JP5453615B2 - フォトレジスト用反射防止膜組成物 - Google Patents

フォトレジスト用反射防止膜組成物 Download PDF

Info

Publication number
JP5453615B2
JP5453615B2 JP2009523369A JP2009523369A JP5453615B2 JP 5453615 B2 JP5453615 B2 JP 5453615B2 JP 2009523369 A JP2009523369 A JP 2009523369A JP 2009523369 A JP2009523369 A JP 2009523369A JP 5453615 B2 JP5453615 B2 JP 5453615B2
Authority
JP
Japan
Prior art keywords
polymer
photoresist
substituted
propylene
composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2009523369A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010500607A5 (enExample
JP2010500607A (ja
Inventor
ウー・ヘンペン
シャン・ツォン
ツァン・ホン
シャン・ジャンフイ
ユィン・ジャン
ヤオ・フイロン
ルー・ピン−フン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck Performance Materials IP Japan GK
Original Assignee
AZ Electronic Materials IP Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials IP Japan Co Ltd filed Critical AZ Electronic Materials IP Japan Co Ltd
Publication of JP2010500607A publication Critical patent/JP2010500607A/ja
Publication of JP2010500607A5 publication Critical patent/JP2010500607A5/ja
Application granted granted Critical
Publication of JP5453615B2 publication Critical patent/JP5453615B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/09Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/942Masking
    • Y10S438/948Radiation resist
    • Y10S438/952Utilizing antireflective layer

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Polyesters Or Polycarbonates (AREA)
JP2009523369A 2006-08-10 2007-08-07 フォトレジスト用反射防止膜組成物 Active JP5453615B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/502,706 US7638262B2 (en) 2006-08-10 2006-08-10 Antireflective composition for photoresists
US11/502,706 2006-08-10
PCT/IB2007/002340 WO2008017954A2 (en) 2006-08-10 2007-08-07 Antireflective composition for photoresists

Publications (3)

Publication Number Publication Date
JP2010500607A JP2010500607A (ja) 2010-01-07
JP2010500607A5 JP2010500607A5 (enExample) 2011-09-29
JP5453615B2 true JP5453615B2 (ja) 2014-03-26

Family

ID=38740457

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009523369A Active JP5453615B2 (ja) 2006-08-10 2007-08-07 フォトレジスト用反射防止膜組成物

Country Status (8)

Country Link
US (1) US7638262B2 (enExample)
EP (1) EP2052293B1 (enExample)
JP (1) JP5453615B2 (enExample)
KR (1) KR101441705B1 (enExample)
CN (1) CN101501572A (enExample)
MY (1) MY145421A (enExample)
TW (1) TWI417668B (enExample)
WO (1) WO2008017954A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11307495B2 (en) 2016-01-26 2022-04-19 Adeka Corporation Thermal acid generator and resist composition using same

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7824844B2 (en) * 2007-01-19 2010-11-02 Az Electronic Materials Usa Corp. Solvent mixtures for antireflective coating compositions for photoresists
US20080286689A1 (en) * 2007-05-14 2008-11-20 Hong Zhuang Antireflective Coating Compositions
US20090035704A1 (en) * 2007-08-03 2009-02-05 Hong Zhuang Underlayer Coating Composition Based on a Crosslinkable Polymer
US8039201B2 (en) * 2007-11-21 2011-10-18 Az Electronic Materials Usa Corp. Antireflective coating composition and process thereof
US8435721B2 (en) * 2008-02-21 2013-05-07 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition and forming method of resist pattern using the same
US8329387B2 (en) 2008-07-08 2012-12-11 Az Electronic Materials Usa Corp. Antireflective coating compositions
US8221965B2 (en) * 2008-07-08 2012-07-17 Az Electronic Materials Usa Corp. Antireflective coating compositions
KR100997502B1 (ko) * 2008-08-26 2010-11-30 금호석유화학 주식회사 개환된 프탈릭 언하이드라이드를 포함하는 유기 반사 방지막 조성물과 이의 제조방법
US20100092894A1 (en) * 2008-10-14 2010-04-15 Weihong Liu Bottom Antireflective Coating Compositions
US8551686B2 (en) * 2009-10-30 2013-10-08 Az Electronic Materials Usa Corp. Antireflective composition for photoresists
US8507192B2 (en) 2010-02-18 2013-08-13 Az Electronic Materials Usa Corp. Antireflective compositions and methods of using same
US8465902B2 (en) 2011-02-08 2013-06-18 Az Electronic Materials Usa Corp. Underlayer coating composition and processes thereof
KR102115442B1 (ko) 2012-04-23 2020-05-28 브레우어 사이언스 인코포레이션 감광성의 현상제-가용성 하부 반사-방지 코팅 재료
US9170494B2 (en) 2012-06-19 2015-10-27 Az Electronic Materials (Luxembourg) S.A.R.L. Antireflective compositions and methods of using same
KR102011446B1 (ko) 2013-02-26 2019-10-14 삼성전자주식회사 반도체 소자의 박막 패턴 형성 방법
KR101982103B1 (ko) 2015-08-31 2019-05-27 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 오버코팅된 포토레지스트와 함께 사용하기 위한 코팅 조성물
KR102487404B1 (ko) * 2017-07-26 2023-01-12 에스케이이노베이션 주식회사 바닥반사 방지막 형성용 중합체 및 이를 포함하는 바닥반사 방지막 형성용 조성물
KR102288386B1 (ko) 2018-09-06 2021-08-10 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴 형성 방법
DE102020131427B4 (de) * 2020-05-21 2024-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresistzusammensetzung und Herstellungsverfahren von Photoresiststruktur
KR102675074B1 (ko) * 2020-11-20 2024-06-12 삼성에스디아이 주식회사 레지스트 하층막용 조성물 및 이를 이용한 패턴형성방법
CN116814119A (zh) * 2023-07-03 2023-09-29 长鑫存储技术有限公司 底部抗反射涂层组合物、图案形成方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US452192A (en) * 1891-05-12 Magazine-gun
US3474058A (en) 1966-01-19 1969-10-21 Nat Distillers Chem Corp Compositions comprising ethylene-vinyl acetate copolymer,fatty acid salt and fatty acid amide
US4200729A (en) 1978-05-22 1980-04-29 King Industries, Inc Curing amino resins with aromatic sulfonic acid oxa-azacyclopentane adducts
US4251665A (en) 1978-05-22 1981-02-17 King Industries, Inc. Aromatic sulfonic acid oxa-azacyclopentane adducts
US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
JP2547607B2 (ja) * 1988-04-06 1996-10-23 富士写真フイルム株式会社 感光性組成物
DE69125634T2 (de) 1990-01-30 1998-01-02 Wako Pure Chem Ind Ltd Chemisch verstärktes Photolack-Material
US5187019A (en) 1991-09-06 1993-02-16 King Industries, Inc. Latent catalysts
US5843624A (en) 1996-03-08 1998-12-01 Lucent Technologies Inc. Energy-sensitive resist material and a process for device fabrication using an energy-sensitive resist material
US6808859B1 (en) 1996-12-31 2004-10-26 Hyundai Electronics Industries Co., Ltd. ArF photoresist copolymers
US5935760A (en) * 1997-10-20 1999-08-10 Brewer Science Inc. Thermosetting polyester anti-reflective coatings for multilayer photoresist processes
US6849377B2 (en) 1998-09-23 2005-02-01 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
US6790587B1 (en) 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
WO2001098834A1 (en) 2000-06-21 2001-12-27 Asahi Glass Company, Limited Resist composition
US6447980B1 (en) 2000-07-19 2002-09-10 Clariant Finance (Bvi) Limited Photoresist composition for deep UV and process thereof
KR100776551B1 (ko) 2001-02-09 2007-11-16 아사히 가라스 가부시키가이샤 레지스트 조성물
US6723488B2 (en) 2001-11-07 2004-04-20 Clariant Finance (Bvi) Ltd Photoresist composition for deep UV radiation containing an additive
US7264913B2 (en) 2002-11-21 2007-09-04 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists
TW200533692A (en) * 2003-11-06 2005-10-16 Showa Denko Kk Curable polyester having an oxetanyl group at end and process for preparing the same, resist composition, jet printing ink composition, curing methods and uses thereof
US7081511B2 (en) 2004-04-05 2006-07-25 Az Electronic Materials Usa Corp. Process for making polyesters
US7691556B2 (en) * 2004-09-15 2010-04-06 Az Electronic Materials Usa Corp. Antireflective compositions for photoresists

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11307495B2 (en) 2016-01-26 2022-04-19 Adeka Corporation Thermal acid generator and resist composition using same
US11754920B2 (en) 2016-01-26 2023-09-12 Adeka Corporation Thermal acid generator and resist composition using same

Also Published As

Publication number Publication date
KR101441705B1 (ko) 2014-09-18
CN101501572A (zh) 2009-08-05
US20080038659A1 (en) 2008-02-14
EP2052293B1 (en) 2013-03-13
TWI417668B (zh) 2013-12-01
MY145421A (en) 2012-02-15
KR20090038020A (ko) 2009-04-17
WO2008017954A3 (en) 2008-04-10
EP2052293A2 (en) 2009-04-29
WO2008017954A2 (en) 2008-02-14
TW200811602A (en) 2008-03-01
JP2010500607A (ja) 2010-01-07
US7638262B2 (en) 2009-12-29

Similar Documents

Publication Publication Date Title
JP5453615B2 (ja) フォトレジスト用反射防止膜組成物
JP5941409B2 (ja) フォトレジスト用反射防止組成物
JP5332046B2 (ja) 架橋可能なポリマーに基づく下層膜用組成物
US7416834B2 (en) Antireflective coating compositions
JP5568791B2 (ja) 反射防止コーティング組成物
CN100503756C (zh) 与上涂光致抗蚀剂一起使用的涂料组合物
JP4465528B2 (ja) フォトレジスト用の反射防止膜組成物
US20080286689A1 (en) Antireflective Coating Compositions
JP5035930B2 (ja) 溶剤混合物を含むフォトレジスト用反射防止膜コーティング組成物

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100604

A524 Written submission of copy of amendment under article 19 pct

Free format text: JAPANESE INTERMEDIATE CODE: A524

Effective date: 20100806

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20100806

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110805

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120405

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120508

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20120807

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20120814

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120905

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130305

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20130521

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20131126

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20131210

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20131212

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20131211

R150 Certificate of patent or registration of utility model

Ref document number: 5453615

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R360 Written notification for declining of transfer of rights

Free format text: JAPANESE INTERMEDIATE CODE: R360

R371 Transfer withdrawn

Free format text: JAPANESE INTERMEDIATE CODE: R371

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313113

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250