MY185510A - Ni-based sputtering target material and magnetic recording medium - Google Patents

Ni-based sputtering target material and magnetic recording medium

Info

Publication number
MY185510A
MY185510A MYPI2017703335A MYPI2017703335A MY185510A MY 185510 A MY185510 A MY 185510A MY PI2017703335 A MYPI2017703335 A MY PI2017703335A MY PI2017703335 A MYPI2017703335 A MY PI2017703335A MY 185510 A MY185510 A MY 185510A
Authority
MY
Malaysia
Prior art keywords
target material
sputtering target
based sputtering
alloy
recording medium
Prior art date
Application number
MYPI2017703335A
Inventor
Hasegawa Hiroyuki
Matsubara Noriaki
SHINMURA Yumeki
Sawada Toshiyuki
Original Assignee
Sanyo Special Steel Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Special Steel Co Ltd filed Critical Sanyo Special Steel Co Ltd
Publication of MY185510A publication Critical patent/MY185510A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/03—Alloys based on nickel or cobalt based on nickel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C19/00—Alloys based on nickel or cobalt
    • C22C19/07—Alloys based on nickel or cobalt based on cobalt
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously

Abstract

A problem of the present invention is to provide a Ni-based sputtering target material that has a low magnetic permeability, is capable of affording a strong pass-through-flux, and has a high use efficiency in a magnetron sputtering method. In order to solve such a problem, there is provided a Ni-based sputtering target material including an Fex-Niy-Co2-M-based alloy, in which the alloy includes, as M elements, one or more Ml elements selected from W, Mo, Ta, Cr, V, and Nb at the total of 2 to 20 at.% and one or more M2 elements selected from Al, Ga, In, Si, Ge, Sn, Zr, Ti, Hf, B, Cu, P, C, and Ru at the total of 0 to 10 at.%; and the balance consists of Ni, one or two of Fe and Co, and unavoidable impurities; in which, assuming that x + y +z = 100 is satisfied, x is from O to 50, y is from 20 to 98, and z is from 0 to 60; in which the alloy has a microstructure containing an Fea-Nip-Cov phase; in which, assuming that a + f3 +y = 100 is satisfied, f3 is from 20 to 35 and y is 30 or less; and in which the microstructure includes an M element incorporated into the Fe0-Ni?-Cov phase in a solid solution and/or includes an M element formed into a compound with at least one element of Fe, Ni, and Co.
MYPI2017703335A 2015-03-12 2016-03-10 Ni-based sputtering target material and magnetic recording medium MY185510A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015049642 2015-03-12
PCT/JP2016/057596 WO2016143858A1 (en) 2015-03-12 2016-03-10 Ni-BASED SPUTTERING TARGET MATERIAL AND MAGNETIC RECORDING MEDIUM

Publications (1)

Publication Number Publication Date
MY185510A true MY185510A (en) 2021-05-19

Family

ID=56879525

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2017703335A MY185510A (en) 2015-03-12 2016-03-10 Ni-based sputtering target material and magnetic recording medium

Country Status (6)

Country Link
JP (1) JP6254295B2 (en)
CN (1) CN107408397B (en)
MY (1) MY185510A (en)
SG (1) SG11201707351RA (en)
TW (1) TWI663262B (en)
WO (1) WO2016143858A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108914074B (en) * 2018-07-03 2020-07-07 东南大学 High-resistivity alloy thin film material and preparation method and application thereof
JP7385370B2 (en) * 2019-05-07 2023-11-22 山陽特殊製鋼株式会社 Ni-based sputtering target and magnetic recording medium
JPWO2021054136A1 (en) * 2019-09-19 2021-03-25

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06184740A (en) * 1992-12-17 1994-07-05 Hitachi Metals Ltd Target for optomagnetic recording medium and production thereof
JP5726615B2 (en) * 2010-11-22 2015-06-03 山陽特殊製鋼株式会社 Alloy for seed layer of magnetic recording medium and sputtering target material
JP5787274B2 (en) * 2011-08-03 2015-09-30 日立金属株式会社 Method for producing Fe-Co-Ta-based sputtering target material and Fe-Co-Ta-based sputtering target material
JP5748639B2 (en) * 2011-11-17 2015-07-15 田中貴金属工業株式会社 Magnetron sputtering target and method for manufacturing the same

Also Published As

Publication number Publication date
JPWO2016143858A1 (en) 2017-04-27
JP6254295B2 (en) 2017-12-27
SG11201707351RA (en) 2017-10-30
CN107408397A (en) 2017-11-28
WO2016143858A1 (en) 2016-09-15
CN107408397B (en) 2019-07-05
TW201638349A (en) 2016-11-01
TWI663262B (en) 2019-06-21

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