MX2021014631A - Diodo emisor de luz vertical. - Google Patents

Diodo emisor de luz vertical.

Info

Publication number
MX2021014631A
MX2021014631A MX2021014631A MX2021014631A MX2021014631A MX 2021014631 A MX2021014631 A MX 2021014631A MX 2021014631 A MX2021014631 A MX 2021014631A MX 2021014631 A MX2021014631 A MX 2021014631A MX 2021014631 A MX2021014631 A MX 2021014631A
Authority
MX
Mexico
Prior art keywords
semiconductor layer
conductive semiconductor
holes
layer
electrode
Prior art date
Application number
MX2021014631A
Other languages
English (en)
Inventor
Joon Hee Lee
Original Assignee
Seoul Viosys Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seoul Viosys Co Ltd filed Critical Seoul Viosys Co Ltd
Publication of MX2021014631A publication Critical patent/MX2021014631A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

Un diodo emisor de luz de acuerdo con una forma de realización comprende: una primera capa semiconductora de tipo conductivo; una capa aislante superior colocada sobre la primera capa semiconductora de tipo conductivo; una mesa, que comprende una capa activa y una segunda capa semiconductora de tipo conductivo, se coloca debajo de una cierta región de la primera capa semiconductora de tipo conductivo para exponer el borde de la primera capa semiconductora de tipo conductivo, y comprende un primer y segundo orificios de paso a través de los cuales se expone la primera capa semiconductora de tipo conductivo; un primer electrodo que comprende las primeras partes de contacto conectadas de forma eléctrica a la primera capa semiconductora de tipo conductivo a través de los primeros orificios de paso y las segundas partes de contacto conectadas de forma eléctrica a la primera capa semiconductora de tipo conductivo a través de los segundos orificios de paso; un segundo electrodo conectado de forma eléctrica a la segunda capa semiconductora de tipo conductivo; y al menos una almohadilla de electrodo superior conectada al segundo electrodo, donde los primeros orificios de paso están colocados en una región rodeada por el borde de la mesa, los segundos orificios de paso están colocados a lo largo del borde de la mesa de modo que algunos de los segundos orificios de paso están rodeados por la capa activa y la segunda capa semiconductora de tipo conductivo, respectivamente, y la capa aislante superior comprende una pluralidad de capas de material.
MX2021014631A 2019-05-30 2019-12-06 Diodo emisor de luz vertical. MX2021014631A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020190064076A KR20200137540A (ko) 2019-05-30 2019-05-30 수직형 발광 다이오드
PCT/KR2019/017222 WO2020241993A1 (ko) 2019-05-30 2019-12-06 수직형 발광 다이오드

Publications (1)

Publication Number Publication Date
MX2021014631A true MX2021014631A (es) 2022-01-27

Family

ID=73506521

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2021014631A MX2021014631A (es) 2019-05-30 2019-12-06 Diodo emisor de luz vertical.

Country Status (9)

Country Link
US (1) US12080828B2 (es)
EP (1) EP3979340A4 (es)
KR (1) KR20200137540A (es)
CN (1) CN112018220A (es)
BR (1) BR112021024052A2 (es)
CA (1) CA3142315A1 (es)
MX (1) MX2021014631A (es)
WO (1) WO2020241993A1 (es)
ZA (2) ZA202109578B (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210010694A (ko) * 2019-07-17 2021-01-28 삼성디스플레이 주식회사 발광 소자, 이의 제조 방법 및 표시 장치
DE102019126026A1 (de) * 2019-09-26 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip
JP7130130B2 (ja) * 2019-12-31 2022-09-02 チョンチン コンカ フォトエレクトリック テクノロジー リサーチ インスティテュート カンパニー リミテッド マイクロ発光ダイオードチップおよびその製造方法、並びに表示装置
US20240038936A1 (en) * 2021-10-14 2024-02-01 Huaian Aucksun Optoelectronics Technology Co., Ltd LED Chip and Preparation Method Therefor
CN114093996B (zh) * 2021-11-19 2024-06-21 淮安澳洋顺昌光电技术有限公司 半导体发光器件
WO2023123469A1 (zh) * 2021-12-31 2023-07-06 厦门三安光电有限公司 一种发光二极管及其发光装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5123269B2 (ja) * 2008-09-30 2013-01-23 ソウル オプト デバイス カンパニー リミテッド 発光素子及びその製造方法
US8772805B2 (en) * 2010-03-31 2014-07-08 Seoul Viosys Co., Ltd. High efficiency light emitting diode and method for fabricating the same
KR101793276B1 (ko) * 2010-09-24 2017-11-02 엘지이노텍 주식회사 발광 소자
KR101969334B1 (ko) * 2011-11-16 2019-04-17 엘지이노텍 주식회사 발광 소자 및 이를 구비한 발광 장치
WO2013089459A1 (en) * 2011-12-14 2013-06-20 Seoul Opto Device Co., Ltd. Semiconductor device and method of fabricating the same
WO2013095037A1 (ko) * 2011-12-23 2013-06-27 서울옵토디바이스(주) 발광다이오드 및 그 제조 방법
JP5953155B2 (ja) * 2012-02-24 2016-07-20 スタンレー電気株式会社 半導体発光装置
KR102212666B1 (ko) * 2014-06-27 2021-02-05 엘지이노텍 주식회사 발광소자
KR20160037060A (ko) * 2014-09-26 2016-04-05 서울바이오시스 주식회사 발광소자 및 그 제조 방법
KR102554231B1 (ko) * 2016-06-16 2023-07-12 서울바이오시스 주식회사 전극 구조를 갖는 수직형 발광 다이오드 및 그것을 갖는 발광 다이오드 패키지
KR20180084652A (ko) * 2017-01-16 2018-07-25 서울바이오시스 주식회사 수직형 발광 다이오드
KR102302592B1 (ko) * 2017-07-18 2021-09-15 삼성전자주식회사 반도체 발광 소자
DE102017117414A1 (de) * 2017-08-01 2019-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement

Also Published As

Publication number Publication date
BR112021024052A2 (pt) 2022-01-11
US20220149241A1 (en) 2022-05-12
CA3142315A1 (en) 2020-12-03
ZA202306453B (en) 2023-10-25
ZA202109578B (en) 2024-06-26
WO2020241993A1 (ko) 2020-12-03
EP3979340A1 (en) 2022-04-06
EP3979340A4 (en) 2023-07-05
CN112018220A (zh) 2020-12-01
KR20200137540A (ko) 2020-12-09
US12080828B2 (en) 2024-09-03

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