MX363099B - Metodos y aparato para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente mas gruesas que otras regiones y esas obleas. - Google Patents

Metodos y aparato para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente mas gruesas que otras regiones y esas obleas.

Info

Publication number
MX363099B
MX363099B MX2016013338A MX2016013338A MX363099B MX 363099 B MX363099 B MX 363099B MX 2016013338 A MX2016013338 A MX 2016013338A MX 2016013338 A MX2016013338 A MX 2016013338A MX 363099 B MX363099 B MX 363099B
Authority
MX
Mexico
Prior art keywords
regions
wafers
thicker
less
micrometers
Prior art date
Application number
MX2016013338A
Other languages
English (en)
Spanish (es)
Other versions
MX2016013338A (es
Inventor
M Sachs Emanuel
Jonczyk Ralf
L Lorenz Adam
L Wallace Richard
D Stephen Hudelson G
Original Assignee
1366 Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 1366 Tech Inc filed Critical 1366 Tech Inc
Publication of MX2016013338A publication Critical patent/MX2016013338A/es
Publication of MX363099B publication Critical patent/MX363099B/es

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
MX2016013338A 2014-04-30 2015-04-17 Metodos y aparato para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente mas gruesas que otras regiones y esas obleas. MX363099B (es)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461986388P 2014-04-30 2014-04-30
US201462011866P 2014-06-13 2014-06-13
PCT/US2015/026389 WO2015167826A1 (en) 2014-04-30 2015-04-17 Methods and apparati for making thin semi-conductor wafers with locally controlled regions that are relatively thicker than other regions and such wafers

Publications (2)

Publication Number Publication Date
MX2016013338A MX2016013338A (es) 2017-04-27
MX363099B true MX363099B (es) 2019-03-08

Family

ID=54359158

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2016013338A MX363099B (es) 2014-04-30 2015-04-17 Metodos y aparato para fabricar obleas semiconductoras delgadas con regiones controladas localmente que son relativamente mas gruesas que otras regiones y esas obleas.

Country Status (13)

Country Link
US (1) US10072351B2 (de)
EP (1) EP3138130B1 (de)
JP (2) JP2017519354A (de)
KR (1) KR20160148004A (de)
CN (2) CN106233468B (de)
ES (1) ES2864962T3 (de)
MX (1) MX363099B (de)
MY (1) MY181209A (de)
PH (1) PH12016502141A1 (de)
SA (1) SA516380177B1 (de)
SG (1) SG11201608411TA (de)
TW (1) TWI669829B (de)
WO (1) WO2015167826A1 (de)

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US10509390B2 (en) 2015-02-12 2019-12-17 Glowforge Inc. Safety and reliability guarantees for laser fabrication
CN107438495B (zh) 2015-02-12 2021-02-05 格罗弗治公司 云控制激光制造
WO2018098394A1 (en) 2016-11-25 2018-05-31 Glowforge Inc. Fabrication with image tracing
US12420355B2 (en) 2016-11-25 2025-09-23 Glowforge Inc. Laser fabrication with beam detection
WO2018098397A1 (en) 2016-11-25 2018-05-31 Glowforge Inc. Calibration of computer-numerically-controlled machine
WO2018098399A1 (en) 2016-11-25 2018-05-31 Glowforge Inc. Controlled deceleration of moveable components in a computer numerically controlled machine
WO2018098398A1 (en) 2016-11-25 2018-05-31 Glowforge Inc. Preset optical components in a computer numerically controlled machine
WO2019083956A1 (en) * 2017-10-24 2019-05-02 1366 Technologies Inc. SEMICONDUCTOR SLICES LONGER THAN STANDARD SQUARE IN INDUSTRY
KR20220044805A (ko) 2019-08-09 2022-04-11 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. 산소 농도가 낮은 영역이 있는 웨이퍼
CN112134024B (zh) * 2020-09-25 2022-07-29 合肥工业大学 一种基于全石墨的三维结构宽带超材料吸波体
IL318736A (en) 2021-06-16 2025-03-01 Conti Innovation Center Llc Mechanically stacked solar transmissive cells or modules
JP7764239B2 (ja) * 2021-12-23 2025-11-05 グローバルウェーハズ・ジャパン株式会社 高抵抗シリコンウェーハの厚さ測定方法及び平坦度測定方法
US12414402B1 (en) 2025-01-03 2025-09-09 Conti Innovation Center, Llc Optimizing cadmium (CD) alloy solar cells with sputtered copper-dopped zinc telluride (ZNTE:CU) back contacts in the presence of hydrogen

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DE19927604A1 (de) * 1999-06-17 2000-12-21 Bayer Ag Silicium mit strukturierter Sauerstoffdotierung, dessen Herstellung und Verwendung
JP2002094098A (ja) 2000-09-19 2002-03-29 Sharp Corp 結晶薄板の製造方法および結晶薄板を用いた太陽電池
JP3932836B2 (ja) * 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
US7018929B2 (en) * 2002-07-02 2006-03-28 Taiwan Semiconductor Manufacturing Co., Ltd Method for reducing a low volatility byproduct from a wafer surface following an etching process
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KR100588425B1 (ko) * 2003-03-27 2006-06-12 실트로닉 아게 실리콘 단결정, 결정된 결함분포를 가진 실리콘 단결정 및 실리콘 반도체 웨이퍼의 제조방법
WO2005013377A1 (en) * 2003-07-25 2005-02-10 Ge Energy (Usa) Llc Semiconductor elements having zones of reduced oxygen
JP4413050B2 (ja) * 2004-03-19 2010-02-10 シャープ株式会社 板状半導体、それを用いた太陽電池および板状半導体製造用下地板
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Also Published As

Publication number Publication date
PH12016502141B1 (en) 2017-01-09
US20170051429A1 (en) 2017-02-23
WO2015167826A1 (en) 2015-11-05
MY181209A (en) 2020-12-21
CN206471339U (zh) 2017-09-05
PH12016502141A1 (en) 2017-01-09
CN106233468A (zh) 2016-12-14
SA516380177B1 (ar) 2020-09-06
EP3138130A4 (de) 2017-11-01
ES2864962T3 (es) 2021-10-14
MX2016013338A (es) 2017-04-27
CN106233468B (zh) 2019-11-29
JP2017519354A (ja) 2017-07-13
JP2020109859A (ja) 2020-07-16
EP3138130A1 (de) 2017-03-08
US10072351B2 (en) 2018-09-11
JP7138950B2 (ja) 2022-09-20
EP3138130B1 (de) 2021-02-24
SG11201608411TA (en) 2016-11-29
KR20160148004A (ko) 2016-12-23
TWI669829B (zh) 2019-08-21
TW201608729A (zh) 2016-03-01

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