-05-20 华中科技大学 一种双旋转补偿器型穆勒矩阵椭偏仪系统参数的校准方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661560A (en) * 1993-08-23 1997-08-26 Nippon Telegraph And Telephone Public Corporation Elliptical light measuring method
WO2002103310A1 (en) * 2001-06-18 2002-12-27 Hinds Instruments, Inc Birefringence measurement at deep-ultraviolet wavelengths
US20030184749A1 (en) * 2002-03-29 2003-10-02 Shuichi Yabu Birefringence measurement apparatus and method

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5072126A (en) * 1990-10-31 1991-12-10 International Business Machines Corporation Promixity alignment using polarized illumination and double conjugate projection lens
US6208415B1 (en) 1997-06-12 2001-03-27 The Regents Of The University Of California Birefringence imaging in biological tissue using polarization sensitive optical coherent tomography
CA2319729A1 (en) 1998-02-20 1999-08-26 Hinds Instruments, Inc. Birefringence measurement system
CN1168971C (zh) * 1998-04-22 2004-09-29 株式会社理光 双折射测定方法及其装置
US6844972B2 (en) * 2001-10-30 2005-01-18 Mcguire, Jr. James P. Reducing aberration in optical systems comprising cubic crystalline optical elements
US7420675B2 (en) * 2003-06-25 2008-09-02 The University Of Akron Multi-wavelength imaging system

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5661560A (en) * 1993-08-23 1997-08-26 Nippon Telegraph And Telephone Public Corporation Elliptical light measuring method
WO2002103310A1 (en) * 2001-06-18 2002-12-27 Hinds Instruments, Inc Birefringence measurement at deep-ultraviolet wavelengths
US20030184749A1 (en) * 2002-03-29 2003-10-02 Shuichi Yabu Birefringence measurement apparatus and method

Also Published As

Publication number Publication date
NL1027195A1 (nl) 2005-04-08
US20050105087A1 (en) 2005-05-19
US20060146311A1 (en) 2006-07-06
US7283207B2 (en) 2007-10-16
US7084977B2 (en) 2006-08-01
JP2005116732A (ja) 2005-04-28
JP3971363B2 (ja) 2007-09-05

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