MY131022A - Silicon wafers having controlled distribution of defects, and methods of preparing the same - Google Patents

Silicon wafers having controlled distribution of defects, and methods of preparing the same

Info

Publication number
MY131022A
MY131022A MYPI20012486A MY131022A MY 131022 A MY131022 A MY 131022A MY PI20012486 A MYPI20012486 A MY PI20012486A MY 131022 A MY131022 A MY 131022A
Authority
MY
Malaysia
Prior art keywords
wafer
peaks
bottom surfaces
defects
controlled distribution
Prior art date
Application number
Other languages
English (en)
Inventor
Park Jea-Gun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2000-0057344A external-priority patent/KR100378184B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of MY131022A publication Critical patent/MY131022A/en

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
MYPI20012486 2000-09-29 2001-05-24 Silicon wafers having controlled distribution of defects, and methods of preparing the same MY131022A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0057344A KR100378184B1 (ko) 1999-11-13 2000-09-29 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러

Publications (1)

Publication Number Publication Date
MY131022A true MY131022A (en) 2007-07-31

Family

ID=36772732

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20012486 MY131022A (en) 2000-09-29 2001-05-24 Silicon wafers having controlled distribution of defects, and methods of preparing the same

Country Status (4)

Country Link
CN (2) CN1289720C (zh)
IT (1) ITMI20011120A1 (zh)
MY (1) MY131022A (zh)
SG (2) SG108822A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
TWI580825B (zh) * 2012-01-27 2017-05-01 Ｍｅｍｃ新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
JP6100226B2 (ja) * 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
KR101759876B1 (ko) * 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
JP6254748B1 (ja) * 2016-11-14 2017-12-27 信越化学工業株式会社 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63315589A (ja) * 1987-06-16 1988-12-23 Osaka Titanium Seizo Kk 単結晶製造装置
FI901414A0 (fi) * 1989-03-30 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
EP0494307A4 (en) * 1990-03-20 1992-10-14 Nkk Corporation Apparatus for making silicon single crystal
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
JPH0761889A (ja) * 1993-08-26 1995-03-07 Komatsu Electron Metals Co Ltd 半導体単結晶引き上げ装置および引き上げ方法
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3992800B2 (ja) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP4166316B2 (ja) * 1998-02-27 2008-10-15 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP3670493B2 (ja) * 1998-10-09 2005-07-13 東芝セラミックス株式会社 単結晶引上装置
JP3709494B2 (ja) * 1999-02-26 2005-10-26 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller

Also Published As

Publication number Publication date
ITMI20011120A0 (it) 2001-05-25
CN100430531C (zh) 2008-11-05
SG108822A1 (en) 2005-02-28
ITMI20011120A1 (it) 2002-11-25
CN1345986A (zh) 2002-04-24
CN1289720C (zh) 2006-12-13
SG135030A1 (en) 2007-09-28
CN1782140A (zh) 2006-06-07

Similar Documents

Publication Publication Date Title
SG145553A1 (en) Argon/ammonia rapid thermal annealing for silicon wafers, silicon wafers fabricated thereby and czochralski pullers for manufacturing monocrystalline silicon ingots
US6204152B1 (en) Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor
EP1110240B1 (en) Process for preparing an ideal oxygen precipitating silicon wafer
US5401669A (en) Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers
US20060075960A1 (en) Method for the preparation of a semiconductor substrate with a non-uniform distribution of stabilized oxygen precipitates
TW200631101A (en) Method for heat treatment of silicon wafers
US7537657B2 (en) Silicon wafer and process for producing it
ES2004414A6 (es) Procedimiento para la fabricacion de un dispositivo en estado solido
US20090197396A1 (en) Method for Producing Silicon Wafer
EP1284311A3 (en) Silicon semiconductor substrate and process for producing the same
US6436846B1 (en) Combined preanneal/oxidation step using rapid thermal processing
MY131022A (en) Silicon wafers having controlled distribution of defects, and methods of preparing the same
US20050048247A1 (en) Process for making silicon wafers with stabilized oxygen precipitate nucleation centers
KR950001953A (ko) 웨이퍼의 열처리방법
EP1456875A2 (en) Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same
Woodall et al. Proximate capless annealing of GaAs using a controlled‐excess As vapor pressure source
GB2370417A (en) A method and apparatus for forming an under bump metallization structure
JP2003533881A (ja) 結晶または結晶類似の構造体中の欠陥輪郭を調節する方法
KR950004387A (ko) 고 용량 반도체 도펀트의 증착 및 산화 방법
JPS5740940A (en) Semiconductor device
US6268298B1 (en) Method of manufacturing semiconductor device
CN1879204B (zh) 改善晶片的表面粗糙度的工艺
CN1879205B (zh) 改善半导体晶片的表面粗糙度的工艺
KR970006216B1 (ko) 반도체 소자의 필드 산화막 형성방법
Surma et al. Effect of pressure treatment on electrical properties of hydrogen-doped silicon