JP2014526135A5 - - Google Patents
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- Publication number
- JP2014526135A5 JP2014526135A5 JP2014513752A JP2014513752A JP2014526135A5 JP 2014526135 A5 JP2014526135 A5 JP 2014526135A5 JP 2014513752 A JP2014513752 A JP 2014513752A JP 2014513752 A JP2014513752 A JP 2014513752A JP 2014526135 A5 JP2014526135 A5 JP 2014526135A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- less
- silicon wafer
- degradation
- temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201161493119P | 2011-06-03 | 2011-06-03 | |
| US61/493,119 | 2011-06-03 | ||
| US13/486,463 | 2012-06-01 | ||
| PCT/US2012/040492 WO2012167104A1 (en) | 2011-06-03 | 2012-06-01 | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
| US13/486,463 US8969119B2 (en) | 2011-06-03 | 2012-06-01 | Processes for suppressing minority carrier lifetime degradation in silicon wafers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014526135A JP2014526135A (ja) | 2014-10-02 |
| JP2014526135A5 true JP2014526135A5 (enExample) | 2017-01-26 |
| JP6113152B2 JP6113152B2 (ja) | 2017-04-12 |
Family
ID=46229958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2014513752A Expired - Fee Related JP6113152B2 (ja) | 2011-06-03 | 2012-06-01 | シリコンウェハにおいて少数キャリア寿命劣化を抑制する方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US8969119B2 (enExample) |
| EP (1) | EP2715805B1 (enExample) |
| JP (1) | JP6113152B2 (enExample) |
| KR (1) | KR20140041614A (enExample) |
| CN (1) | CN103582955B (enExample) |
| MY (1) | MY181635A (enExample) |
| SG (1) | SG194904A1 (enExample) |
| WO (1) | WO2012167104A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9634098B2 (en) | 2013-06-11 | 2017-04-25 | SunEdison Semiconductor Ltd. (UEN201334164H) | Oxygen precipitation in heavily doped silicon wafers sliced from ingots grown by the Czochralski method |
| CN105340085B (zh) * | 2013-06-26 | 2018-07-06 | 康斯坦茨大学 | 用于生产具有稳定效率的光伏元件的方法和设备 |
| CN103681964A (zh) * | 2013-11-29 | 2014-03-26 | 奥特斯维能源（太仓）有限公司 | 太阳能电池片效率衰减后恢复方法 |
| WO2015186288A1 (ja) * | 2014-06-02 | 2015-12-10 | 株式会社Sumco | シリコンウェーハおよびその製造方法 |
| KR101569415B1 (ko) * | 2014-06-09 | 2015-11-16 | 엘지전자 주식회사 | 태양 전지의 제조 방법 |
| JP5830147B1 (ja) * | 2014-09-04 | 2015-12-09 | 信越化学工業株式会社 | 太陽電池及び太陽電池の製造方法 |
| KR20180058750A (ko) * | 2015-09-23 | 2018-06-01 | 센트로테에름 인터내셔널 아게 | 반도체 기판들 내의 결함들을 패시베이팅하기 위한 방법들 및 장치 |
| EP3208366A1 (en) * | 2016-02-16 | 2017-08-23 | Siltronic AG | Fz silicon and method to prepare fz silicon |
| CN107369616B (zh) * | 2017-07-07 | 2021-03-12 | 苏州阿特斯阳光电力科技有限公司 | 用于处理半导体基板的方法、得到的半导体基板及其用途 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58197717A (ja) * | 1982-05-13 | 1983-11-17 | Toshiba Corp | 半導体装置の製造方法 |
| WO2001086732A1 (en) * | 2000-05-05 | 2001-11-15 | Unisearch Ltd. | Low area metal contacts for photovoltaic devices |
| JP4607304B2 (ja) * | 2000-09-26 | 2011-01-05 | 信越半導体株式会社 | 太陽電池用シリコン単結晶及び太陽電池用シリコン単結晶ウエーハ並びにその製造方法 |
| US7084048B2 (en) * | 2004-05-07 | 2006-08-01 | Memc Electronic Materials, Inc. | Process for metallic contamination reduction in silicon wafers |
| DE102006012920B3 (de) | 2006-03-21 | 2008-01-24 | Universität Konstanz | Verfahren zum Herstellen eines Photovoltaikelements mit stabilisiertem Wirkungsgrad |
| CN100536177C (zh) * | 2008-01-29 | 2009-09-02 | 江阴浚鑫科技有限公司 | 晶体硅太阳能电池的热处理方法 |
| FR2929755B1 (fr) * | 2008-04-03 | 2011-04-22 | Commissariat Energie Atomique | Procede de traitement d'un substrat semi-conducteur par activation thermique d'elements legers |
| US7943514B2 (en) * | 2009-09-03 | 2011-05-17 | Texas Instruments Incorporated | Integrated circuits having TSVs including metal gettering dielectric liners |
| US20120222741A1 (en) * | 2009-09-18 | 2012-09-06 | L'air Liquide, Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Solar cell with improved performance |
| US9105786B2 (en) * | 2011-04-18 | 2015-08-11 | Cisco Technology, Inc. | Thermal treatment of silicon wafers useful for photovoltaic applications |
-
2012
- 2012-06-01 EP EP12726561.9A patent/EP2715805B1/en not_active Not-in-force
- 2012-06-01 US US13/486,463 patent/US8969119B2/en not_active Expired - Fee Related
- 2012-06-01 MY MYPI2013004357A patent/MY181635A/en unknown
- 2012-06-01 JP JP2014513752A patent/JP6113152B2/ja not_active Expired - Fee Related
- 2012-06-01 CN CN201280027376.0A patent/CN103582955B/zh not_active Expired - Fee Related
- 2012-06-01 WO PCT/US2012/040492 patent/WO2012167104A1/en not_active Ceased
- 2012-06-01 SG SG2013083514A patent/SG194904A1/en unknown
- 2012-06-01 KR KR20137035025A patent/KR20140041614A/ko not_active Ceased
-
2015
- 2015-01-14 US US14/596,269 patent/US9142616B2/en not_active Expired - Fee Related
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