MD4010G2 - Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3 - Google Patents

Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3 Download PDF

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Publication number
MD4010G2
MD4010G2 MDA20070334A MD20070334A MD4010G2 MD 4010 G2 MD4010 G2 MD 4010G2 MD A20070334 A MDA20070334 A MD A20070334A MD 20070334 A MD20070334 A MD 20070334A MD 4010 G2 MD4010 G2 MD 4010G2
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MD
Moldova
Prior art keywords
in2o3
oxide semiconductors
thin films
films
obtaining thin
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Application number
MDA20070334A
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English (en)
Russian (ru)
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MD20070334A (ro
MD4010F2 (ro
Inventor
Генадий КОРОТЧЕНКОВ
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Технический университет Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Технический университет Молдовы filed Critical Технический университет Молдовы
Priority to MDA20070334A priority Critical patent/MD4010G2/ro
Publication of MD20070334A publication Critical patent/MD20070334A/ro
Publication of MD4010F2 publication Critical patent/MD4010F2/ro
Publication of MD4010G2 publication Critical patent/MD4010G2/ro

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  • Formation Of Insulating Films (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compounds Of Alkaline-Earth Elements, Aluminum Or Rare-Earth Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)

Abstract

Invenţia se referă la un procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice, în particular de In2O3.Procedeul include depunerea peliculelor prin piroliză spray la temperatura de 450…550°C din soluţii apoase de InCl3 cu concentraţia sării de metal din soluţie ce depăşeşte 0,2M cu recoacerea ulterioară în atmosferă neutră sau cu conţinut de oxigen la o temperatură nu mai mică de 1000°C.Rezultatul invenţiei constă în obţinerea peliculelor cu textură înaltă în direcţia (100) cu grosimea de 200…3000 nm cu dimensiuni mari ale suprafeţei cristalografice plate a cristalitelor.
MDA20070334A 2007-12-12 2007-12-12 Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3 MD4010G2 (ro)

Priority Applications (1)

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MDA20070334A MD4010G2 (ro) 2007-12-12 2007-12-12 Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070334A MD4010G2 (ro) 2007-12-12 2007-12-12 Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3

Publications (3)

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MD20070334A MD20070334A (ro) 2009-09-30
MD4010F2 MD4010F2 (ro) 2010-01-29
MD4010G2 true MD4010G2 (ro) 2010-08-31

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MDA20070334A MD4010G2 (ro) 2007-12-12 2007-12-12 Procedeu de obţinere a peliculelor subţiri de semiconductoare oxidice de In2O3

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD20080058A (ro) * 2008-02-25 2009-08-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Dispozitiv de obţinere a peliculelor supraconductoare
MD175Z (ro) * 2008-02-25 2010-10-31 Институт Электронной Инженерии И Промышленных Технологий Академии Наук Молдовы Dispozitiv de obţinere a peliculelor supraconductoare
MD193Z (ro) * 2009-06-04 2010-11-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de obţinere a peliculei polisulfidice
MD353Z (ro) * 2010-02-24 2011-10-31 Институт Электронной Инженерии И Промышленных Технологий Ventil supraconductor de spin

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260695A (ja) * 1990-09-28 1992-09-16 Commiss Energ Atom 酸化物型結晶薄膜及びその製造方法
JPH05148091A (ja) * 1991-12-03 1993-06-15 Nittetsu Mining Co Ltd ルチル単結晶の処理方法
RU2051207C1 (ru) * 1992-02-27 1995-12-27 Санкт-Петербургский государственный университет Способ получения слоев гидроксидов металлов

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04260695A (ja) * 1990-09-28 1992-09-16 Commiss Energ Atom 酸化物型結晶薄膜及びその製造方法
JPH05148091A (ja) * 1991-12-03 1993-06-15 Nittetsu Mining Co Ltd ルチル単結晶の処理方法
RU2051207C1 (ru) * 1992-02-27 1995-12-27 Санкт-Петербургский государственный университет Способ получения слоев гидроксидов металлов

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Besenbacher F., Lægsgaard E., Stensgaard I. Fast-scanning STM studies. Materials Today 8(5), 2005, p. 26-30 *
Masayuki Kamei, Hiromi Enomoto, Itaru Yasui. Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films. *
Masayuki Kamei, Hiromi Enomoto, Itaru Yasui. Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films. Thin Solid Films, 392, 2001, p. 265-268 *
Ratcheva T.M., Nanova M.D., Vassilev L.V., Mikhailov M.G. Properties of In2O3:Te films prepared by the spraying method. Thin Solid Films, 139, 1986, p. *
Ratcheva T.M., Nanova M.D., Vassilev L.V., Mikhailov M.G. Properties of In2O3:Te films prepared by the spraying method. Thin Solid Films, 139, 1986, p. 189-199 *
Zheng Wei Pan, Zu Rong Dai, Zhong Lin Wang. Nanobelts of Semiconducting Oxides. Science, vol. 291, 9 march, 2001, p. 19471949 *

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Publication number Publication date
MD20070334A (ro) 2009-09-30
MD4010F2 (ro) 2010-01-29

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