MY8600579A - Nonvolatile memory device - Google Patents

Nonvolatile memory device

Info

Publication number
MY8600579A
MY8600579A MY579/86A MY8600579A MY8600579A MY 8600579 A MY8600579 A MY 8600579A MY 579/86 A MY579/86 A MY 579/86A MY 8600579 A MY8600579 A MY 8600579A MY 8600579 A MY8600579 A MY 8600579A
Authority
MY
Malaysia
Prior art keywords
memory device
nonvolatile memory
nonvolatile
memory
Prior art date
Application number
MY579/86A
Other languages
English (en)
Inventor
Komari Kazuhiro
Meguro Satoshi
Ito Satoru
Kihara Toshimasa
Wakimoto Harumi
Non
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP56125189A external-priority patent/JPS5827371A/ja
Priority claimed from JP56125204A external-priority patent/JPS5827372A/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY8600579A publication Critical patent/MY8600579A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
MY579/86A 1981-08-12 1986-12-30 Nonvolatile memory device MY8600579A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56125189A JPS5827371A (ja) 1981-08-12 1981-08-12 不揮発性メモリ装置
JP56125204A JPS5827372A (ja) 1981-08-12 1981-08-12 不揮発性メモリ装置

Publications (1)

Publication Number Publication Date
MY8600579A true MY8600579A (en) 1986-12-31

Family

ID=26461697

Family Applications (1)

Application Number Title Priority Date Filing Date
MY579/86A MY8600579A (en) 1981-08-12 1986-12-30 Nonvolatile memory device

Country Status (9)

Country Link
US (1) US4653026A (it)
KR (1) KR900007742B1 (it)
DE (1) DE3230067A1 (it)
FR (1) FR2511539B1 (it)
GB (1) GB2103880B (it)
HK (1) HK45586A (it)
IT (1) IT1159085B (it)
MY (1) MY8600579A (it)
SG (1) SG27186G (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4516313A (en) * 1983-05-27 1985-05-14 Ncr Corporation Unified CMOS/SNOS semiconductor fabrication process
JPS61135165A (ja) * 1984-12-05 1986-06-23 Mitsubishi Electric Corp 半導体メモリ装置
EP0187375B1 (en) * 1984-12-25 1991-07-31 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5010520A (en) * 1987-07-29 1991-04-23 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device with stabilized data write characteristic
JP2748070B2 (ja) * 1992-05-20 1998-05-06 三菱電機株式会社 半導体装置およびその製造方法
BE1008052A3 (nl) * 1994-01-31 1996-01-03 Philips Electronics Nv Halfgeleiderinrichting.
KR0172422B1 (ko) * 1995-06-30 1999-03-30 김광호 스냅백 브레이크다운 현상을 제거한 공통 소오스 라인 제어회로
KR100339019B1 (ko) * 1999-05-31 2002-05-31 윤종용 차동 신호 배선 방법 및 차동 신호 배선을 갖는 인쇄회로기판이 실장된 액정 표시 장치
US20130292756A1 (en) * 2012-05-03 2013-11-07 Globalfoundries Singapore Pte. Ltd. Method and apparatus for utilizing contact-sidewall capacitance in a single poly non-volatile memory cell

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2103573A1 (de) * 1971-01-26 1972-08-03 Siemens Ag Integriertes Halbleiterbauelement, insbesondere verlustarmes Speicherelement, in Komplementärkanal-Technik
DE2503864C3 (de) * 1975-01-30 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Halbleiterbauelement
US4139785A (en) * 1977-05-31 1979-02-13 Texas Instruments Incorporated Static memory cell with inverted field effect transistor
JPS6025837B2 (ja) * 1978-09-14 1985-06-20 株式会社東芝 半導体記憶装置
DE2947311C2 (de) * 1978-11-24 1982-04-01 Hitachi, Ltd., Tokyo Integrierte Halbleiterschaltung
US4267558A (en) * 1979-01-05 1981-05-12 Texas Instruments Incorporated Electrically erasable memory with self-limiting erase
JPS5654693A (en) * 1979-10-05 1981-05-14 Hitachi Ltd Programable rom
US4281397A (en) * 1979-10-29 1981-07-28 Texas Instruments Incorporated Virtual ground MOS EPROM or ROM matrix

Also Published As

Publication number Publication date
HK45586A (en) 1986-06-27
DE3230067A1 (de) 1983-03-03
GB2103880B (en) 1985-05-30
IT1159085B (it) 1987-02-25
US4653026A (en) 1987-03-24
SG27186G (en) 1987-03-27
KR840001390A (ko) 1984-04-30
FR2511539A1 (fr) 1983-02-18
KR900007742B1 (ko) 1990-10-19
FR2511539B1 (fr) 1989-04-28
IT8222819A0 (it) 1982-08-11
GB2103880A (en) 1983-02-23

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