MD4010G2 - Способ получения тонких пленок оксидных полупроводников In2O3 - Google Patents

Способ получения тонких пленок оксидных полупроводников In2O3 Download PDF

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Publication number
MD4010G2
MD4010G2 MDA20070334A MD20070334A MD4010G2 MD 4010 G2 MD4010 G2 MD 4010G2 MD A20070334 A MDA20070334 A MD A20070334A MD 20070334 A MD20070334 A MD 20070334A MD 4010 G2 MD4010 G2 MD 4010G2
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MD
Moldova
Prior art keywords
in2o3
oxide semiconductors
thin films
films
obtaining thin
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Application number
MDA20070334A
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English (en)
Romanian (ro)
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MD4010F2 (en
MD20070334A (en
Inventor
Генадий КОРОТЧЕНКОВ
Original Assignee
Технический университет Молдовы
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Application filed by Технический университет Молдовы filed Critical Технический университет Молдовы
Priority to MDA20070334A priority Critical patent/MD4010G2/ru
Publication of MD20070334A publication Critical patent/MD20070334A/xx
Publication of MD4010F2 publication Critical patent/MD4010F2/xx
Publication of MD4010G2 publication Critical patent/MD4010G2/ru

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  • Formation Of Insulating Films (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)

Abstract

Изобретение относится к способу получения тонких пленок оксидных полупроводников, в частности In2O3.Способ включает осаждение пленок посредством спрей пиролиза при температуре 450…550°С из водных растворов InCl3 с концентрацией соли металла в растворе превышающей 0,2М с последующим отжигом в нейтральной или кислородсодержащей атмосфере при температуре не менее 1000°С.Результат изобретения заключается в получении высокотекстурированных в направлении (100) пленок толщиной 200…3000 нм с большим размером кристаллографически плоской поверхности кристаллитов.
MDA20070334A 2007-12-12 2007-12-12 Способ получения тонких пленок оксидных полупроводников In2O3 MD4010G2 (ru)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070334A MD4010G2 (ru) 2007-12-12 2007-12-12 Способ получения тонких пленок оксидных полупроводников In2O3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070334A MD4010G2 (ru) 2007-12-12 2007-12-12 Способ получения тонких пленок оксидных полупроводников In2O3

Publications (3)

Publication Number Publication Date
MD20070334A MD20070334A (en) 2009-09-30
MD4010F2 MD4010F2 (en) 2010-01-29
MD4010G2 true MD4010G2 (ru) 2010-08-31

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MDA20070334A MD4010G2 (ru) 2007-12-12 2007-12-12 Способ получения тонких пленок оксидных полупроводников In2O3

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD175Z (ru) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Устройство для получения сверхпроводящих пленок
MD20080058A (ru) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Устройство для получения сверхпроводящих слоев
MD193Z (ru) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Способ получения полисульфидной плёнки
MD353Z (ru) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Сверхпроводящий спиновой вентиль

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260695A (ja) * 1990-09-28 1992-09-16 Commiss Energ Atom 酸化物型結晶薄膜及びその製造方法
JPH05148091A (ja) * 1991-12-03 1993-06-15 Nittetsu Mining Co Ltd ルチル単結晶の処理方法
RU2051207C1 (ru) * 1992-02-27 1995-12-27 Санкт-Петербургский государственный университет Способ получения слоев гидроксидов металлов

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260695A (ja) * 1990-09-28 1992-09-16 Commiss Energ Atom 酸化物型結晶薄膜及びその製造方法
JPH05148091A (ja) * 1991-12-03 1993-06-15 Nittetsu Mining Co Ltd ルチル単結晶の処理方法
RU2051207C1 (ru) * 1992-02-27 1995-12-27 Санкт-Петербургский государственный университет Способ получения слоев гидроксидов металлов

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Besenbacher F., Lægsgaard E., Stensgaard I. Fast-scanning STM studies. Materials Today 8(5), 2005, p. 26-30 *
Masayuki Kamei, Hiromi Enomoto, Itaru Yasui. Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films. *
Masayuki Kamei, Hiromi Enomoto, Itaru Yasui. Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films. Thin Solid Films, 392, 2001, p. 265-268 *
Ratcheva T.M., Nanova M.D., Vassilev L.V., Mikhailov M.G. Properties of In2O3:Te films prepared by the spraying method. Thin Solid Films, 139, 1986, p. *
Ratcheva T.M., Nanova M.D., Vassilev L.V., Mikhailov M.G. Properties of In2O3:Te films prepared by the spraying method. Thin Solid Films, 139, 1986, p. 189-199 *
Zheng Wei Pan, Zu Rong Dai, Zhong Lin Wang. Nanobelts of Semiconducting Oxides. Science, vol. 291, 9 march, 2001, p. 19471949 *

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MD4010F2 (en) 2010-01-29
MD20070334A (en) 2009-09-30

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