MY169363A - Hetero-contact solar cell and method for the production thereof - Google Patents
Hetero-contact solar cell and method for the production thereofInfo
- Publication number
- MY169363A MY169363A MYPI2014703355A MYPI2014703355A MY169363A MY 169363 A MY169363 A MY 169363A MY PI2014703355 A MYPI2014703355 A MY PI2014703355A MY PI2014703355 A MYPI2014703355 A MY PI2014703355A MY 169363 A MY169363 A MY 169363A
- Authority
- MY
- Malaysia
- Prior art keywords
- hetero
- solar cell
- contact
- contact solar
- front side
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 3
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 238000010521 absorption reaction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
- 238000010561 standard procedure Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0376—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including amorphous semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/065—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the graded gap type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE201210104289 DE102012104289A1 (de) | 2012-05-16 | 2012-05-16 | Heterokontakt-Solarzelle und Verfahren zu deren Herstellung |
Publications (1)
Publication Number | Publication Date |
---|---|
MY169363A true MY169363A (en) | 2019-03-26 |
Family
ID=48626098
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MYPI2014703355A MY169363A (en) | 2012-05-16 | 2013-05-06 | Hetero-contact solar cell and method for the production thereof |
Country Status (11)
Country | Link |
---|---|
US (1) | US20150101659A1 (de) |
EP (1) | EP2850661B1 (de) |
JP (1) | JP2015516692A (de) |
KR (1) | KR20150013306A (de) |
CN (1) | CN104380475B (de) |
DE (1) | DE102012104289A1 (de) |
EA (1) | EA201492034A1 (de) |
HU (1) | HUE029311T2 (de) |
MY (1) | MY169363A (de) |
TW (1) | TW201409727A (de) |
WO (1) | WO2013171619A1 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
ES2817539T3 (es) * | 2016-03-23 | 2021-04-07 | Panasonic Ip Man Co Ltd | Célula solar, módulo de célula solar y procedimiento de fabricación de célula solar |
US20190319150A1 (en) * | 2016-04-18 | 2019-10-17 | Ecole Polytechnique Federale De Lausanne (Epfl) | Solar photovoltaic module |
CN107833929A (zh) * | 2017-10-13 | 2018-03-23 | 浙江昱辉阳光能源江苏有限公司 | 一种单面制绒的硅异质结电池及制造方法 |
DE102019123758A1 (de) | 2019-09-05 | 2021-03-11 | Schaeffler Technologies AG & Co. KG | Wellgetriebe zur variablen Ventilsteuerung einer Brennkraftmaschine |
DE102019123785A1 (de) | 2019-09-05 | 2021-03-11 | Meyer Burger (Germany) Gmbh | Rückseitenemitter-Solarzellenstruktur mit einem Heteroübergang sowie Verfahren und Vorrichtung zur Herstellung derselben |
CN114447123B (zh) * | 2020-11-02 | 2024-05-14 | 苏州阿特斯阳光电力科技有限公司 | 异质结太阳能电池及光伏组件 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2891600B2 (ja) * | 1992-12-25 | 1999-05-17 | 三洋電機株式会社 | ヘテロ接合デバイスの製造方法 |
JPH0878659A (ja) * | 1994-09-02 | 1996-03-22 | Sanyo Electric Co Ltd | 半導体デバイス及びその製造方法 |
DE10045249A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Photovoltaisches Bauelement und Verfahren zum Herstellen des Bauelements |
JP2002299658A (ja) * | 2001-03-30 | 2002-10-11 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2003282905A (ja) * | 2002-03-26 | 2003-10-03 | Sanyo Electric Co Ltd | 太陽電池及びその製造方法 |
JP4194379B2 (ja) * | 2003-01-22 | 2008-12-10 | 三洋電機株式会社 | 光起電力装置 |
JP4093892B2 (ja) * | 2003-03-25 | 2008-06-04 | 三洋電機株式会社 | 光起電力装置の製造方法 |
CN100431177C (zh) | 2003-09-24 | 2008-11-05 | 三洋电机株式会社 | 光生伏打元件及其制造方法 |
JP4169671B2 (ja) * | 2003-09-24 | 2008-10-22 | 三洋電機株式会社 | 光起電力素子の製造方法 |
EP1696492B1 (de) | 2005-02-25 | 2012-04-11 | Sanyo Electric Co., Ltd. | Photovoltaische Zelle |
JP4502845B2 (ja) * | 2005-02-25 | 2010-07-14 | 三洋電機株式会社 | 光起電力素子 |
DE102005019225B4 (de) * | 2005-04-20 | 2009-12-31 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Heterokontaktsolarzelle mit invertierter Schichtstrukturgeometrie |
JP4711851B2 (ja) * | 2006-02-24 | 2011-06-29 | 三洋電機株式会社 | 光起電力装置 |
US8637761B2 (en) * | 2008-09-16 | 2014-01-28 | Silevo, Inc. | Solar cells fabricated by using CVD epitaxial Si films on metallurgical-grade Si wafers |
KR100993511B1 (ko) * | 2008-11-19 | 2010-11-12 | 엘지전자 주식회사 | 태양 전지 및 그 제조 방법 |
CN101997040B (zh) * | 2009-08-13 | 2012-12-12 | 杜邦太阳能有限公司 | 用于制造具有带有纹理表面的透明传导氧化物层的多层结构的工艺和借此制成的结构 |
DE102010020175A1 (de) * | 2010-05-11 | 2011-11-17 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauteil mit defektreicher Schicht zur optimalen Kontaktierung von Emittern sowie Verfahren zu dessen Herstellung |
JP2012080080A (ja) * | 2010-09-07 | 2012-04-19 | Tokyo Electron Ltd | 縦型熱処理装置及びその制御方法 |
-
2012
- 2012-05-16 DE DE201210104289 patent/DE102012104289A1/de not_active Withdrawn
-
2013
- 2013-05-06 CN CN201380025565.9A patent/CN104380475B/zh active Active
- 2013-05-06 US US14/401,569 patent/US20150101659A1/en not_active Abandoned
- 2013-05-06 JP JP2015512158A patent/JP2015516692A/ja active Pending
- 2013-05-06 WO PCT/IB2013/053610 patent/WO2013171619A1/de active Application Filing
- 2013-05-06 EP EP13728840.3A patent/EP2850661B1/de active Active
- 2013-05-06 MY MYPI2014703355A patent/MY169363A/en unknown
- 2013-05-06 KR KR1020147035220A patent/KR20150013306A/ko not_active Application Discontinuation
- 2013-05-06 HU HUE13728840A patent/HUE029311T2/en unknown
- 2013-05-06 EA EA201492034A patent/EA201492034A1/ru unknown
- 2013-05-13 TW TW102116887A patent/TW201409727A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
EA201492034A1 (ru) | 2015-05-29 |
JP2015516692A (ja) | 2015-06-11 |
CN104380475B (zh) | 2017-03-08 |
US20150101659A1 (en) | 2015-04-16 |
HUE029311T2 (en) | 2017-02-28 |
EP2850661A1 (de) | 2015-03-25 |
EP2850661B1 (de) | 2016-02-17 |
KR20150013306A (ko) | 2015-02-04 |
TW201409727A (zh) | 2014-03-01 |
WO2013171619A1 (de) | 2013-11-21 |
DE102012104289A1 (de) | 2013-11-21 |
CN104380475A (zh) | 2015-02-25 |
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