LU72605A1 - - Google Patents

Info

Publication number
LU72605A1
LU72605A1 LU72605A LU72605A LU72605A1 LU 72605 A1 LU72605 A1 LU 72605A1 LU 72605 A LU72605 A LU 72605A LU 72605 A LU72605 A LU 72605A LU 72605 A1 LU72605 A1 LU 72605A1
Authority
LU
Luxembourg
Application number
LU72605A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19742445091 external-priority patent/DE2445091A1/de
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Priority claimed from DE19742445078 external-priority patent/DE2445078C3/de
Priority claimed from DE2445137A external-priority patent/DE2445137C3/de
Priority claimed from DE2505816A external-priority patent/DE2505816C3/de
Priority claimed from DE2513207A external-priority patent/DE2513207C2/de
Application filed filed Critical
Publication of LU72605A1 publication Critical patent/LU72605A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
LU72605A 1974-09-20 1975-05-28 LU72605A1 (enrdf_load_stackoverflow)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE19742445091 DE2445091A1 (de) 1974-09-20 1974-09-20 Speicher-fet mit isoliertem, floatendem speichergate
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor
DE19742445078 DE2445078C3 (de) 1974-09-20 In integrierter Technik hergestellter elektronischer Speicher
DE2445137A DE2445137C3 (de) 1974-09-20 1974-09-20 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2505816A DE2505816C3 (de) 1974-09-20 1975-02-12 Verfahren zum Betrieb eines n-Kanal-Speicher-FET, n-Kanal-Speicher-FET zur Ausübung des Verfahrens und Anwendung des Verfahrens auf die n-Kanal-Speicher-FETs einer Speichermatrix
DE2513207A DE2513207C2 (de) 1974-09-20 1975-03-25 n-Kanal-Speicher-FET

Publications (1)

Publication Number Publication Date
LU72605A1 true LU72605A1 (enrdf_load_stackoverflow) 1975-08-21

Family

ID=27544228

Family Applications (1)

Application Number Title Priority Date Filing Date
LU72605A LU72605A1 (enrdf_load_stackoverflow) 1974-09-20 1975-05-28

Country Status (1)

Country Link
LU (1) LU72605A1 (enrdf_load_stackoverflow)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2603154A1 (de) * 1976-01-28 1977-08-04 Siemens Ag Lsi-baustein
DE2711895A1 (de) * 1976-03-26 1977-10-06 Hughes Aircraft Co Feldeffekttransistor mit zwei gateelektroden und verfahren zu dessen herstellung
DE2727419A1 (de) * 1976-06-18 1977-12-29 Ncr Co Matrixspeicher
DE2638730A1 (de) * 1974-09-20 1978-03-02 Siemens Ag N-kanal-speicher-fet
DE2643948A1 (de) * 1976-09-29 1978-03-30 Siemens Ag Baustein mit in einer matrix angeordneten speicher-fets
DE2643987A1 (de) * 1974-09-20 1978-03-30 Siemens Ag N-kanal-speicher-fet
DE2643932A1 (de) * 1974-09-20 1978-03-30 Siemens Ag N-kanal-speicher-fet

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2638730A1 (de) * 1974-09-20 1978-03-02 Siemens Ag N-kanal-speicher-fet
DE2643987A1 (de) * 1974-09-20 1978-03-30 Siemens Ag N-kanal-speicher-fet
DE2643932A1 (de) * 1974-09-20 1978-03-30 Siemens Ag N-kanal-speicher-fet
DE2603154A1 (de) * 1976-01-28 1977-08-04 Siemens Ag Lsi-baustein
DE2711895A1 (de) * 1976-03-26 1977-10-06 Hughes Aircraft Co Feldeffekttransistor mit zwei gateelektroden und verfahren zu dessen herstellung
DE2727419A1 (de) * 1976-06-18 1977-12-29 Ncr Co Matrixspeicher
DE2643948A1 (de) * 1976-09-29 1978-03-30 Siemens Ag Baustein mit in einer matrix angeordneten speicher-fets

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