JP3971363B2 - 露光装置及び露光装置の光学系のミュラー行列を測定する方法 - Google Patents

露光装置及び露光装置の光学系のミュラー行列を測定する方法 Download PDF

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Publication number
JP3971363B2
JP3971363B2 JP2003348131A JP2003348131A JP3971363B2 JP 3971363 B2 JP3971363 B2 JP 3971363B2 JP 2003348131 A JP2003348131 A JP 2003348131A JP 2003348131 A JP2003348131 A JP 2003348131A JP 3971363 B2 JP3971363 B2 JP 3971363B2
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JP
Japan
Prior art keywords
azimuth angle
light
linear polarizer
polarized light
optical system
Prior art date
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Expired - Fee Related
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JP2003348131A
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English (en)
Japanese (ja)
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JP2005116732A (ja
JP2005116732A5 (enExample
Inventor
博 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2003348131A priority Critical patent/JP3971363B2/ja
Priority to US10/959,500 priority patent/US7084977B2/en
Priority to NL1027195A priority patent/NL1027195C2/nl
Publication of JP2005116732A publication Critical patent/JP2005116732A/ja
Priority to US11/366,536 priority patent/US7283207B2/en
Publication of JP2005116732A5 publication Critical patent/JP2005116732A5/ja
Application granted granted Critical
Publication of JP3971363B2 publication Critical patent/JP3971363B2/ja
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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70566—Polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Polarising Elements (AREA)
JP2003348131A 2003-10-07 2003-10-07 露光装置及び露光装置の光学系のミュラー行列を測定する方法 Expired - Fee Related JP3971363B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003348131A JP3971363B2 (ja) 2003-10-07 2003-10-07 露光装置及び露光装置の光学系のミュラー行列を測定する方法
US10/959,500 US7084977B2 (en) 2003-10-07 2004-10-07 Exposure apparatus and method of measuring Mueller Matrix of optical system of exposure apparatus
NL1027195A NL1027195C2 (nl) 2003-10-07 2004-10-07 Belichtingsinrichting en werkwijze voor het meten van de Müller matrix van het optisch samenstel van belichtingsinrichtingen.
US11/366,536 US7283207B2 (en) 2003-10-07 2006-03-03 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003348131A JP3971363B2 (ja) 2003-10-07 2003-10-07 露光装置及び露光装置の光学系のミュラー行列を測定する方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2006036390A Division JP4185102B2 (ja) 2006-02-14 2006-02-14 露光装置

Publications (3)

Publication Number Publication Date
JP2005116732A JP2005116732A (ja) 2005-04-28
JP2005116732A5 JP2005116732A5 (enExample) 2006-03-30
JP3971363B2 true JP3971363B2 (ja) 2007-09-05

Family

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JP2003348131A Expired - Fee Related JP3971363B2 (ja) 2003-10-07 2003-10-07 露光装置及び露光装置の光学系のミュラー行列を測定する方法

Country Status (3)

Country Link
US (2) US7084977B2 (enExample)
JP (1) JP3971363B2 (enExample)
NL (1) NL1027195C2 (enExample)

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JP2006011296A (ja) * 2004-06-29 2006-01-12 Toshiba Corp 偏光素子、偏光素子の製造方法、及び露光装置の評価方法
US7271874B2 (en) * 2004-11-02 2007-09-18 Asml Holding N.V. Method and apparatus for variable polarization control in a lithography system
JP4942301B2 (ja) * 2004-11-30 2012-05-30 新光電気工業株式会社 直接露光装置および直接露光方法
US7375799B2 (en) * 2005-02-25 2008-05-20 Asml Netherlands B.V. Lithographic apparatus
JP2006279017A (ja) * 2005-03-02 2006-10-12 Canon Inc 露光装置及び方法、計測装置、並びに、デバイス製造方法
KR20080015146A (ko) * 2005-06-13 2008-02-18 에이에스엠엘 네델란즈 비.브이. 능동 레티클 툴 및 리소그래피 장치
JP4820870B2 (ja) * 2005-06-13 2011-11-24 エーエスエムエル ネザーランズ ビー．ブイ． アクティブレチクルツールおよびリソグラフィ装置
JP2008547015A (ja) * 2005-06-24 2008-12-25 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 照明システムの偏光を特定する方法及び装置
JP4928897B2 (ja) 2005-12-01 2012-05-09 株式会社東芝 偏光評価マスク、偏光評価方法、及び偏光計測装置
US20070261452A1 (en) * 2006-01-05 2007-11-15 Harbert Charles S Aeration or air floors and methods for constructing and using such floors
JP2007188927A (ja) * 2006-01-11 2007-07-26 Canon Inc 露光装置、露光方法及びデバイス製造方法
WO2007080790A1 (ja) 2006-01-13 2007-07-19 National University Corporation Tokyo University Of Agriculture And Technology 計測装置及び計測方法、並びに、特性計測ユニット
JP4816156B2 (ja) * 2006-03-09 2011-11-16 ソニー株式会社 半導体露光装置、露光光偏光状態観測方法および半導体装置の製造方法
WO2007111159A1 (ja) * 2006-03-20 2007-10-04 National University Corporation Tokyo University Of Agriculture And Technology 光学特性計測装置及び光学特性計測方法、並びに、光学特性計測ユニット
JP2008098604A (ja) 2006-09-12 2008-04-24 Canon Inc 露光装置及びデバイス製造方法
JP2009004711A (ja) 2007-06-25 2009-01-08 Canon Inc 計測装置、露光装置及びデバイス製造方法
JP2009068922A (ja) 2007-09-11 2009-04-02 Canon Inc 測定装置、露光装置及びデバイス製造方法
JP5033015B2 (ja) * 2008-02-15 2012-09-26 キヤノン株式会社 露光装置、露光方法及びデバイス製造方法
TW201129854A (en) * 2009-08-07 2011-09-01 Toshiba Kk Polarization evaluation mask, exposure device, and polarization evaluation method
US8427645B2 (en) * 2011-01-10 2013-04-23 Nanometrics Incorporated Mueller matrix spectroscopy using chiroptic
JP2012173433A (ja) 2011-02-18 2012-09-10 Toshiba Corp 結像計算方法
WO2013042679A1 (ja) * 2011-09-19 2013-03-28 株式会社ニコン 照明光学装置、光学系ユニット、照明方法、並びに露光方法及び装置
US11029253B2 (en) * 2017-03-30 2021-06-08 Applied Materials Israel Ltd. Computerized method for configuring an inspection system, computer program product and an inspection system
US10816649B1 (en) 2017-09-14 2020-10-27 The United States Of America As Represented By The Secretary Of The Air Force Temporally multiplexed LADAR polarimeter
US11010881B2 (en) 2018-05-16 2021-05-18 The Board Of Trustees Of The University Of Illinois Second-harmonic patterned polarization-analyzed reflection confocal microscope
JP2020122930A (ja) * 2019-01-31 2020-08-13 キヤノン株式会社 計測装置、露光装置及び物品の製造方法
CN110954481B (zh) * 2019-11-13 2022-07-01 天津大学 导管偏振敏感光学相干层析成像优化平均偏振解调方法
CN113281267B (zh) * 2021-05-14 2022-05-20 华中科技大学 一种双旋转补偿器型穆勒矩阵椭偏仪系统参数的校准方法

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JP3679774B2 (ja) * 2002-03-29 2005-08-03 キヤノン株式会社 複屈折測定装置及び方法
US7420675B2 (en) * 2003-06-25 2008-09-02 The University Of Akron Multi-wavelength imaging system

Also Published As

Publication number Publication date
NL1027195A1 (nl) 2005-04-08
US20050105087A1 (en) 2005-05-19
US20060146311A1 (en) 2006-07-06
US7283207B2 (en) 2007-10-16
US7084977B2 (en) 2006-08-01
NL1027195C2 (nl) 2008-02-12
JP2005116732A (ja) 2005-04-28

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