SG108822A1 - Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots - Google Patents

Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots

Info

Publication number
SG108822A1
SG108822A1 SG200103159A SG200103159A SG108822A1 SG 108822 A1 SG108822 A1 SG 108822A1 SG 200103159 A SG200103159 A SG 200103159A SG 200103159 A SG200103159 A SG 200103159A SG 108822 A1 SG108822 A1 SG 108822A1
Authority
SG
Singapore
Prior art keywords
defects
preparing
methods
same
controlled distribution
Prior art date
Application number
SG200103159A
Other languages
English (en)
Inventor
Park Jea-Gun
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR10-2000-0057344A external-priority patent/KR100378184B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of SG108822A1 publication Critical patent/SG108822A1/en

Links

SG200103159A 2000-09-29 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots SG108822A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-2000-0057344A KR100378184B1 (ko) 1999-11-13 2000-09-29 제어된 결함 분포를 갖는 실리콘 웨이퍼, 그의 제조공정및 단결정 실리콘 잉곳의 제조를 위한 초크랄스키 풀러

Publications (1)

Publication Number Publication Date
SG108822A1 true SG108822A1 (en) 2005-02-28

Family

ID=36772732

Family Applications (2)

Application Number Title Priority Date Filing Date
SG200103159A SG108822A1 (en) 2000-09-29 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots
SG200402260-4A SG135030A1 (en) 2000-09-29 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG200402260-4A SG135030A1 (en) 2000-09-29 2001-05-25 Silicon wafers having controlled distribution of defects, methods of preparing the same, and czochralski pullers for manufacturing monocrystalline silicon ingots

Country Status (4)

Country Link
CN (2) CN1289720C (zh)
IT (1) ITMI20011120A1 (zh)
MY (1) MY131022A (zh)
SG (2) SG108822A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4853027B2 (ja) * 2006-01-17 2012-01-11 信越半導体株式会社 シリコン単結晶ウエーハの製造方法
TWI580825B (zh) * 2012-01-27 2017-05-01 Ｍｅｍｃ新加坡有限公司 藉由定向固化作用製備鑄態矽之方法
JP6100226B2 (ja) * 2014-11-26 2017-03-22 信越半導体株式会社 シリコン単結晶ウェーハの熱処理方法
KR101759876B1 (ko) * 2015-07-01 2017-07-31 주식회사 엘지실트론 웨이퍼 및 웨이퍼 결함 분석 방법
WO2018087794A1 (ja) * 2016-11-14 2018-05-17 信越化学工業株式会社 高光電変換効率太陽電池の製造方法及び高光電変換効率太陽電池

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63315589A (ja) * 1987-06-16 1988-12-23 Osaka Titanium Seizo Kk 単結晶製造装置
FI901414A0 (fi) * 1989-03-30 1990-03-21 Nippon Kokan Kk Anordning foer framstaellning av kiselenkristaller.
WO1991014809A1 (en) * 1990-03-20 1991-10-03 Nkk Corporation Apparatus for making silicon single crystal
JPH0761889A (ja) * 1993-08-26 1995-03-07 Komatsu Electron Metals Co Ltd 半導体単結晶引き上げ装置および引き上げ方法
JPH1179889A (ja) * 1997-07-09 1999-03-23 Shin Etsu Handotai Co Ltd 結晶欠陥が少ないシリコン単結晶の製造方法、製造装置並びにこの方法、装置で製造されたシリコン単結晶とシリコンウエーハ
JP3992800B2 (ja) * 1997-09-22 2007-10-17 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置および単結晶の製造方法
JP4166316B2 (ja) * 1998-02-27 2008-10-15 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置
JP3670493B2 (ja) * 1998-10-09 2005-07-13 東芝セラミックス株式会社 単結晶引上装置
JP3709494B2 (ja) * 1999-02-26 2005-10-26 株式会社Ｓｕｍｃｏ シリコン単結晶引上げ装置の熱遮蔽部材
US6197111B1 (en) * 1999-02-26 2001-03-06 Memc Electronic Materials, Inc. Heat shield assembly for crystal puller

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5401669A (en) * 1993-05-13 1995-03-28 Memc Electronic Materials, Spa Process for the preparation of silicon wafers having controlled distribution of oxygen precipitate nucleation centers

Also Published As

Publication number Publication date
CN1782140A (zh) 2006-06-07
CN1345986A (zh) 2002-04-24
CN100430531C (zh) 2008-11-05
SG135030A1 (en) 2007-09-28
MY131022A (en) 2007-07-31
ITMI20011120A1 (it) 2002-11-25
ITMI20011120A0 (it) 2001-05-25
CN1289720C (zh) 2006-12-13

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