CN101501572A - 用于光刻胶的抗反射组合物 - Google Patents

用于光刻胶的抗反射组合物 Download PDF

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Publication number
CN101501572A
CN101501572A CNA2007800297425A CN200780029742A CN101501572A CN 101501572 A CN101501572 A CN 101501572A CN A2007800297425 A CNA2007800297425 A CN A2007800297425A CN 200780029742 A CN200780029742 A CN 200780029742A CN 101501572 A CN101501572 A CN 101501572A
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CN
China
Prior art keywords
substituted
polymer
composition
unsubstituted
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA2007800297425A
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English (en)
Chinese (zh)
Inventor
吴恒鹏
向中
庄弘
单鉴会
殷建
姚晖蓉
卢炳宏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EMD Performance Materials Corp
Original Assignee
AZ Electronic Materials USA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials USA Corp filed Critical AZ Electronic Materials USA Corp
Publication of CN101501572A publication Critical patent/CN101501572A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
CNA2007800297425A 2006-08-10 2007-08-07 用于光刻胶的抗反射组合物 Pending CN101501572A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/502,706 US7638262B2 (en) 2006-08-10 2006-08-10 Antireflective composition for photoresists
US11/502,706 2006-08-10

Publications (1)

Publication Number Publication Date
CN101501572A true CN101501572A (zh) 2009-08-05

Family

ID=38740457

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800297425A Pending CN101501572A (zh) 2006-08-10 2007-08-07 用于光刻胶的抗反射组合物

Country Status (8)

Country Link
US (1) US7638262B2 (enExample)
EP (1) EP2052293B1 (enExample)
JP (1) JP5453615B2 (enExample)
KR (1) KR101441705B1 (enExample)
CN (1) CN101501572A (enExample)
MY (1) MY145421A (enExample)
TW (1) TWI417668B (enExample)
WO (1) WO2008017954A2 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102575127A (zh) * 2009-10-30 2012-07-11 Az电子材料美国公司 抗反射光致抗蚀剂组合物
CN110998446A (zh) * 2017-07-26 2020-04-10 Sk新技术株式会社 底部抗反射涂层形成用聚合物和包含其的底部抗反射涂层形成用组合物
CN116814119A (zh) * 2023-07-03 2023-09-29 长鑫存储技术有限公司 底部抗反射涂层组合物、图案形成方法

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US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
JP5267819B2 (ja) * 2008-02-21 2013-08-21 日産化学工業株式会社 レジスト下層膜形成組成物及びそれを用いたレジストパターンの形成方法
US8329387B2 (en) * 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
WO2013163100A1 (en) 2012-04-23 2013-10-31 Brewer Science Inc. Photosensitive, developer-soluble bottom anti-reflective coating material
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
KR102011446B1 (ko) 2013-02-26 2019-10-14 삼성전자주식회사 반도체 소자의 박막 패턴 형성 방법
CN115058175A (zh) 2015-08-31 2022-09-16 罗门哈斯电子材料有限责任公司 与外涂布光致抗蚀剂一起使用的涂料组合物
JP6890552B2 (ja) 2016-01-26 2021-06-18 株式会社Adeka 熱酸発生剤およびこれを用いたレジスト組成物
KR102288386B1 (ko) * 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
DE102020131427B4 (de) * 2020-05-21 2024-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresistzusammensetzung und Herstellungsverfahren von Photoresiststruktur
KR102675074B1 (ko) * 2020-11-20 2024-06-12 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP2547607B2 (ja) * 1988-04-06 1996-10-23 富士写真フイルム株式会社 感光性組成物
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US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
EP1302813A4 (en) 2000-06-21 2005-02-23 Asahi Glass Co Ltd RESIST COMPOSITION
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
EP1365290B1 (en) 2001-02-09 2007-11-21 Asahi Glass Company Ltd. Resist composition
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7264913B2 (en) * 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
TW200533692A (en) * 2003-11-06 2005-10-16 Showa Denko Kk Curable polyester having an oxetanyl group at end and process for preparing the same, resist composition, jet printing ink composition, curing methods and uses thereof
US7081511B2 (en) * 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102575127A (zh) * 2009-10-30 2012-07-11 Az电子材料美国公司 抗反射光致抗蚀剂组合物
CN102575127B (zh) * 2009-10-30 2014-08-13 Az电子材料美国公司 抗反射光致抗蚀剂组合物
CN110998446A (zh) * 2017-07-26 2020-04-10 Sk新技术株式会社 底部抗反射涂层形成用聚合物和包含其的底部抗反射涂层形成用组合物
CN110998446B (zh) * 2017-07-26 2023-04-07 Sk新技术株式会社 底部抗反射涂层形成用聚合物和包含其的底部抗反射涂层形成用组合物
CN116814119A (zh) * 2023-07-03 2023-09-29 长鑫存储技术有限公司 底部抗反射涂层组合物、图案形成方法

Also Published As

Publication number Publication date
JP5453615B2 (ja) 2014-03-26
US7638262B2 (en) 2009-12-29
WO2008017954A3 (en) 2008-04-10
MY145421A (en) 2012-02-15
WO2008017954A2 (en) 2008-02-14
TW200811602A (en) 2008-03-01
EP2052293B1 (en) 2013-03-13
JP2010500607A (ja) 2010-01-07
TWI417668B (zh) 2013-12-01
EP2052293A2 (en) 2009-04-29
KR101441705B1 (ko) 2014-09-18
KR20090038020A (ko) 2009-04-17
US20080038659A1 (en) 2008-02-14

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Open date: 20090805