MX169093B - Metodo para depositar una aleacion semiconductora tipo - p mejorada - Google Patents
Metodo para depositar una aleacion semiconductora tipo - p mejoradaInfo
- Publication number
- MX169093B MX169093B MX000509A MX50985A MX169093B MX 169093 B MX169093 B MX 169093B MX 000509 A MX000509 A MX 000509A MX 50985 A MX50985 A MX 50985A MX 169093 B MX169093 B MX 169093B
- Authority
- MX
- Mexico
- Prior art keywords
- halogen
- depositing
- alloy
- boron
- improved type
- Prior art date
Links
- 239000000956 alloy Substances 0.000 title abstract 4
- 229910045601 alloy Inorganic materials 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000000151 deposition Methods 0.000 title abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910052736 halogen Inorganic materials 0.000 abstract 2
- 150000002367 halogens Chemical class 0.000 abstract 2
- 125000002577 pseudohalo group Chemical group 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 1
- 239000002243 precursor Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/206—Particular processes or apparatus for continuous treatment of the devices, e.g. roll-to roll processes, multi-chamber deposition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08264—Silicon-based comprising seven or more silicon-based layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08214—Silicon-based
- G03G5/08278—Depositing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02529—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
La presente invención se refiere a un metodo para depositar una aleación semiconducta amorfa de tipo P mejorada, que incluye por lo menos boro y un halógeno o un seudo-halógeno, incluyendo el metodo establecer una descarga luminiscente en una mezcla gaseosa que incluye por lo menos un gas precursor semiconductor, una fuente gaseosa de boro combinada con un halógeno o un seudo-halógeno, caracterizado en incorporar monoatómicamente por lo menos 1.9 por ciento atómico de boro en la aleación semiconductora, a medida que se está depositando la aleación.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/668,435 US4624862A (en) | 1984-11-05 | 1984-11-05 | Boron doped semiconductor materials and method for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
MX169093B true MX169093B (es) | 1993-06-22 |
Family
ID=24682293
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
MX000509A MX169093B (es) | 1984-11-05 | 1985-11-05 | Metodo para depositar una aleacion semiconductora tipo - p mejorada |
Country Status (11)
Country | Link |
---|---|
US (1) | US4624862A (es) |
EP (1) | EP0181113A3 (es) |
JP (1) | JPH07123112B2 (es) |
CN (1) | CN1008574B (es) |
AU (1) | AU4900285A (es) |
BR (1) | BR8505510A (es) |
CA (1) | CA1263731A (es) |
ES (1) | ES8702954A1 (es) |
IN (1) | IN165184B (es) |
MX (1) | MX169093B (es) |
ZA (1) | ZA858137B (es) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4891330A (en) * | 1987-07-27 | 1990-01-02 | Energy Conversion Devices, Inc. | Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements |
JP2692683B2 (ja) * | 1988-04-05 | 1997-12-17 | 富士通株式会社 | 半導体装置とその製造方法 |
US5180692A (en) * | 1988-03-30 | 1993-01-19 | Tokyo Electron Limited | Method for the manufacture of boron-containing films by CVD or epitaxial techniques using boron trifluoride |
JP2727106B2 (ja) * | 1988-03-30 | 1998-03-11 | 東京エレクトロン株式会社 | 膜形成方法 |
JP2719036B2 (ja) * | 1990-08-10 | 1998-02-25 | 株式会社富士電機総合研究所 | 非晶質光電変換装置およびその製造方法 |
US5162239A (en) * | 1990-12-27 | 1992-11-10 | Xerox Corporation | Laser crystallized cladding layers for improved amorphous silicon light-emitting diodes and radiation sensors |
JP3659512B2 (ja) * | 1993-12-20 | 2005-06-15 | キヤノン株式会社 | 光起電力素子及びその形成方法及びその形成装置 |
JP3370806B2 (ja) | 1994-11-25 | 2003-01-27 | 株式会社半導体エネルギー研究所 | Mis型半導体装置の作製方法 |
US6287888B1 (en) | 1997-12-26 | 2001-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and process for producing photoelectric conversion device |
JP4293385B2 (ja) * | 1998-01-27 | 2009-07-08 | 株式会社半導体エネルギー研究所 | 光電変換装置の作製方法 |
JP3913123B2 (ja) * | 2001-06-28 | 2007-05-09 | キヤノン株式会社 | 電子写真感光体の製造方法 |
US8222072B2 (en) * | 2002-12-20 | 2012-07-17 | The Trustees Of Princeton University | Methods of fabricating devices by low pressure cold welding |
US20040142104A1 (en) * | 2003-01-07 | 2004-07-22 | Woolley Christopher P. | Apparatus and method for depositing environmentally sensitive thin film materials |
US7179543B2 (en) * | 2003-10-06 | 2007-02-20 | The Trustees Of Princeton University | Doping of organic opto-electronic devices to extend reliability |
TW200825563A (en) * | 2006-12-11 | 2008-06-16 | Innolux Display Corp | Light supply device and liquid crystal display device using the same |
US9620664B2 (en) | 2010-05-25 | 2017-04-11 | Mossey Creek Technologies, Inc. | Coating of graphite tooling for manufacture of semiconductors |
US9908282B2 (en) | 2010-05-25 | 2018-03-06 | Mossey Creek Technologies, Inc. | Method for producing a semiconductor using a vacuum furnace |
WO2011150057A2 (en) * | 2010-05-25 | 2011-12-01 | Mossey Creek Solar, LLC | Method of producing a solar cell |
US8728831B2 (en) * | 2010-12-30 | 2014-05-20 | Stmicroelectronics Pte. Ltd. | Reconstituted wafer warpage adjustment |
WO2013013138A1 (en) | 2011-07-20 | 2013-01-24 | Mossey Creek Solar, LLC | Substrate for use in preparing solar cells |
US9543493B2 (en) | 2011-11-22 | 2017-01-10 | Mossey Creek Technologies, Inc. | Packaging for thermoelectric subcomponents |
US20140305478A1 (en) | 2013-04-15 | 2014-10-16 | Mossey Creek Solar, LLC | Method for Producting a Thermoelectric Material |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3969163A (en) * | 1974-09-19 | 1976-07-13 | Texas Instruments Incorporated | Vapor deposition method of forming low cost semiconductor solar cells including reconstitution of the reacted gases |
GB2033355B (en) * | 1978-09-07 | 1982-05-06 | Standard Telephones Cables Ltd | Semiconductor processing |
US4410558A (en) * | 1980-05-19 | 1983-10-18 | Energy Conversion Devices, Inc. | Continuous amorphous solar cell production system |
JPS574053A (en) * | 1980-06-09 | 1982-01-09 | Canon Inc | Photoconductive member |
US4394425A (en) * | 1980-09-12 | 1983-07-19 | Canon Kabushiki Kaisha | Photoconductive member with α-Si(C) barrier layer |
US4557987A (en) * | 1980-12-23 | 1985-12-10 | Canon Kabushiki Kaisha | Photoconductive member having barrier layer and amorphous silicon charge generation and charge transport layers |
GB2095030B (en) * | 1981-01-08 | 1985-06-12 | Canon Kk | Photoconductive member |
DE3200376A1 (de) * | 1981-01-09 | 1982-11-04 | Canon K.K., Tokyo | Fotoleitfaehiges element |
JPS5891683A (ja) * | 1981-11-26 | 1983-05-31 | Canon Inc | 光導電部材 |
US4465750A (en) * | 1981-12-22 | 1984-08-14 | Canon Kabushiki Kaisha | Photoconductive member with a -Si having two layer regions |
US4483911A (en) * | 1981-12-28 | 1984-11-20 | Canon Kabushiki Kaisha | Photoconductive member with amorphous silicon-carbon surface layer |
US4409424A (en) * | 1982-06-21 | 1983-10-11 | Genevieve Devaud | Compensated amorphous silicon solar cell |
-
1984
- 1984-11-05 US US06/668,435 patent/US4624862A/en not_active Expired - Lifetime
-
1985
- 1985-10-21 EP EP85307589A patent/EP0181113A3/en not_active Withdrawn
- 1985-10-23 ZA ZA858137A patent/ZA858137B/xx unknown
- 1985-10-23 AU AU49002/85A patent/AU4900285A/en not_active Abandoned
- 1985-10-28 CA CA000493979A patent/CA1263731A/en not_active Expired
- 1985-11-04 CN CN85108824A patent/CN1008574B/zh not_active Expired
- 1985-11-04 ES ES548500A patent/ES8702954A1/es not_active Expired
- 1985-11-04 BR BR8505510A patent/BR8505510A/pt unknown
- 1985-11-05 JP JP60247843A patent/JPH07123112B2/ja not_active Expired - Lifetime
- 1985-11-05 MX MX000509A patent/MX169093B/es unknown
- 1985-11-06 IN IN929/DEL/85A patent/IN165184B/en unknown
Also Published As
Publication number | Publication date |
---|---|
BR8505510A (pt) | 1986-08-05 |
EP0181113A2 (en) | 1986-05-14 |
JPH07123112B2 (ja) | 1995-12-25 |
JPS61180426A (ja) | 1986-08-13 |
CN85108824A (zh) | 1986-08-06 |
IN165184B (es) | 1989-08-26 |
ZA858137B (en) | 1986-06-25 |
ES8702954A1 (es) | 1987-01-16 |
CN1008574B (zh) | 1990-06-27 |
ES548500A0 (es) | 1987-01-16 |
EP0181113A3 (en) | 1987-04-22 |
AU4900285A (en) | 1986-05-15 |
CA1263731A (en) | 1989-12-05 |
US4624862A (en) | 1986-11-25 |
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