KR101441705B1 - 포토레지스트용 반사 방지 조성물 - Google Patents

포토레지스트용 반사 방지 조성물 Download PDF

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Publication number
KR101441705B1
KR101441705B1 KR1020097003758A KR20097003758A KR101441705B1 KR 101441705 B1 KR101441705 B1 KR 101441705B1 KR 1020097003758 A KR1020097003758 A KR 1020097003758A KR 20097003758 A KR20097003758 A KR 20097003758A KR 101441705 B1 KR101441705 B1 KR 101441705B1
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South Korea
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polymer
propylene
group
composition
aliphatic
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Korean (ko)
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KR20090038020A (ko
Inventor
헹펭 유
종 지앙
홍 쯔앙
지안후이 샨
지안 음
후이롱 야오
핑-흥 루
Original Assignee
에이제토 엘렉토로닉 마티리알즈 아이피 (재팬) 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer

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  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
KR1020097003758A 2006-08-10 2007-08-07 포토레지스트용 반사 방지 조성물 Active KR101441705B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/502,706 US7638262B2 (en) 2006-08-10 2006-08-10 Antireflective composition for photoresists
US11/502,706 2006-08-10
PCT/IB2007/002340 WO2008017954A2 (en) 2006-08-10 2007-08-07 Antireflective composition for photoresists

Publications (2)

Publication Number Publication Date
KR20090038020A KR20090038020A (ko) 2009-04-17
KR101441705B1 true KR101441705B1 (ko) 2014-09-18

Family

ID=38740457

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097003758A Active KR101441705B1 (ko) 2006-08-10 2007-08-07 포토레지스트용 반사 방지 조성물

Country Status (8)

Country Link
US (1) US7638262B2 (enExample)
EP (1) EP2052293B1 (enExample)
JP (1) JP5453615B2 (enExample)
KR (1) KR101441705B1 (enExample)
CN (1) CN101501572A (enExample)
MY (1) MY145421A (enExample)
TW (1) TWI417668B (enExample)
WO (1) WO2008017954A2 (enExample)

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US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8435721B2 (en) * 2008-02-21 2013-05-07 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition and forming method of resist pattern using the same
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8551686B2 (en) * 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
KR102115442B1 (ko) 2012-04-23 2020-05-28 브레우어 사이언스 인코포레이션 감광성의 현상제-가용성 하부 반사-방지 코팅 재료
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
KR102011446B1 (ko) 2013-02-26 2019-10-14 삼성전자주식회사 반도체 소자의 박막 패턴 형성 방법
KR101982103B1 (ko) 2015-08-31 2019-05-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
WO2017130896A1 (ja) 2016-01-26 2017-08-03 株式会社Adeka 熱酸発生剤およびこれを用いたレジスト組成物
KR102487404B1 (ko) * 2017-07-26 2023-01-12 에스케이이노베이션 주식회사 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물
KR102288386B1 (ko) 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
DE102020131427B4 (de) * 2020-05-21 2024-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresistzusammensetzung und Herstellungsverfahren von Photoresiststruktur
KR102675074B1 (ko) * 2020-11-20 2024-06-12 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
CN116814119A (zh) * 2023-07-03 2023-09-29 长鑫存储技术有限公司 底部抗反射涂层组合物、图案形成方法

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Also Published As

Publication number Publication date
CN101501572A (zh) 2009-08-05
US20080038659A1 (en) 2008-02-14
EP2052293B1 (en) 2013-03-13
TWI417668B (zh) 2013-12-01
MY145421A (en) 2012-02-15
JP5453615B2 (ja) 2014-03-26
KR20090038020A (ko) 2009-04-17
WO2008017954A3 (en) 2008-04-10
EP2052293A2 (en) 2009-04-29
WO2008017954A2 (en) 2008-02-14
TW200811602A (en) 2008-03-01
JP2010500607A (ja) 2010-01-07
US7638262B2 (en) 2009-12-29

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