MY181635A - Processes for suppressing minority carrier lifetime degradation in silicon wafers - Google Patents

Processes for suppressing minority carrier lifetime degradation in silicon wafers

Info

Publication number
MY181635A
MY181635A MYPI2013004357A MYPI2013004357A MY181635A MY 181635 A MY181635 A MY 181635A MY PI2013004357 A MYPI2013004357 A MY PI2013004357A MY PI2013004357 A MYPI2013004357 A MY PI2013004357A MY 181635 A MY181635 A MY 181635A
Authority
MY
Malaysia
Prior art keywords
processes
silicon wafers
minority carrier
carrier lifetime
lifetime degradation
Prior art date
Application number
MYPI2013004357A
Other languages
English (en)
Inventor
Robert J Falster
Vladimir V Voronkov
Original Assignee
Memc Singapore Pte Ltd
Corner Star Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Singapore Pte Ltd, Corner Star Ltd filed Critical Memc Singapore Pte Ltd
Publication of MY181635A publication Critical patent/MY181635A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies
    • H10P36/03—Gettering within semiconductor bodies within silicon bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/40—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections
    • H10P95/402—Treatments of semiconductor bodies to modify their internal properties, e.g. to produce internal imperfections of silicon bodies
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
MYPI2013004357A 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers MY181635A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201161493119P 2011-06-03 2011-06-03
US13/486,463 US8969119B2 (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers

Publications (1)

Publication Number Publication Date
MY181635A true MY181635A (en) 2020-12-30

Family

ID=46229958

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2013004357A MY181635A (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers

Country Status (8)

Country Link
US (2) US8969119B2 (enExample)
EP (1) EP2715805B1 (enExample)
JP (1) JP6113152B2 (enExample)
KR (1) KR20140041614A (enExample)
CN (1) CN103582955B (enExample)
MY (1) MY181635A (enExample)
SG (1) SG194904A1 (enExample)
WO (1) WO2012167104A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
DE112013005591C5 (de) * 2013-06-26 2018-10-04 Universität Konstanz Verfahren und Vorrichtung zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
CN103681964A (zh) * 2013-11-29 2014-03-26 奥特斯维能源（太仓）有限公司 太阳能电池片效率衰减后恢复方法
WO2015186288A1 (ja) * 2014-06-02 2015-12-10 株式会社Sumco シリコンウェーハおよびその製造方法
KR101569415B1 (ko) * 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
JP5830147B1 (ja) * 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
DE102016011358A1 (de) * 2015-09-23 2017-03-23 Centrotherm Photovoltaics Ag Verfahren und Vorrichtung zum Passivieren von Defekten in Halbleitersubstraten
EP3208366A1 (en) * 2016-02-16 2017-08-23 Siltronic AG Fz silicon and method to prepare fz silicon
CN107369616B (zh) * 2017-07-07 2021-03-12 苏州阿特斯阳光电力科技有限公司 用于处理半导体基板的方法、得到的半导体基板及其用途
FR3169059A1 (fr) * 2024-11-28 2026-05-29 Commissariat à l'Energie Atomique et aux Energies Alternatives Procédé de traitement d’une plaquette de silicium cristallin utilisée en photovoltaïque

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197717A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 半導体装置の製造方法
EP1295346A4 (en) * 2000-05-05 2006-12-13 Unisearch Ltd METALLIC CONTACTS OF LOW CONTACT AREA FOR PHOTOVOLTAIC DEVICES
JP4607304B2 (ja) * 2000-09-26 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
US7084048B2 (en) * 2004-05-07 2006-08-01 Memc Electronic Materials, Inc. Process for metallic contamination reduction in silicon wafers
DE102006012920B3 (de) * 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法
FR2929755B1 (fr) * 2008-04-03 2011-04-22 Commissariat Energie Atomique Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers
US7943514B2 (en) * 2009-09-03 2011-05-17 Texas Instruments Incorporated Integrated circuits having TSVs including metal gettering dielectric liners
US20120222741A1 (en) * 2009-09-18 2012-09-06 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Solar cell with improved performance
US9105786B2 (en) * 2011-04-18 2015-08-11 Cisco Technology, Inc. Thermal treatment of silicon wafers useful for photovoltaic applications

Also Published As

Publication number Publication date
CN103582955A (zh) 2014-02-12
US20150123248A1 (en) 2015-05-07
JP2014526135A (ja) 2014-10-02
US20130102129A1 (en) 2013-04-25
EP2715805B1 (en) 2016-04-06
US8969119B2 (en) 2015-03-03
SG194904A1 (en) 2013-12-30
JP6113152B2 (ja) 2017-04-12
WO2012167104A4 (en) 2013-02-28
US9142616B2 (en) 2015-09-22
CN103582955B (zh) 2016-06-29
EP2715805A1 (en) 2014-04-09
KR20140041614A (ko) 2014-04-04
WO2012167104A1 (en) 2012-12-06

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