KR970077851A - 화합물 반도체용 전극 재료 - Google Patents

화합물 반도체용 전극 재료 Download PDF

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Publication number
KR970077851A
KR970077851A KR1019970019897A KR19970019897A KR970077851A KR 970077851 A KR970077851 A KR 970077851A KR 1019970019897 A KR1019970019897 A KR 1019970019897A KR 19970019897 A KR19970019897 A KR 19970019897A KR 970077851 A KR970077851 A KR 970077851A
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South Korea
Prior art keywords
electrode material
compound semiconductor
weight
noble metal
electrode
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KR1019970019897A
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English (en)
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KR100453017B1 (ko
Inventor
야스시 이에치카
요시노부 오노
도모유키 다카다
가쓰미 이누이
Original Assignee
고사이 아키오
스미토모가가쿠고교 가부시키가이샤
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Publication of KR970077851A publication Critical patent/KR970077851A/ko
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Publication of KR100453017B1 publication Critical patent/KR100453017B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/452—Ohmic electrodes on AIII-BV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
  • Conductive Materials (AREA)

Abstract

우수한 옴 접촉(ohmic contact)을 수득할 수 있으며 전극이 이를 사용함으로써 화합물 반도체를 사용하는 장치의 구동 전압을 감소시킬 수 있는, p형 불순물로 도우프된 화학식 InxGayAlzN의 III족 내지 V족 화합물 반도체용 전극 재료(단 x+y+z=1이고, 0x1이며, 0y1이고, 0z1이다)를 제공한다.
전극 재료는 적어도 Ca와 귀금속을 포함하는 금속(여기서, Ca와 귀금속의 총량은, 전체 전극 재료의 중량을 기준으로 하여, 50 중량% 이상 100 중량% 이하이다)

Description

화합물 반도체용 전극 재료
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 다른 전극이 본 발명의 전극 위에 적층되어 있는 전극의 양태를 설명하는 도식적인 단면도이다.

Claims (2)

  1. p형 불순물로 도우프된 화학식 InxGayAlzN의 III족 내지 V족 화합물 반도체용 전극 재료(단 x+y+z=1이고, 0x1이며, 0y1이고, 0z1이다)로서, 적어도 Ca와 귀금속을 포함하고, Ca와 귀금속의 총량이, 전체 전극 재료의 중량을 기준으로 하여, 50 중량% 이상 100 중량% 이하인 전극 재료.
  2. p형 불순물로 도우프된 화학식 InxGayAlzN의 III족 내지 V족 화합물 반도체용 전극(단 x+y+z=1이고, 0x1이며, 0y1이고, 0z1이다)으로서, 제 1 항의 전극 재료를 사용하여 화합물 반도체 위에 형성된 전극.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019970019897A 1996-05-23 1997-05-22 화합물반도체용전극재료 KR100453017B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP96-128299 1996-05-23
JP12829996A JP3106956B2 (ja) 1996-05-23 1996-05-23 化合物半導体用電極材料

Publications (2)

Publication Number Publication Date
KR970077851A true KR970077851A (ko) 1997-12-12
KR100453017B1 KR100453017B1 (ko) 2005-01-13

Family

ID=14981367

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970019897A KR100453017B1 (ko) 1996-05-23 1997-05-22 화합물반도체용전극재료

Country Status (7)

Country Link
US (1) US6104044A (ko)
JP (1) JP3106956B2 (ko)
KR (1) KR100453017B1 (ko)
DE (1) DE19721458A1 (ko)
GB (1) GB2313475B (ko)
SG (1) SG52973A1 (ko)
TW (1) TW343355B (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3693142B2 (ja) * 1997-12-11 2005-09-07 株式会社リコー 半導体レーザ装置およびその製造方法
US6936859B1 (en) 1998-05-13 2005-08-30 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using group III nitride compound
US20010042866A1 (en) * 1999-02-05 2001-11-22 Carrie Carter Coman Inxalygazn optical emitters fabricated via substrate removal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0656883B2 (ja) * 1986-03-03 1994-07-27 鐘淵化学工業株式会社 半導体装置
JP2704181B2 (ja) * 1989-02-13 1998-01-26 日本電信電話株式会社 化合物半導体単結晶薄膜の成長方法
DE69009814T2 (de) * 1989-03-24 1994-11-17 Mitsubishi Materials Corp Silberlegierungsblatt zur Verbindung von Sonnenzellen.
US5578839A (en) * 1992-11-20 1996-11-26 Nichia Chemical Industries, Ltd. Light-emitting gallium nitride-based compound semiconductor device
US5708301A (en) * 1994-02-28 1998-01-13 Sumitomo Chemical Company, Limited Electrode material and electrode for III-V group compound semiconductor
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JPH0832112A (ja) * 1994-07-20 1996-02-02 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US5751752A (en) * 1994-09-14 1998-05-12 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor

Also Published As

Publication number Publication date
GB9710066D0 (en) 1997-07-09
GB2313475A (en) 1997-11-26
JP3106956B2 (ja) 2000-11-06
US6104044A (en) 2000-08-15
SG52973A1 (en) 1998-09-28
DE19721458A1 (de) 1997-11-27
JPH09312273A (ja) 1997-12-02
KR100453017B1 (ko) 2005-01-13
TW343355B (en) 1998-10-21
GB2313475B (en) 1998-11-18

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