JP6113152B2 - シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 - Google Patents

シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 Download PDF

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JP6113152B2
JP6113152B2 JP2014513752A JP2014513752A JP6113152B2 JP 6113152 B2 JP6113152 B2 JP 6113152B2 JP 2014513752 A JP2014513752 A JP 2014513752A JP 2014513752 A JP2014513752 A JP 2014513752A JP 6113152 B2 JP6113152 B2 JP 6113152B2
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Prior art keywords
wafer
less
silicon wafer
degradation
temperature
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JP2014513752A
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Japanese (ja)
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JP2014526135A5 (enExample
JP2014526135A (ja
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ロバート・ジェイ・ファルスター
ウラジミール・ヴェー・ヴォロンコフ
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SunEdison Products Singapore Pte Ltd
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SunEdison Products Singapore Pte Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Photovoltaic Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2014513752A 2011-06-03 2012-06-01 シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 Expired - Fee Related JP6113152B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201161493119P 2011-06-03 2011-06-03
US61/493,119 2011-06-03
US13/486,463 2012-06-01
PCT/US2012/040492 WO2012167104A1 (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers
US13/486,463 US8969119B2 (en) 2011-06-03 2012-06-01 Processes for suppressing minority carrier lifetime degradation in silicon wafers

Publications (3)

Publication Number Publication Date
JP2014526135A JP2014526135A (ja) 2014-10-02
JP2014526135A5 JP2014526135A5 (enExample) 2017-01-26
JP6113152B2 true JP6113152B2 (ja) 2017-04-12

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JP2014513752A Expired - Fee Related JP6113152B2 (ja) 2011-06-03 2012-06-01 シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法

Country Status (8)

Country Link
US (2) US8969119B2 (enExample)
EP (1) EP2715805B1 (enExample)
JP (1) JP6113152B2 (enExample)
KR (1) KR20140041614A (enExample)
CN (1) CN103582955B (enExample)
MY (1) MY181635A (enExample)
SG (1) SG194904A1 (enExample)
WO (1) WO2012167104A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9634098B2 (en) 2013-06-11 2017-04-25 SunEdison Semiconductor Ltd. (UEN201334164H) Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method
CN105340085B (zh) * 2013-06-26 2018-07-06 康斯坦茨大学 用于生产具有稳定效率的光伏元件的方法和设备
CN103681964A (zh) * 2013-11-29 2014-03-26 奥特斯维能源（太仓）有限公司 太阳能电池片效率衰减后恢复方法
WO2015186288A1 (ja) * 2014-06-02 2015-12-10 株式会社Sumco シリコンウェーハおよびその製造方法
KR101569415B1 (ko) * 2014-06-09 2015-11-16 엘지전자 주식회사 태양 전지의 제조 방법
JP5830147B1 (ja) * 2014-09-04 2015-12-09 信越化学工業株式会社 太陽電池及び太陽電池の製造方法
KR20180058750A (ko) * 2015-09-23 2018-06-01 센트로테에름 인터내셔널 아게 반도체 기판들 내의 결함들을 패시베이팅하기 위한 방법들 및 장치
EP3208366A1 (en) * 2016-02-16 2017-08-23 Siltronic AG Fz silicon and method to prepare fz silicon
CN107369616B (zh) * 2017-07-07 2021-03-12 苏州阿特斯阳光电力科技有限公司 用于处理半导体基板的方法、得到的半导体基板及其用途

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58197717A (ja) * 1982-05-13 1983-11-17 Toshiba Corp 半導体装置の製造方法
WO2001086732A1 (en) * 2000-05-05 2001-11-15 Unisearch Ltd. Low area metal contacts for photovoltaic devices
JP4607304B2 (ja) * 2000-09-26 2011-01-05 信越半導体株式会社 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法
US7084048B2 (en) * 2004-05-07 2006-08-01 Memc Electronic Materials, Inc. Process for metallic contamination reduction in silicon wafers
DE102006012920B3 (de) 2006-03-21 2008-01-24 Universität Konstanz Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法
FR2929755B1 (fr) * 2008-04-03 2011-04-22 Commissariat Energie Atomique Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers
US7943514B2 (en) * 2009-09-03 2011-05-17 Texas Instruments Incorporated Integrated circuits having TSVs including metal gettering dielectric liners
US20120222741A1 (en) * 2009-09-18 2012-09-06 L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude Solar cell with improved performance
US9105786B2 (en) * 2011-04-18 2015-08-11 Cisco Technology, Inc. Thermal treatment of silicon wafers useful for photovoltaic applications

Also Published As

Publication number Publication date
EP2715805A1 (en) 2014-04-09
WO2012167104A1 (en) 2012-12-06
SG194904A1 (en) 2013-12-30
MY181635A (en) 2020-12-30
WO2012167104A4 (en) 2013-02-28
CN103582955A (zh) 2014-02-12
JP2014526135A (ja) 2014-10-02
US20150123248A1 (en) 2015-05-07
US20130102129A1 (en) 2013-04-25
EP2715805B1 (en) 2016-04-06
US8969119B2 (en) 2015-03-03
KR20140041614A (ko) 2014-04-04
CN103582955B (zh) 2016-06-29
US9142616B2 (en) 2015-09-22

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