MY183217A - Method for producing multicrystalline silicon - Google Patents
Method for producing multicrystalline siliconInfo
- Publication number
- MY183217A MY183217A MYPI2017000903A MYPI2017000903A MY183217A MY 183217 A MY183217 A MY 183217A MY PI2017000903 A MYPI2017000903 A MY PI2017000903A MY PI2017000903 A MYPI2017000903 A MY PI2017000903A MY 183217 A MY183217 A MY 183217A
- Authority
- MY
- Malaysia
- Prior art keywords
- silicon
- crucible
- silicon layer
- melt
- si3n4
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 239000003638 chemical reducing agent Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000007711 solidification Methods 0.000 abstract 1
- 230000008023 solidification Effects 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102015201988.8A DE102015201988A1 (de) | 2015-02-05 | 2015-02-05 | Verfahren zur Herstellung von multikristallinem Silicium |
| PCT/EP2016/051995 WO2016124509A1 (de) | 2015-02-05 | 2016-01-29 | Verfahren zur herstellung von multikristallinem silicium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY183217A true MY183217A (en) | 2021-02-18 |
Family
ID=55272489
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI2017000903A MY183217A (en) | 2015-02-05 | 2016-01-29 | Method for producing multicrystalline silicon |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP3253908A1 (ja) |
| JP (2) | JP6517355B2 (ja) |
| KR (1) | KR101954785B1 (ja) |
| CN (1) | CN107208308B (ja) |
| DE (1) | DE102015201988A1 (ja) |
| MY (1) | MY183217A (ja) |
| SG (1) | SG11201704945YA (ja) |
| TW (1) | TWI591217B (ja) |
| WO (1) | WO2016124509A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102366166B1 (ko) * | 2021-08-18 | 2022-02-23 | 주식회사 린텍 | 단결정 및 다결정 로드에 의해 도가니 내부에 산소 배출 통로를 형성하는 다결정 실리콘 잉곳 제조방법 |
| CN113716878B (zh) * | 2021-09-10 | 2023-06-16 | 湖南倍晶新材料科技有限公司 | 一种石英表面复合涂层及其制备方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02233514A (ja) | 1989-03-06 | 1990-09-17 | Osaka Titanium Co Ltd | 多結晶シリコンの製造方法 |
| EP1820777A4 (en) * | 2004-11-30 | 2010-01-20 | Noritake Tcf Co Ltd | METHOD FOR PRODUCING A POLYCRYSTALLINE SILICON STAIN |
| US20110177284A1 (en) * | 2009-07-16 | 2011-07-21 | Memc Singapore Pte Ltd. | Silicon wafers and ingots with reduced oxygen content and methods for producing them |
| DE102010000687B4 (de) | 2010-01-05 | 2012-10-18 | Solarworld Innovations Gmbh | Tiegel und Verfahren zur Herstellung von Silizium-Blöcken |
| DE102011003578A1 (de) | 2010-02-25 | 2011-08-25 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V., 80686 | Vorrichtung und Verfahren zur Herstellung von Silizium-Blöcken |
| US20110239933A1 (en) | 2010-04-01 | 2011-10-06 | Bernhard Freudenberg | Device and method for the production of silicon blocks |
| DE102011002599B4 (de) | 2011-01-12 | 2016-06-23 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots und Silizium-Ingot |
| DE102011002598B4 (de) * | 2011-01-12 | 2016-10-06 | Solarworld Innovations Gmbh | Verfahren zur Herstellung eines Silizium-Ingots |
| TWI441962B (zh) * | 2011-10-14 | 2014-06-21 | Sino American Silicon Prod Inc | 矽晶鑄錠及其製造方法（一） |
| CN103088418B (zh) * | 2011-11-01 | 2015-07-08 | 昆山中辰矽晶有限公司 | 硅晶铸锭及其制造方法 |
| US9493357B2 (en) | 2011-11-28 | 2016-11-15 | Sino-American Silicon Products Inc. | Method of fabricating crystalline silicon ingot including nucleation promotion layer |
| DE102011087759B4 (de) * | 2011-12-05 | 2018-11-08 | Solarworld Industries Gmbh | Verfahren zur Herstellung von Silizium-Ingots und Silizium-Ingot |
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Ｍｅｍｃ新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
| US20130193559A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION |
| TWI620838B (zh) * | 2012-02-15 | 2018-04-11 | 中美矽晶製品股份有限公司 | 包含成核促進顆粒之矽晶鑄錠及其製造方法 |
| CN102776555B (zh) * | 2012-04-01 | 2015-11-18 | 江西赛维Ldk太阳能高科技有限公司 | 一种多晶硅锭及其制备方法和多晶硅片 |
| CN102776561B (zh) * | 2012-04-01 | 2017-12-15 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅锭及其制备方法、多晶硅片和多晶硅铸锭用坩埚 |
| CN103074669B (zh) * | 2013-01-29 | 2015-05-13 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅锭及其制备方法和多晶硅片 |
| DE102012206439A1 (de) * | 2012-04-19 | 2013-10-24 | Wacker Chemie Ag | Polykristallines Siliciumgranulat und seine Herstellung |
| DE102012207505A1 (de) | 2012-05-07 | 2013-11-07 | Wacker Chemie Ag | Polykristallines Siliciumgranulat und seine Herstellung |
| WO2014037965A1 (en) * | 2012-09-05 | 2014-03-13 | MEMC ELECTRONIC METERIALS S.p.A. | Method of loading a charge of polysilicon into a crucible |
| TWI541393B (zh) | 2012-12-28 | 2016-07-11 | 中美矽晶製品股份有限公司 | 用於製造矽晶鑄錠之晶種 |
| CN103361722B (zh) * | 2013-07-23 | 2016-03-02 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅锭及其制备方法、多晶硅片和多晶硅铸锭用坩埚 |
| CN103834994A (zh) * | 2014-03-13 | 2014-06-04 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅锭及其制备方法和多晶硅片 |
-
2015
- 2015-02-05 DE DE102015201988.8A patent/DE102015201988A1/de not_active Withdrawn
-
2016
- 2016-01-29 MY MYPI2017000903A patent/MY183217A/en unknown
- 2016-01-29 CN CN201680007941.5A patent/CN107208308B/zh not_active Expired - Fee Related
- 2016-01-29 EP EP16702122.9A patent/EP3253908A1/de not_active Withdrawn
- 2016-01-29 JP JP2017541336A patent/JP6517355B2/ja not_active Expired - Fee Related
- 2016-01-29 KR KR1020177018795A patent/KR101954785B1/ko active IP Right Grant
- 2016-01-29 SG SG11201704945YA patent/SG11201704945YA/en unknown
- 2016-01-29 WO PCT/EP2016/051995 patent/WO2016124509A1/de active Application Filing
- 2016-02-04 TW TW105103649A patent/TWI591217B/zh not_active IP Right Cessation
-
2018
- 2018-12-26 JP JP2018242190A patent/JP2019069898A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| EP3253908A1 (de) | 2017-12-13 |
| TWI591217B (zh) | 2017-07-11 |
| TW201629278A (zh) | 2016-08-16 |
| SG11201704945YA (en) | 2017-08-30 |
| JP6517355B2 (ja) | 2019-05-22 |
| JP2018504359A (ja) | 2018-02-15 |
| KR101954785B1 (ko) | 2019-03-06 |
| WO2016124509A1 (de) | 2016-08-11 |
| JP2019069898A (ja) | 2019-05-09 |
| CN107208308A (zh) | 2017-09-26 |
| KR20170094317A (ko) | 2017-08-17 |
| CN107208308B (zh) | 2020-05-15 |
| DE102015201988A1 (de) | 2016-08-11 |
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