MY145421A - Antireflective composition for photoresists - Google Patents
Antireflective composition for photoresistsInfo
- Publication number
- MY145421A MY145421A MYPI20090489A MYPI20090489A MY145421A MY 145421 A MY145421 A MY 145421A MY PI20090489 A MYPI20090489 A MY PI20090489A MY PI20090489 A MYPI20090489 A MY PI20090489A MY 145421 A MY145421 A MY 145421A
- Authority
- MY
- Malaysia
- Prior art keywords
- photoresists
- hydrocarbyl
- linking moiety
- antireflective composition
- coating composition
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 3
- 229920002120 photoresistant polymer Polymers 0.000 title abstract 2
- 230000003667 anti-reflective effect Effects 0.000 title 1
- 239000006117 anti-reflective coating Substances 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical class [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 239000002253 acid Substances 0.000 abstract 1
- 239000003431 cross linking reagent Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000003384 imaging method Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/942—Masking
- Y10S438/948—Radiation resist
- Y10S438/952—Utilizing antireflective layer
Landscapes
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Paints Or Removers (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Polyesters Or Polycarbonates (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/502,706 US7638262B2 (en) | 2006-08-10 | 2006-08-10 | Antireflective composition for photoresists |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY145421A true MY145421A (en) | 2012-02-15 |
Family
ID=38740457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20090489A MY145421A (en) | 2006-08-10 | 2007-08-07 | Antireflective composition for photoresists |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7638262B2 (enExample) |
| EP (1) | EP2052293B1 (enExample) |
| JP (1) | JP5453615B2 (enExample) |
| KR (1) | KR101441705B1 (enExample) |
| CN (1) | CN101501572A (enExample) |
| MY (1) | MY145421A (enExample) |
| TW (1) | TWI417668B (enExample) |
| WO (1) | WO2008017954A2 (enExample) |
Families Citing this family (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7824844B2 (en) * | 2007-01-19 | 2010-11-02 | Az Electronic Materials Usa Corp. | Solvent mixtures for antireflective coating compositions for photoresists |
| US20080286689A1 (en) * | 2007-05-14 | 2008-11-20 | Hong Zhuang | Antireflective Coating Compositions |
| US20090035704A1 (en) * | 2007-08-03 | 2009-02-05 | Hong Zhuang | Underlayer Coating Composition Based on a Crosslinkable Polymer |
| US8039201B2 (en) * | 2007-11-21 | 2011-10-18 | Az Electronic Materials Usa Corp. | Antireflective coating composition and process thereof |
| US8435721B2 (en) * | 2008-02-21 | 2013-05-07 | Nissan Chemical Industries, Ltd. | Resist underlayer film forming composition and forming method of resist pattern using the same |
| US8329387B2 (en) | 2008-07-08 | 2012-12-11 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| US8221965B2 (en) * | 2008-07-08 | 2012-07-17 | Az Electronic Materials Usa Corp. | Antireflective coating compositions |
| KR100997502B1 (ko) * | 2008-08-26 | 2010-11-30 | 금호석유화학 주식회사 | 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법 |
| US20100092894A1 (en) * | 2008-10-14 | 2010-04-15 | Weihong Liu | Bottom Antireflective Coating Compositions |
| US8551686B2 (en) * | 2009-10-30 | 2013-10-08 | Az Electronic Materials Usa Corp. | Antireflective composition for photoresists |
| US8507192B2 (en) | 2010-02-18 | 2013-08-13 | Az Electronic Materials Usa Corp. | Antireflective compositions and methods of using same |
| US8465902B2 (en) | 2011-02-08 | 2013-06-18 | Az Electronic Materials Usa Corp. | Underlayer coating composition and processes thereof |
| KR102115442B1 (ko) | 2012-04-23 | 2020-05-28 | 브레우어 사이언스 인코포레이션 | 감광성의 현상제-가용성 하부 반사-방지 코팅 재료 |
| US9170494B2 (en) | 2012-06-19 | 2015-10-27 | Az Electronic Materials (Luxembourg) S.A.R.L. | Antireflective compositions and methods of using same |
| KR102011446B1 (ko) | 2013-02-26 | 2019-10-14 | 삼성전자주식회사 | 반도체 소자의 박막 패턴 형성 방법 |
| KR101982103B1 (ko) | 2015-08-31 | 2019-05-27 | 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 | 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물 |
| WO2017130896A1 (ja) | 2016-01-26 | 2017-08-03 | 株式会社Adeka | 熱酸発生剤およびこれを用いたレジスト組成物 |
| KR102487404B1 (ko) * | 2017-07-26 | 2023-01-12 | 에스케이이노베이션 주식회사 | 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물 |
| KR102288386B1 (ko) | 2018-09-06 | 2021-08-10 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법 |
| DE102020131427B4 (de) * | 2020-05-21 | 2024-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresistzusammensetzung und Herstellungsverfahren von Photoresiststruktur |
| KR102675074B1 (ko) * | 2020-11-20 | 2024-06-12 | 삼성에스디아이 주식회사 | 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법 |
| CN116814119A (zh) * | 2023-07-03 | 2023-09-29 | 长鑫存储技术有限公司 | 底部抗反射涂层组合物、图案形成方法 |
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| US452192A (en) * | 1891-05-12 | Magazine-gun | ||
| US3474058A (en) | 1966-01-19 | 1969-10-21 | Nat Distillers Chem Corp | Compositions comprising ethylene-vinyl acetate copolymer,fatty acid salt and fatty acid amide |
| US4200729A (en) | 1978-05-22 | 1980-04-29 | King Industries, Inc | Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4251665A (en) | 1978-05-22 | 1981-02-17 | King Industries, Inc. | Aromatic sulfonic acid oxa-azacyclopentane adducts |
| US4491628A (en) | 1982-08-23 | 1985-01-01 | International Business Machines Corporation | Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone |
| JP2547607B2 (ja) * | 1988-04-06 | 1996-10-23 | 富士写真フイルム株式会社 | 感光性組成物 |
| DE69125634T2 (de) | 1990-01-30 | 1998-01-02 | Wako Pure Chem Ind Ltd | Chemisch verstärktes Photolack-Material |
| US5187019A (en) | 1991-09-06 | 1993-02-16 | King Industries, Inc. | Latent catalysts |
| US5843624A (en) | 1996-03-08 | 1998-12-01 | Lucent Technologies Inc. | Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material |
| US6808859B1 (en) | 1996-12-31 | 2004-10-26 | Hyundai Electronics Industries Co., Ltd. | ArF photoresist copolymers |
| US5935760A (en) * | 1997-10-20 | 1999-08-10 | Brewer Science Inc. | Thermosetting polyester anti-reflective coatings for multilayer photoresist processes |
| US6849377B2 (en) | 1998-09-23 | 2005-02-01 | E. I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
| US6790587B1 (en) | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
| WO2001098834A1 (en) | 2000-06-21 | 2001-12-27 | Asahi Glass Company, Limited | Resist composition |
| US6447980B1 (en) | 2000-07-19 | 2002-09-10 | Clariant Finance (Bvi) Limited | Photoresist composition for deep UV and process thereof |
| KR100776551B1 (ko) | 2001-02-09 | 2007-11-16 | 아사히 가라스 가부시키가이샤 | 레지스트 조성물 |
| US6723488B2 (en) | 2001-11-07 | 2004-04-20 | Clariant Finance (Bvi) Ltd | Photoresist composition for deep UV radiation containing an additive |
| US7264913B2 (en) | 2002-11-21 | 2007-09-04 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
| TW200533692A (en) * | 2003-11-06 | 2005-10-16 | Showa Denko Kk | Curable polyester having an oxetanyl group at end and process for preparing the same, resist composition, jet printing ink composition, curing methods and uses thereof |
| US7081511B2 (en) | 2004-04-05 | 2006-07-25 | Az Electronic Materials Usa Corp. | Process for making polyesters |
| US7691556B2 (en) * | 2004-09-15 | 2010-04-06 | Az Electronic Materials Usa Corp. | Antireflective compositions for photoresists |
-
2006
- 2006-08-10 US US11/502,706 patent/US7638262B2/en active Active
-
2007
- 2007-07-12 TW TW096125444A patent/TWI417668B/zh active
- 2007-08-07 MY MYPI20090489A patent/MY145421A/en unknown
- 2007-08-07 JP JP2009523369A patent/JP5453615B2/ja active Active
- 2007-08-07 WO PCT/IB2007/002340 patent/WO2008017954A2/en not_active Ceased
- 2007-08-07 KR KR1020097003758A patent/KR101441705B1/ko active Active
- 2007-08-07 CN CNA2007800297425A patent/CN101501572A/zh active Pending
- 2007-08-07 EP EP07789633A patent/EP2052293B1/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| KR101441705B1 (ko) | 2014-09-18 |
| CN101501572A (zh) | 2009-08-05 |
| US20080038659A1 (en) | 2008-02-14 |
| EP2052293B1 (en) | 2013-03-13 |
| TWI417668B (zh) | 2013-12-01 |
| JP5453615B2 (ja) | 2014-03-26 |
| KR20090038020A (ko) | 2009-04-17 |
| WO2008017954A3 (en) | 2008-04-10 |
| EP2052293A2 (en) | 2009-04-29 |
| WO2008017954A2 (en) | 2008-02-14 |
| TW200811602A (en) | 2008-03-01 |
| JP2010500607A (ja) | 2010-01-07 |
| US7638262B2 (en) | 2009-12-29 |
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