MY148382A - Bottom antireflective coating compositions - Google Patents

Bottom antireflective coating compositions

Info

Publication number
MY148382A
MY148382A MYPI2010001800A MYPI20101800A MY148382A MY 148382 A MY148382 A MY 148382A MY PI2010001800 A MYPI2010001800 A MY PI2010001800A MY PI20101800 A MYPI20101800 A MY PI20101800A MY 148382 A MY148382 A MY 148382A
Authority
MY
Malaysia
Prior art keywords
coating compositions
antireflective coating
bottom antireflective
compositions
developable bottom
Prior art date
Application number
MYPI2010001800A
Other languages
English (en)
Inventor
Francis M Houlihan
Miyazaki Shinji
Mark O Neisser
Alberto D Dioses
Joseph E Oberlander
Original Assignee
Az Electronic Materials Usa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials Usa filed Critical Az Electronic Materials Usa
Publication of MY148382A publication Critical patent/MY148382A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/01—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms
    • C07C211/02—Compounds containing amino groups bound to a carbon skeleton having amino groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C211/03—Monoamines
    • C07C211/05—Mono-, di- or tri-ethylamine
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C55/00—Saturated compounds having more than one carboxyl group bound to acyclic carbon atoms
    • C07C55/02—Dicarboxylic acids
    • C07C55/08—Malonic acid
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Laminated Bodies (AREA)
MYPI2010001800A 2007-10-23 2008-10-21 Bottom antireflective coating compositions MY148382A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/876,793 US8088548B2 (en) 2007-10-23 2007-10-23 Bottom antireflective coating compositions

Publications (1)

Publication Number Publication Date
MY148382A true MY148382A (en) 2013-04-15

Family

ID=40474943

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2010001800A MY148382A (en) 2007-10-23 2008-10-21 Bottom antireflective coating compositions

Country Status (8)

Country Link
US (1) US8088548B2 (enExample)
EP (1) EP2212273A2 (enExample)
JP (1) JP5499386B2 (enExample)
KR (1) KR101537833B1 (enExample)
CN (1) CN101835735A (enExample)
MY (1) MY148382A (enExample)
TW (1) TWI464537B (enExample)
WO (1) WO2009053832A2 (enExample)

Families Citing this family (93)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US9763668B2 (en) 2004-10-08 2017-09-19 Covidien Lp Endoscopic surgical clip applier
US7717926B2 (en) 2004-10-08 2010-05-18 Tyco Healthcare Group Lp Endoscopic surgical clip applier
CA2809110A1 (en) 2004-10-08 2006-04-20 Tyco Healthcare Group Lp Apparatus for applying surgical clips
US7816071B2 (en) * 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
CA2605135C (en) 2006-10-17 2014-12-30 Tyco Healthcare Group Lp Apparatus for applying surgical clips
CA2868909A1 (en) 2007-03-26 2008-10-02 Tyco Healthcare Group Lp Endoscopic surgical clip applier
US8506580B2 (en) 2007-04-11 2013-08-13 Covidien Lp Surgical clip applier
US20090098490A1 (en) * 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
KR101585992B1 (ko) * 2007-12-20 2016-01-19 삼성전자주식회사 반사방지 코팅용 고분자, 반사방지 코팅용 조성물 및 이를 이용한 반도체 장치의 패턴 형성 방법
US8465502B2 (en) 2008-08-25 2013-06-18 Covidien Lp Surgical clip applier and method of assembly
US8409223B2 (en) 2008-08-29 2013-04-02 Covidien Lp Endoscopic surgical clip applier with clip retention
US9358015B2 (en) 2008-08-29 2016-06-07 Covidien Lp Endoscopic surgical clip applier with wedge plate
US8267944B2 (en) 2008-08-29 2012-09-18 Tyco Healthcare Group Lp Endoscopic surgical clip applier with lock out
JP4813537B2 (ja) * 2008-11-07 2011-11-09 信越化学工業株式会社 熱酸発生剤を含有するレジスト下層材料、レジスト下層膜形成基板及びパターン形成方法
US8455176B2 (en) * 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
CN102395925B (zh) * 2009-02-19 2015-06-03 布鲁尔科技公司 可溶于显影剂的酸敏性底部减反射涂料
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) * 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating
JP5504824B2 (ja) * 2009-10-28 2014-05-28 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物、層間絶縁膜及びその形成方法
US8545486B2 (en) 2009-12-15 2013-10-01 Covidien Lp Surgical clip applier
JP5691585B2 (ja) * 2010-02-16 2015-04-01 住友化学株式会社 レジスト組成物
US8403945B2 (en) 2010-02-25 2013-03-26 Covidien Lp Articulating endoscopic surgical clip applier
US8403946B2 (en) 2010-07-28 2013-03-26 Covidien Lp Articulating clip applier cartridge
US8968337B2 (en) 2010-07-28 2015-03-03 Covidien Lp Articulating clip applier
JP5737526B2 (ja) * 2010-08-02 2015-06-17 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
CN103180351B (zh) * 2010-08-25 2015-06-10 陶氏环球技术有限责任公司 共聚物
JP6035017B2 (ja) * 2010-10-04 2016-11-30 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
JP5820676B2 (ja) * 2010-10-04 2015-11-24 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 下層組成物および下層を像形成する方法
US20120122029A1 (en) 2010-11-11 2012-05-17 Takanori Kudo Underlayer Developable Coating Compositions and Processes Thereof
US8507191B2 (en) 2011-01-07 2013-08-13 Micron Technology, Inc. Methods of forming a patterned, silicon-enriched developable antireflective material and semiconductor device structures including the same
JP5981196B2 (ja) * 2011-04-07 2016-08-31 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9775623B2 (en) 2011-04-29 2017-10-03 Covidien Lp Surgical clip applier including clip relief feature
JP2013014743A (ja) 2011-05-27 2013-01-24 Rohm & Haas Electronic Materials Llc 表面活性添加剤およびこれを含むフォトレジスト組成物
US8623589B2 (en) * 2011-06-06 2014-01-07 Az Electronic Materials Usa Corp. Bottom antireflective coating compositions and processes thereof
CN105153186B (zh) * 2011-06-14 2020-05-01 三菱化学株式会社 醇化合物、（甲基）丙烯酸酯、聚合物及它们的制造方法、抗蚀剂组合物及基板的制造方法
CN102890402B (zh) * 2011-07-19 2014-07-16 中芯国际集成电路制造(上海)有限公司 去除光感显影底部抗反射层缺陷的方法
US8715907B2 (en) 2011-08-10 2014-05-06 International Business Machines Corporation Developable bottom antireflective coating compositions for negative resists
JP5621755B2 (ja) * 2011-11-17 2014-11-12 信越化学工業株式会社 化学増幅ポジ型レジスト材料及びパターン形成方法
US8697336B2 (en) 2011-12-15 2014-04-15 Az Electronic Materials Usa Corp. Composition for forming a developable bottom antireflective coating
US9364239B2 (en) 2011-12-19 2016-06-14 Covidien Lp Jaw closure mechanism for a surgical clip applier
US9408610B2 (en) 2012-05-04 2016-08-09 Covidien Lp Surgical clip applier with dissector
JP6246494B2 (ja) * 2012-05-18 2017-12-13 住友化学株式会社 レジスト組成物及びレジストパターンの製造方法
US9532787B2 (en) 2012-05-31 2017-01-03 Covidien Lp Endoscopic clip applier
US8999624B2 (en) * 2012-06-29 2015-04-07 International Business Machines Corporation Developable bottom antireflective coating composition and pattern forming method using thereof
US8900797B2 (en) 2012-09-26 2014-12-02 Az Electronic Materials (Luxembourg) S.A.R.L. Developable bottom anti-reflective coating
US9750500B2 (en) 2013-01-18 2017-09-05 Covidien Lp Surgical clip applier
US9017934B2 (en) 2013-03-08 2015-04-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist defect reduction system and method
US9110376B2 (en) 2013-03-12 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9245751B2 (en) 2013-03-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-reflective layer and method
US9256128B2 (en) 2013-03-12 2016-02-09 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing semiconductor device
US9175173B2 (en) 2013-03-12 2015-11-03 Taiwan Semiconductor Manufacturing Company, Ltd. Unlocking layer and method
US8932799B2 (en) 2013-03-12 2015-01-13 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9354521B2 (en) 2013-03-12 2016-05-31 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9543147B2 (en) 2013-03-12 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of manufacture
US9502231B2 (en) 2013-03-12 2016-11-22 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist layer and method
US9117881B2 (en) 2013-03-15 2015-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Conductive line system and process
US9341945B2 (en) 2013-08-22 2016-05-17 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method of formation and use
US9775624B2 (en) 2013-08-27 2017-10-03 Covidien Lp Surgical clip applier
US10036953B2 (en) 2013-11-08 2018-07-31 Taiwan Semiconductor Manufacturing Company Photoresist system and method
US10095113B2 (en) 2013-12-06 2018-10-09 Taiwan Semiconductor Manufacturing Company Photoresist and method
KR102142648B1 (ko) * 2013-12-16 2020-08-10 삼성디스플레이 주식회사 감광성 수지 조성물, 이를 이용한 유기막 형성방법 및 유기막을 포함하는 표시장치
US9761449B2 (en) 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
TWI575566B (zh) 2014-02-24 2017-03-21 東京威力科創股份有限公司 與光敏化化學放大光阻化學品及程序一起使用的方法及技術
DE112015000546T5 (de) 2014-02-25 2016-11-10 Tokyo Electron Limited Chemische Verstärkungsverfahren und -methoden für entwickelbare untere Antireflexbeläge und gefärbte Implantationsresists
US9599896B2 (en) 2014-03-14 2017-03-21 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist system and method
US9572753B2 (en) * 2014-03-17 2017-02-21 Ada Foundation Enzymatically and hydrolytically stable resins, resin monomers, and resin composites for use in dental preventive and restorative applications
US9362120B2 (en) 2014-03-31 2016-06-07 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography process and composition with de-crosslinkable crosslink material
US9581908B2 (en) 2014-05-16 2017-02-28 Taiwan Semiconductor Manufacturing Company, Ltd. Photoresist and method
US9810990B2 (en) * 2015-03-16 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical treatment for lithography improvement in a negative tone development process
CN104914672B (zh) * 2015-06-11 2020-08-21 中国科学院化学研究所 基于含多羟基结构分子玻璃的底部抗反射组合物及其应用
US10007177B2 (en) 2015-08-21 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Method to define multiple layer patterns using double exposures
CN105334697B (zh) * 2015-12-08 2019-10-11 深圳市华星光电技术有限公司 光刻胶组合物及彩色滤光片的制作方法
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
TWI662360B (zh) 2016-05-13 2019-06-11 東京威力科創股份有限公司 藉由使用光劑之臨界尺寸控制
TWI657314B (zh) 2016-05-13 2019-04-21 東京威力科創股份有限公司 藉由使用光敏化學品或光敏化學增幅型光阻劑之臨界尺寸控制
JP6789024B2 (ja) * 2016-07-22 2020-11-25 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法、並びに、高分子化合物
KR102482878B1 (ko) 2017-09-26 2022-12-29 삼성전자 주식회사 집적회로 소자의 제조 방법
JP7200267B2 (ja) * 2019-01-28 2023-01-06 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
WO2021034567A1 (en) 2019-08-16 2021-02-25 Tokyo Electron Limited Method and process for stochastic driven defectivity healing
US11345772B2 (en) 2019-09-06 2022-05-31 Canon Kabushiki Kaisha Curable composition
TWI777426B (zh) * 2020-02-27 2022-09-11 台灣積體電路製造股份有限公司 光阻底層組成物與製造半導體裝置的方法
US12222650B2 (en) 2020-02-27 2025-02-11 Taiwan Semiconductor Manufacuring Company, Ltd. Photoresist underlayer and method of manufacturing a semiconductor device
US20210271164A1 (en) * 2020-02-27 2021-09-02 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of manufacturing a semiconductor device
US20220137509A1 (en) * 2020-10-31 2022-05-05 Rohm And Haas Electronic Materials Llc Photoresist compositions and pattern formation methods
KR20220080588A (ko) * 2020-12-07 2022-06-14 삼성전자주식회사 집적회로 소자의 제조 방법
JP7673652B2 (ja) * 2021-02-17 2025-05-09 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP7673653B2 (ja) * 2021-02-17 2025-05-09 信越化学工業株式会社 ネガ型レジスト材料及びパターン形成方法
US20240369924A1 (en) * 2021-07-30 2024-11-07 Mitsubishi Gas Chemical Company, Inc. Resist composition and resist film forming method using same
CN113913075B (zh) * 2021-10-25 2022-09-20 嘉庚创新实验室 一种抗反射涂层组合物及可交联聚合物
JP2024047257A (ja) * 2022-09-26 2024-04-05 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法、基板処理装置及び基板処理液
CN119978922A (zh) * 2025-03-05 2025-05-13 珠海基石科技有限公司 抗反射组合物、抗反射膜、图案化方法、图案化基底、半导体器件及其制备方法

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1086279A (en) 1964-12-25 1967-10-04 Fuji Photo Film Co Ltd Heat developable photographic copying material
NL169879C (nl) * 1971-01-08 1982-09-01 Polak Frutal Works Werkwijze voor de bereiding van smaakgevende of smaakverbeterende zwavelverbindingen, alsmede werkwijze voor de bereiding van een aromacompositie en werkwijze voor het aromatiseren van een voedingsmiddel.
US4061465A (en) 1976-04-02 1977-12-06 The United States Of America As Represented By The Secretary Of Agriculture Creasable durable press textiles from methylol reagents and half amides or half salts of dicarboxylic acids
US4229274A (en) 1979-02-26 1980-10-21 Ppg Industries, Inc. Ultraviolet light curable compositions for producing coatings of low gloss
US4197174A (en) * 1979-03-14 1980-04-08 American Can Company Method for producing bis-[4-(diphenylsulfonio) phenyl] sulfide bis-MX6
JPS5647440A (en) 1979-09-28 1981-04-30 Japan Synthetic Rubber Co Ltd Rubber composition having high elastic modulus
US4388450A (en) 1981-03-13 1983-06-14 General Electric Company Aromatic polyvinyl ethers and heat curable molding compositions obtained therefrom
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US4910122A (en) 1982-09-30 1990-03-20 Brewer Science, Inc. Anti-reflective coating
US4863827A (en) 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
US4845265A (en) 1988-02-29 1989-07-04 Allied-Signal Inc. Polyfunctional vinyl ether terminated ester oligomers
DE3817012A1 (de) 1988-05-19 1989-11-30 Basf Ag Positiv und negativ arbeitende strahlungsempfindliche gemische sowie verfahren zur herstellung von reliefmustern
DE3930087A1 (de) 1989-09-09 1991-03-14 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
DE3930086A1 (de) 1989-09-09 1991-03-21 Hoechst Ag Positiv arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
US5650261A (en) 1989-10-27 1997-07-22 Rohm And Haas Company Positive acting photoresist comprising a photoacid, a photobase and a film forming acid-hardening resin system
US5114826A (en) 1989-12-28 1992-05-19 Ibm Corporation Photosensitive polyimide compositions
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
JPH03267941A (ja) * 1990-03-19 1991-11-28 Sanyo Chem Ind Ltd 導電性レジスト材料
KR100189642B1 (ko) * 1991-02-18 1999-06-01 디어터 크리스트 전자 부품 및 조립체를 피복시키거나 접착시키는 방법
JPH04269756A (ja) * 1991-02-25 1992-09-25 Nippon Telegr & Teleph Corp <Ntt> リフトオフ加工に適したレジスト膜
DE4112967A1 (de) 1991-04-20 1992-10-22 Hoechst Ag Substituierte 1-sulfonyloxy-2-pyridone, verfahren zu ihrer herstellung und ihre verwendung
DE4125260A1 (de) 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
JP3000745B2 (ja) 1991-09-19 2000-01-17 富士通株式会社 レジスト組成物とレジストパターンの形成方法
JP2694097B2 (ja) 1992-03-03 1997-12-24 インターナショナル・ビジネス・マシーンズ・コーポレイション 反射防止コーティング組成物
US5362608A (en) 1992-08-24 1994-11-08 Brewer Science, Inc. Microlithographic substrate cleaning and compositions therefor
DE4302681A1 (de) 1993-02-01 1994-08-04 Hoechst Ag Sulfonsäureester, damit hergestellte strahlungsempfindliche Gemische und deren Verwendung
JPH06230574A (ja) 1993-02-05 1994-08-19 Fuji Photo Film Co Ltd ポジ型感光性組成物
DE4446511A1 (de) * 1994-12-24 1996-06-27 Sel Alcatel Ag Synchrones digitales Nachrichtenübertragungssystem mit hierarchischem Synchronisierungsnetz
US5635333A (en) 1994-12-28 1997-06-03 Shipley Company, L.L.C. Antireflective coating process
US5731386A (en) 1995-05-09 1998-03-24 Shipley Company, L.L.C. Polymer for positive acid catalyzed resists
JPH0954437A (ja) 1995-06-05 1997-02-25 Fuji Photo Film Co Ltd 化学増幅型ポジレジスト組成物
TW477913B (en) 1995-11-02 2002-03-01 Shinetsu Chemical Co Sulfonium salts and chemically amplified positive resist compositions
CN1198181C (zh) 1996-03-07 2005-04-20 住友电木株式会社 包括具有酸不稳定侧基的多环聚合物的光刻胶组合物
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
JP3587325B2 (ja) 1996-03-08 2004-11-10 富士写真フイルム株式会社 ポジ型感光性組成物
JP3198915B2 (ja) 1996-04-02 2001-08-13 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US5886102A (en) 1996-06-11 1999-03-23 Shipley Company, L.L.C. Antireflective coating compositions
US5652297A (en) 1996-08-16 1997-07-29 Hoechst Celanese Corporation Aqueous antireflective coatings for photoresist compositions
CA2243381A1 (en) 1996-11-20 1998-05-28 Polaroid Corporation Protective overcoat useful for enhancing an article's resistance to ambient humidity
KR100265597B1 (ko) 1996-12-30 2000-09-15 김영환 Arf 감광막 수지 및 그 제조방법
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
TW432257B (en) 1997-01-31 2001-05-01 Shinetsu Chemical Co High molecular weight silicone compound, chemically amplified positive resist composition and patterning method
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US6103445A (en) 1997-03-07 2000-08-15 Board Of Regents, The University Of Texas System Photoresist compositions comprising norbornene derivative polymers with acid labile groups
US5981145A (en) 1997-04-30 1999-11-09 Clariant Finance (Bvi) Limited Light absorbing polymers
US6054254A (en) 1997-07-03 2000-04-25 Kabushiki Kaisha Toshiba Composition for underlying film and method of forming a pattern using the film
JPH1172925A (ja) * 1997-07-03 1999-03-16 Toshiba Corp 下層膜用組成物およびこれを用いたパターン形成方法
TW468091B (en) 1997-09-05 2001-12-11 Kansai Paint Co Ltd Visible light-sensitive compositions and pattern formation process
DE19742013A1 (de) 1997-09-24 1999-03-25 Basf Ag Offenzellige Hartschaumstoffe auf Isocyanatbasis
JP3676918B2 (ja) 1997-10-09 2005-07-27 富士通株式会社 レジスト材料及びレジストパターンの形成方法
US5882996A (en) 1997-10-14 1999-03-16 Industrial Technology Research Institute Method of self-aligned dual damascene patterning using developer soluble arc interstitial layer
US5935760A (en) 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
KR100279497B1 (ko) 1998-07-16 2001-02-01 박찬구 술포늄 염의 제조방법
TWI250379B (en) 1998-08-07 2006-03-01 Az Electronic Materials Japan Chemical amplified radiation-sensitive composition which contains onium salt and generator
US6630285B2 (en) 1998-10-15 2003-10-07 Mitsui Chemicals, Inc. Positive sensitive resin composition and a process for forming a resist pattern therewith
US6114085A (en) 1998-11-18 2000-09-05 Clariant Finance (Bvi) Limited Antireflective composition for a deep ultraviolet photoresist
US6251562B1 (en) 1998-12-23 2001-06-26 International Business Machines Corporation Antireflective polymer and method of use
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
KR100320773B1 (ko) 1999-05-31 2002-01-17 윤종용 포토레지스트 조성물
US6455230B1 (en) 1999-06-04 2002-09-24 Agfa-Gevaert Method for preparing a lithographic printing plate by ablation of a heat sensitive ablatable imaging element
US6110653A (en) 1999-07-26 2000-08-29 International Business Machines Corporation Acid sensitive ARC and method of use
US6187506B1 (en) 1999-08-05 2001-02-13 Clariant Finance (Bvi) Limited Antireflective coating for photoresist compositions
US6338934B1 (en) 1999-08-26 2002-01-15 International Business Machines Corporation Hybrid resist based on photo acid/photo base blending
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
JP3948646B2 (ja) 2000-08-31 2007-07-25 東京応化工業株式会社 ポジ型レジスト組成物及びそれを用いたレジストパターン形成方法
US7192931B2 (en) * 2000-10-12 2007-03-20 Neuren Pharmaceuticals Ltd. Treatment of demyelinating diseases
TW576859B (en) 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
EP1262832A1 (en) 2001-05-31 2002-12-04 ASML Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
US20030093513A1 (en) * 2001-09-11 2003-05-15 Hicks Jeffrey Todd Methods, systems and computer program products for packetized voice network evaluation
KR100465866B1 (ko) 2001-10-26 2005-01-13 주식회사 하이닉스반도체 유기반사방지막 조성물 및 그의 제조방법
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7070914B2 (en) * 2002-01-09 2006-07-04 Az Electronic Materials Usa Corp. Process for producing an image using a first minimum bottom antireflective coating composition
US6844131B2 (en) 2002-01-09 2005-01-18 Clariant Finance (Bvi) Limited Positive-working photoimageable bottom antireflective coating
US20030215736A1 (en) 2002-01-09 2003-11-20 Oberlander Joseph E. Negative-working photoimageable bottom antireflective coating
US6846612B2 (en) 2002-02-01 2005-01-25 Brewer Science Inc. Organic anti-reflective coating compositions for advanced microlithography
KR20030068729A (ko) 2002-02-16 2003-08-25 삼성전자주식회사 반사 방지용 광흡수막 형성 조성물 및 이를 이용한 반도체소자의 패턴 형성 방법
US7265431B2 (en) 2002-05-17 2007-09-04 Intel Corporation Imageable bottom anti-reflective coating for high resolution lithography
KR20040009384A (ko) 2002-07-23 2004-01-31 삼성전자주식회사 포토레지스트용 현상액에 용해되는 유기 바닥 반사 방지조성물과 이를 이용한 사진 식각 공정
CN100371826C (zh) 2002-08-26 2008-02-27 住友化学工业株式会社 磺酸盐和光刻胶组合物
US7358408B2 (en) 2003-05-16 2008-04-15 Az Electronic Materials Usa Corp. Photoactive compounds
US7223518B2 (en) 2003-06-06 2007-05-29 Georgia Tech Research Corporation Compositions and methods of use thereof
US7186486B2 (en) 2003-08-04 2007-03-06 Micronic Laser Systems Ab Method to pattern a substrate
TWI366067B (en) * 2003-09-10 2012-06-11 Fujifilm Corp Photosensitive composition and pattern forming method using the same
JP4474246B2 (ja) * 2003-09-19 2010-06-02 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
DE102004014292A1 (de) 2004-03-22 2005-10-20 Lurgi Ag Koproduktion von Methanol und Ammoniak aus Erdgas
US20050214674A1 (en) 2004-03-25 2005-09-29 Yu Sui Positive-working photoimageable bottom antireflective coating
US20050255410A1 (en) 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
KR101168249B1 (ko) 2004-05-14 2012-07-30 닛산 가가쿠 고교 가부시키 가이샤 비닐에테르 화합물을 포함하는 반사방지막 형성 조성물
US20050271974A1 (en) 2004-06-08 2005-12-08 Rahman M D Photoactive compounds
JP4491283B2 (ja) 2004-06-10 2010-06-30 信越化学工業株式会社 反射防止膜形成用組成物を用いたパターン形成方法
US7119031B2 (en) 2004-06-28 2006-10-10 Micron Technology, Inc. Methods of forming patterned photoresist layers over semiconductor substrates
CN101040221B (zh) * 2004-10-14 2010-06-16 日产化学工业株式会社 含有芳香族磺酸酯化合物和光酸发生剂的形成下层防反射膜的组合物
US7816071B2 (en) 2005-02-10 2010-10-19 Az Electronic Materials Usa Corp. Process of imaging a photoresist with multiple antireflective coatings
US7521170B2 (en) 2005-07-12 2009-04-21 Az Electronic Materials Usa Corp. Photoactive compounds
US8383322B2 (en) 2005-08-05 2013-02-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography watermark reduction
US7678528B2 (en) 2005-11-16 2010-03-16 Az Electronic Materials Usa Corp. Photoactive compounds
KR100703007B1 (ko) 2005-11-17 2007-04-06 삼성전자주식회사 감광성 유기 반사 방지막 형성용 조성물 및 이를 이용한패턴 형성 방법
JP5100115B2 (ja) 2006-03-16 2012-12-19 東洋合成工業株式会社 スルホニウム塩及び酸発生剤
JP4548616B2 (ja) * 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
US7816069B2 (en) 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US20090098490A1 (en) 2007-10-16 2009-04-16 Victor Pham Radiation-Sensitive, Wet Developable Bottom Antireflective Coating Compositions and Their Applications in Semiconductor Manufacturing
US8455176B2 (en) 2008-11-12 2013-06-04 Az Electronic Materials Usa Corp. Coating composition
US8632948B2 (en) 2009-09-30 2014-01-21 Az Electronic Materials Usa Corp. Positive-working photoimageable bottom antireflective coating
US20110086312A1 (en) 2009-10-09 2011-04-14 Dammel Ralph R Positive-Working Photoimageable Bottom Antireflective Coating

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US20090104559A1 (en) 2009-04-23
EP2212273A2 (en) 2010-08-04
WO2009053832A3 (en) 2009-11-26
US8088548B2 (en) 2012-01-03
JP2011502276A (ja) 2011-01-20
TWI464537B (zh) 2014-12-11
CN101835735A (zh) 2010-09-15
KR20100090270A (ko) 2010-08-13

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