SG135030A1 - Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots - Google Patents
Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingotsInfo
- Publication number
- SG135030A1 SG135030A1 SG200402260-4A SG2004022604A SG135030A1 SG 135030 A1 SG135030 A1 SG 135030A1 SG 2004022604 A SG2004022604 A SG 2004022604A SG 135030 A1 SG135030 A1 SG 135030A1
- Authority
- SG
- Singapore
- Prior art keywords
- defects
- preparing
- methods
- same
- controlled distribution
- Prior art date
Links
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2000-0057344A KR100378184B1 (en) | 1999-11-13 | 2000-09-29 | Silicon wafer having controlled distribution of defects, process for the preparation of the same and czochralski puller for manufacturing monocrystalline silicon ingot |
Publications (1)
Publication Number | Publication Date |
---|---|
SG135030A1 true SG135030A1 (en) | 2007-09-28 |
Family
ID=36772732
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200103159A SG108822A1 (en) | 2000-09-29 | 2001-05-25 | Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots |
SG200402260-4A SG135030A1 (en) | 2000-09-29 | 2001-05-25 | Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200103159A SG108822A1 (en) | 2000-09-29 | 2001-05-25 | Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots |
Country Status (4)
Country | Link |
---|---|
CN (2) | CN1289720C (en) |
IT (1) | ITMI20011120A1 (en) |
MY (1) | MY131022A (en) |
SG (2) | SG108822A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4853027B2 (en) * | 2006-01-17 | 2012-01-11 | 信越半導体株式会社 | Method for producing silicon single crystal wafer |
TWI580825B (en) * | 2012-01-27 | 2017-05-01 | Memc新加坡有限公司 | Method of preparing cast silicon by directional solidification |
JP6100226B2 (en) * | 2014-11-26 | 2017-03-22 | 信越半導体株式会社 | Heat treatment method for silicon single crystal wafer |
KR101759876B1 (en) * | 2015-07-01 | 2017-07-31 | 주식회사 엘지실트론 | Wafer and method for analyzing defect of the wafer |
JP6254748B1 (en) * | 2016-11-14 | 2017-12-27 | 信越化学工業株式会社 | High photoelectric conversion efficiency solar cell manufacturing method and high photoelectric conversion efficiency solar cell |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63315589A (en) * | 1987-06-16 | 1988-12-23 | Osaka Titanium Seizo Kk | Single crystal production apparatus |
JPH0761889A (en) * | 1993-08-26 | 1995-03-07 | Komatsu Electron Metals Co Ltd | Semiconductor single crystal pull device and method fir pulling semiconductor single crystal |
JPH11240790A (en) * | 1998-02-27 | 1999-09-07 | Komatsu Electronic Metals Co Ltd | Apparatus for producing single crystal |
WO2000050671A1 (en) * | 1999-02-26 | 2000-08-31 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI901414A0 (en) * | 1989-03-30 | 1990-03-21 | Nippon Kokan Kk | ANORDINATION FOR FRAMING A KISELENKRISTALLER. |
WO1991014809A1 (en) * | 1990-03-20 | 1991-10-03 | Nkk Corporation | Apparatus for making silicon single crystal |
US5401669A (en) * | 1993-05-13 | 1995-03-28 | Memc Electronic Materials, Spa | Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers |
JPH1179889A (en) * | 1997-07-09 | 1999-03-23 | Shin Etsu Handotai Co Ltd | Production of and production unit for silicon single crystal with few crystal defect, and silicon single crystal and silicon wafer produced thereby |
JP3992800B2 (en) * | 1997-09-22 | 2007-10-17 | Sumco Techxiv株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
JP3670493B2 (en) * | 1998-10-09 | 2005-07-13 | 東芝セラミックス株式会社 | Single crystal pulling device |
JP3709494B2 (en) * | 1999-02-26 | 2005-10-26 | 株式会社Sumco | Heat shielding member of silicon single crystal pulling device |
-
2001
- 2001-05-24 MY MYPI20012486 patent/MY131022A/en unknown
- 2001-05-25 CN CN 01123301 patent/CN1289720C/en not_active Expired - Lifetime
- 2001-05-25 CN CNB2005101202266A patent/CN100430531C/en not_active Expired - Lifetime
- 2001-05-25 IT IT2001MI001120A patent/ITMI20011120A1/en unknown
- 2001-05-25 SG SG200103159A patent/SG108822A1/en unknown
- 2001-05-25 SG SG200402260-4A patent/SG135030A1/en unknown
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63315589A (en) * | 1987-06-16 | 1988-12-23 | Osaka Titanium Seizo Kk | Single crystal production apparatus |
JPH0761889A (en) * | 1993-08-26 | 1995-03-07 | Komatsu Electron Metals Co Ltd | Semiconductor single crystal pull device and method fir pulling semiconductor single crystal |
JPH11240790A (en) * | 1998-02-27 | 1999-09-07 | Komatsu Electronic Metals Co Ltd | Apparatus for producing single crystal |
WO2000050671A1 (en) * | 1999-02-26 | 2000-08-31 | Memc Electronic Materials, Inc. | Heat shield assembly for crystal puller |
Also Published As
Publication number | Publication date |
---|---|
CN100430531C (en) | 2008-11-05 |
CN1345986A (en) | 2002-04-24 |
CN1782140A (en) | 2006-06-07 |
MY131022A (en) | 2007-07-31 |
SG108822A1 (en) | 2005-02-28 |
CN1289720C (en) | 2006-12-13 |
ITMI20011120A1 (en) | 2002-11-25 |
ITMI20011120A0 (en) | 2001-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG118139A1 (en) | Argon/ammonia rapid thermal annealing for silicon wafers silicon wafers fabricated thereby and czochralski pullers for manufacturing monocrystalline silicon ingots | |
EP1347083A4 (en) | Silicon single crystal wafer and method for producing silicon single crystal | |
EP1193333A4 (en) | Method for preparing silicon single crystal and silicon single crystal | |
EP1143045A4 (en) | Silicon single-crystal wafer for epitaxial wafer, epitaxial wafer, methods for producing them, and evaluating method | |
EP1035236A4 (en) | Silicon single crystal wafer, epitaxial silicon wafer, and method for producing them | |
EP1087041A4 (en) | Production method for silicon wafer and silicon wafer | |
EP1598452A4 (en) | Silicon wafer, process for producing the same and method of growing silicon single crystal | |
EP1310583A4 (en) | Silicon single crystal wafer and method for manufacturing the same | |
EP1035235A4 (en) | Method for producing silicon single crystal wafer and silicon single crystal wafer | |
EP1114885A4 (en) | CZ SINGLE CRYSTAL DOPED WITH Ga AND WAFER AND METHOD FOR PRODUCTION THEREOF | |
EP1170405A4 (en) | Silicon single crystal wafer and production method thereof and soi wafer | |
AU2002214276A1 (en) | Silicon carbide based porous article and method for preparing the same | |
IL151698A0 (en) | Iii-v nitride substrate boule and method of making and using the same | |
EP1326270A4 (en) | Silicon wafer and silicon epitaxial wafer and production methods therefor | |
EP0889510A4 (en) | Method and device for heat-treating single-crystal silicon wafer, single-crystal silicon wafer, and process for producing single-crystal silicon wafer | |
EP1785511A4 (en) | Silicon wafer, process for producing the same and method of growing silicon single crystal | |
AU2001257584A1 (en) | Wafer preparation systems and methods for preparing wafers | |
EP1195455A4 (en) | Silicon wafer, method for determining condition under which silicon single crystal is produced, and method for producing silicon wafer | |
EP1345262A4 (en) | Method for producing silicon wafer and silicon wafer | |
EP1335421A4 (en) | Production method for silicon wafer and silicon wafer | |
EP1158076A4 (en) | Production method for silicon single crystal and production device for single crystal ingot, and heat treating method for silicon single crystal wafer | |
EP1643544A4 (en) | Method for producing silicon epitaxial wafer and silicon epitaxial wafer | |
EP1229155A4 (en) | Silicon wafer, silicon epitaxial wafer, anneal wafer and method for producing them | |
EP1152458A4 (en) | Production method for silicon epitaxial wafer and silicon epitaxial wafer | |
EP1020546A4 (en) | Quartz glass crucible for pulling silicon monocrystal and method of manufacturing the same |