MY150866A - Compositions and methods for polishing silicon nitride materials - Google Patents

Compositions and methods for polishing silicon nitride materials

Info

Publication number
MY150866A
MY150866A MYPI20084974A MY150866A MY 150866 A MY150866 A MY 150866A MY PI20084974 A MYPI20084974 A MY PI20084974A MY 150866 A MY150866 A MY 150866A
Authority
MY
Malaysia
Prior art keywords
silicon nitride
compositions
methods
nitride materials
polishing silicon
Prior art date
Application number
Other languages
English (en)
Inventor
Dysard Jeffrey
Anjur Sriram
Johns Timothy
Chen Zhan
Original Assignee
Cabot Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Microelectronics Corp filed Critical Cabot Microelectronics Corp
Publication of MY150866A publication Critical patent/MY150866A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
MYPI20084974 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials MY150866A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/448,205 US8759216B2 (en) 2006-06-07 2006-06-07 Compositions and methods for polishing silicon nitride materials

Publications (1)

Publication Number Publication Date
MY150866A true MY150866A (en) 2014-03-14

Family

ID=38832072

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20084974 MY150866A (en) 2006-06-07 2007-06-07 Compositions and methods for polishing silicon nitride materials

Country Status (10)

Country Link
US (1) US8759216B2 (https=)
EP (1) EP2035523B1 (https=)
JP (1) JP5313885B2 (https=)
KR (1) KR101268128B1 (https=)
CN (1) CN101490201B (https=)
IL (1) IL195698A (https=)
MY (1) MY150866A (https=)
SG (1) SG172674A1 (https=)
TW (1) TWI374931B (https=)
WO (1) WO2007146065A1 (https=)

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JPWO2019181487A1 (ja) 2018-03-23 2021-03-11 富士フイルム株式会社 研磨液および化学的機械的研磨方法
KR102723152B1 (ko) 2018-03-23 2024-10-29 후지필름 가부시키가이샤 연마액 및 화학적 기계적 연마 방법
JP7002635B2 (ja) 2018-03-23 2022-01-20 富士フイルム株式会社 研磨液および化学的機械的研磨方法
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CN111283556A (zh) * 2020-03-22 2020-06-16 浙江宇达新材料有限公司 一种金属材料表面处理工艺
TWI877406B (zh) 2020-09-25 2025-03-21 日商福吉米股份有限公司 化學機械研磨漿料、化學機械研磨組合物、用於研磨表面的方法、及緩衝金屬氧化物鹽的方法
JP7777017B2 (ja) * 2021-03-30 2025-11-27 株式会社フジミインコーポレーテッド 研磨用組成物、及び窒化ケイ素を選択的に除去する方法
JP2025515839A (ja) 2022-05-13 2025-05-20 インテグリス・インコーポレーテッド 窒化ケイ素エッチング組成物および方法

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Also Published As

Publication number Publication date
CN101490201A (zh) 2009-07-22
IL195698A (en) 2014-08-31
JP2009540575A (ja) 2009-11-19
US8759216B2 (en) 2014-06-24
EP2035523B1 (en) 2017-09-13
KR101268128B1 (ko) 2013-05-31
JP5313885B2 (ja) 2013-10-09
EP2035523A4 (en) 2011-12-21
TWI374931B (en) 2012-10-21
TW200804579A (en) 2008-01-16
US20070298612A1 (en) 2007-12-27
EP2035523A1 (en) 2009-03-18
CN101490201B (zh) 2013-01-16
IL195698A0 (en) 2009-09-01
SG172674A1 (en) 2011-07-28
WO2007146065A1 (en) 2007-12-21
KR20090020677A (ko) 2009-02-26

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