NL1003809C2 - Patroonvormingsproces en belichtingsinrichting. - Google Patents

Patroonvormingsproces en belichtingsinrichting. Download PDF

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Publication number
NL1003809C2
NL1003809C2 NL1003809A NL1003809A NL1003809C2 NL 1003809 C2 NL1003809 C2 NL 1003809C2 NL 1003809 A NL1003809 A NL 1003809A NL 1003809 A NL1003809 A NL 1003809A NL 1003809 C2 NL1003809 C2 NL 1003809C2
Authority
NL
Netherlands
Prior art keywords
light
light source
exposure
intensity distribution
light intensity
Prior art date
Application number
NL1003809A
Other languages
English (en)
Dutch (nl)
Other versions
NL1003809A1 (nl
Inventor
Masaya Uematsu
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL1003809A1 publication Critical patent/NL1003809A1/xx
Application granted granted Critical
Publication of NL1003809C2 publication Critical patent/NL1003809C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1003809A 1995-08-14 1996-08-14 Patroonvormingsproces en belichtingsinrichting. NL1003809C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7206886A JPH0955349A (ja) 1995-08-14 1995-08-14 パターン形成方法および露光装置
JP20688695 1995-08-14

Publications (2)

Publication Number Publication Date
NL1003809A1 NL1003809A1 (nl) 1997-02-18
NL1003809C2 true NL1003809C2 (nl) 1997-04-11

Family

ID=16530685

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1003809A NL1003809C2 (nl) 1995-08-14 1996-08-14 Patroonvormingsproces en belichtingsinrichting.

Country Status (4)

Country Link
US (1) US5982476A (ja)
JP (1) JPH0955349A (ja)
FR (1) FR2738670B1 (ja)
NL (1) NL1003809C2 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100294646B1 (ko) * 1998-06-30 2001-08-07 박종섭 위상반전 마스크
US6480263B1 (en) * 1998-10-22 2002-11-12 Asml Netherlands B.V. Apparatus and method for phase shift photomasking
US6466304B1 (en) * 1998-10-22 2002-10-15 Asm Lithography B.V. Illumination device for projection system and method for fabricating
JP3774588B2 (ja) * 1999-04-06 2006-05-17 キヤノン株式会社 投影露光装置の波面測定方法、及び投影露光装置
TWI285295B (en) 2001-02-23 2007-08-11 Asml Netherlands Bv Illumination optimization in lithography
JP2002313702A (ja) * 2001-04-17 2002-10-25 Mitsubishi Electric Corp 半導体装置の製造方法および半導体装置
US7116400B2 (en) * 2004-06-02 2006-10-03 Asml Netherlands B.V. Illumination assembly, method for providing a radiation beam, lithographic projection apparatus and device manufacturing method
US8796053B2 (en) * 2010-12-21 2014-08-05 Ultratech, Inc. Photolithographic LED fabrication using phase-shift mask
CN117581163A (zh) * 2021-07-05 2024-02-20 株式会社尼康 曝光装置及检查方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0444450A1 (en) * 1990-03-02 1991-09-04 International Business Machines Corporation Latent-image control of lithography tools
US5162867A (en) * 1990-01-26 1992-11-10 Canon Kabushiki Kaisha Surface condition inspection method and apparatus using image transfer
US5338630A (en) * 1992-03-05 1994-08-16 National Semiconductor Corporation Photolithography control system and method using latent image measurements

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984953A (en) * 1987-02-20 1991-01-15 Canon Kabushiki Kaisha Plate-like article conveying system
US5282121A (en) * 1991-04-30 1994-01-25 Vari-Lite, Inc. High intensity lighting projectors
JP2816298B2 (ja) * 1992-10-09 1998-10-27 三菱電機株式会社 投影露光装置及び投影露光方法
JP3291818B2 (ja) * 1993-03-16 2002-06-17 株式会社ニコン 投影露光装置、及び該装置を用いる半導体集積回路製造方法
US5677757A (en) * 1994-03-29 1997-10-14 Nikon Corporation Projection exposure apparatus
JPH07122478A (ja) * 1993-10-27 1995-05-12 Sony Corp パターン投影方法
JP3376690B2 (ja) * 1994-04-28 2003-02-10 株式会社ニコン 露光装置、及び該装置を用いた露光方法
US5477058A (en) * 1994-11-09 1995-12-19 Kabushiki Kaisha Toshiba Attenuated phase-shifting mask with opaque reticle alignment marks
US5792592A (en) * 1996-05-24 1998-08-11 Symetrix Corporation Photosensitive liquid precursor solutions and use thereof in making thin films

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5162867A (en) * 1990-01-26 1992-11-10 Canon Kabushiki Kaisha Surface condition inspection method and apparatus using image transfer
EP0444450A1 (en) * 1990-03-02 1991-09-04 International Business Machines Corporation Latent-image control of lithography tools
US5338630A (en) * 1992-03-05 1994-08-16 National Semiconductor Corporation Photolithography control system and method using latent image measurements

Also Published As

Publication number Publication date
US5982476A (en) 1999-11-09
JPH0955349A (ja) 1997-02-25
FR2738670B1 (fr) 1998-09-25
NL1003809A1 (nl) 1997-02-18
FR2738670A1 (fr) 1997-03-14

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Effective date: 20030301