MX2022004907A - Dispositivo de visualizacion led. - Google Patents
Dispositivo de visualizacion led.Info
- Publication number
- MX2022004907A MX2022004907A MX2022004907A MX2022004907A MX2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A MX 2022004907 A MX2022004907 A MX 2022004907A
- Authority
- MX
- Mexico
- Prior art keywords
- unit
- led sub
- light emitting
- emitting elements
- disposed
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
- H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
- H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
- H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8314—Electrodes characterised by their shape extending at least partially onto an outer side surface of the bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
- H10H20/8316—Multi-layer electrodes comprising at least one discontinuous layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/8506—Containers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/855—Optical field-shaping means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
- H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/032—Manufacture or treatment of electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/034—Manufacture or treatment of coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0363—Manufacture or treatment of packages of optical field-shaping means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/036—Manufacture or treatment of packages
- H10H20/0364—Manufacture or treatment of packages of interconnections
Landscapes
- Led Device Packages (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201962927196P | 2019-10-29 | 2019-10-29 | |
| US17/082,018 US11489002B2 (en) | 2019-10-29 | 2020-10-28 | LED display apparatus |
| PCT/KR2020/014851 WO2021086026A1 (ko) | 2019-10-29 | 2020-10-29 | Led 디스플레이 장치 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MX2022004907A true MX2022004907A (es) | 2022-06-29 |
Family
ID=75586119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2022004907A MX2022004907A (es) | 2019-10-29 | 2020-10-29 | Dispositivo de visualizacion led. |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US11489002B2 (https=) |
| EP (1) | EP4024453A4 (https=) |
| JP (1) | JP7673061B2 (https=) |
| KR (1) | KR102899779B1 (https=) |
| CN (2) | CN114616674A (https=) |
| BR (1) | BR112022008047A2 (https=) |
| MX (1) | MX2022004907A (https=) |
| WO (1) | WO2021086026A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
| US11437353B2 (en) * | 2019-11-15 | 2022-09-06 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| KR102906031B1 (ko) * | 2019-11-15 | 2025-12-30 | 서울바이오시스 주식회사 | 디스플레이용 발광 소자를 가지는 디스플레이 패널 |
| CN114078897A (zh) * | 2020-08-19 | 2022-02-22 | 京东方科技集团股份有限公司 | 发光器件及其制备方法、显示面板、背光模组和显示装置 |
| US11417703B2 (en) * | 2020-08-31 | 2022-08-16 | Hong Kong Beida Jade Bird Display Limited | Double color micro LED display panel |
| US11476299B2 (en) * | 2020-08-31 | 2022-10-18 | Hong Kong Beida Jade Bird Display Limited | Double color micro LED display panel |
| US11646300B2 (en) * | 2020-09-01 | 2023-05-09 | Jade Bird Display (shanghai) Limited | Double color micro LED display panel |
| CN115117211B (zh) * | 2021-03-18 | 2025-07-01 | 隆达电子股份有限公司 | 半导体晶片与发光装置 |
| CN114664983B (zh) * | 2022-03-22 | 2023-03-21 | 西湖大学 | 一种基于Micro LED的显示装置的制作方法以及显示装置 |
| CN115394762B (zh) * | 2022-05-17 | 2024-07-09 | 诺视科技(苏州)有限公司 | 一种具有透明衬底的像素级分立器件及其制作方法 |
| JP2024092521A (ja) * | 2022-12-26 | 2024-07-08 | 沖電気工業株式会社 | 発光装置 |
| US20240322093A1 (en) * | 2023-03-23 | 2024-09-26 | Yenrich Technology Corporation | Light-emitting module |
| US20240363820A1 (en) * | 2023-04-28 | 2024-10-31 | Seoul Viosys Co., Ltd. | Light emitting module and display device having the same |
| JP7741522B2 (ja) * | 2023-06-16 | 2025-09-18 | シャープ株式会社 | 表示パネル |
| JP7741521B2 (ja) * | 2023-06-16 | 2025-09-18 | シャープ株式会社 | 表示パネル |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0876697A (ja) * | 1994-09-02 | 1996-03-22 | Sharp Corp | 発光表示装置 |
| KR101100579B1 (ko) | 2005-01-06 | 2012-01-13 | 엘지이노텍 주식회사 | 반도체 발광 다이오드 및 그의 제조 방법과 반도체 발광다이오드를 이용한 디스플레이의 제조 방법 |
| TWI594661B (zh) * | 2013-04-19 | 2017-08-01 | 隆達電子股份有限公司 | 發光二極體顯示器及其製造方法 |
| JP5932087B2 (ja) | 2015-03-23 | 2016-06-08 | 株式会社東芝 | 光半導体装置 |
| CN105261710B (zh) * | 2015-11-19 | 2017-05-10 | 深圳市华星光电技术有限公司 | 显示器及其有机发光二极管器件 |
| KR102605973B1 (ko) * | 2016-02-26 | 2023-11-27 | 엘지이노텍 주식회사 | 픽셀 모듈 및 이를 구비한 표시 장치 |
| KR102566499B1 (ko) | 2016-05-26 | 2023-08-11 | 엘지이노텍 주식회사 | 발광 소자 |
| US10964862B2 (en) * | 2016-09-30 | 2021-03-30 | Sensor Electronic Technology, Inc. | Semiconductor heterostructure with multiple active regions |
| KR102503578B1 (ko) * | 2017-06-30 | 2023-02-24 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
| CN111048656B (zh) * | 2017-09-04 | 2024-06-14 | 首尔半导体株式会社 | 显示装置及该显示装置的制造方法 |
| KR102459573B1 (ko) | 2017-09-14 | 2022-10-27 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 |
| CN110121781B (zh) * | 2017-11-08 | 2024-02-23 | 首尔伟傲世有限公司 | 包括多个像素的显示用发光二极管单元及具有该显示用发光二极管单元的显示装置 |
| US11282981B2 (en) * | 2017-11-27 | 2022-03-22 | Seoul Viosys Co., Ltd. | Passivation covered light emitting unit stack |
| US11527519B2 (en) * | 2017-11-27 | 2022-12-13 | Seoul Viosys Co., Ltd. | LED unit for display and display apparatus having the same |
| US10748881B2 (en) * | 2017-12-05 | 2020-08-18 | Seoul Viosys Co., Ltd. | Light emitting device with LED stack for display and display apparatus having the same |
| US10797027B2 (en) * | 2017-12-05 | 2020-10-06 | Seoul Semiconductor Co., Ltd. | Displaying apparatus having light emitting device, method of manufacturing the same and method of transferring light emitting device |
| US10964674B2 (en) * | 2018-02-06 | 2021-03-30 | Lumens Co., Ltd. | Micro-LED display panel |
| KR102769519B1 (ko) * | 2018-02-14 | 2025-02-17 | 에피스타 코포레이션 | 발광 장치, 그 제조 방법 및 디스플레이 모듈 |
| US11476236B2 (en) * | 2018-11-07 | 2022-10-18 | Seoul Viosys Co., Ltd. | Display apparatus |
| US11482650B2 (en) * | 2018-11-07 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device including light shielding layer |
| TWI671489B (zh) * | 2018-11-12 | 2019-09-11 | 台灣愛司帝科技股份有限公司 | 發光二極體顯示器 |
| US10943532B2 (en) * | 2018-12-11 | 2021-03-09 | The Hong Kong University Of Science And Technology | Monolithic full-color light-emitting diode display panel |
| US11508876B2 (en) * | 2018-12-31 | 2022-11-22 | Seoul Viosys Co., Ltd. | Light emitting device package and display device having the same |
| US11211528B2 (en) * | 2019-03-13 | 2021-12-28 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US11756980B2 (en) * | 2019-05-14 | 2023-09-12 | Seoul Viosys Co., Ltd. | LED chip package and manufacturing method of the same |
| US11587914B2 (en) * | 2019-05-14 | 2023-02-21 | Seoul Viosys Co., Ltd. | LED chip and manufacturing method of the same |
| US11901397B2 (en) * | 2019-05-14 | 2024-02-13 | Seoul Viosys Co., Ltd. | LED chip having fan-out structure and manufacturing method of the same |
| US11855121B2 (en) * | 2019-05-14 | 2023-12-26 | Seoul Viosys Co., Ltd. | LED chip and manufacturing method of the same |
| US11482566B2 (en) * | 2019-08-20 | 2022-10-25 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US11398462B2 (en) * | 2019-09-18 | 2022-07-26 | Seoul Viosys Co., Ltd. | Light emitting device for display and light emitting package having the same |
| US11798974B2 (en) * | 2019-09-27 | 2023-10-24 | Seoul Viosys Co., Ltd. | Light emitting device for display and display apparatus having the same |
| US10847083B1 (en) * | 2019-10-14 | 2020-11-24 | Shaoher Pan | Integrated active-matrix light emitting pixel arrays based devices by laser-assisted bonding |
| US11810944B2 (en) * | 2019-10-23 | 2023-11-07 | Seoul Viosys Co., Ltd. | LED display apparatus |
| US11658275B2 (en) * | 2019-10-28 | 2023-05-23 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
| US11817435B2 (en) * | 2019-10-28 | 2023-11-14 | Seoul Viosys Co., Ltd. | Light emitting device for display and LED display apparatus having the same |
| US11489002B2 (en) * | 2019-10-29 | 2022-11-01 | Seoul Viosys Co., Ltd. | LED display apparatus |
-
2020
- 2020-10-28 US US17/082,018 patent/US11489002B2/en active Active
- 2020-10-29 MX MX2022004907A patent/MX2022004907A/es unknown
- 2020-10-29 CN CN202080075517.0A patent/CN114616674A/zh not_active Withdrawn
- 2020-10-29 EP EP20882978.8A patent/EP4024453A4/en active Pending
- 2020-10-29 JP JP2022524027A patent/JP7673061B2/ja active Active
- 2020-10-29 KR KR1020227004596A patent/KR102899779B1/ko active Active
- 2020-10-29 CN CN202022457435.2U patent/CN213782016U/zh active Active
- 2020-10-29 WO PCT/KR2020/014851 patent/WO2021086026A1/ko not_active Ceased
- 2020-10-29 BR BR112022008047A patent/BR112022008047A2/pt unknown
-
2022
- 2022-10-30 US US17/976,864 patent/US11837625B2/en active Active
-
2023
- 2023-12-04 US US18/527,987 patent/US12199133B2/en active Active
-
2024
- 2024-10-31 US US18/933,120 patent/US20250056953A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| US20210126043A1 (en) | 2021-04-29 |
| KR102899779B1 (ko) | 2025-12-18 |
| BR112022008047A2 (pt) | 2022-07-12 |
| US20230053740A1 (en) | 2023-02-23 |
| JP2023501923A (ja) | 2023-01-20 |
| EP4024453A1 (en) | 2022-07-06 |
| EP4024453A4 (en) | 2023-10-25 |
| KR20220091457A (ko) | 2022-06-30 |
| CN213782016U (zh) | 2021-07-23 |
| WO2021086026A1 (ko) | 2021-05-06 |
| US20250056953A1 (en) | 2025-02-13 |
| US11837625B2 (en) | 2023-12-05 |
| CN114616674A (zh) | 2022-06-10 |
| US20240120365A1 (en) | 2024-04-11 |
| JP7673061B2 (ja) | 2025-05-08 |
| US11489002B2 (en) | 2022-11-01 |
| US12199133B2 (en) | 2025-01-14 |
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