KR970072310A - 집적 회로 절연체 및 방법 - Google Patents

집적 회로 절연체 및 방법 Download PDF

Info

Publication number
KR970072310A
KR970072310A KR1019970016238A KR19970016238A KR970072310A KR 970072310 A KR970072310 A KR 970072310A KR 1019970016238 A KR1019970016238 A KR 1019970016238A KR 19970016238 A KR19970016238 A KR 19970016238A KR 970072310 A KR970072310 A KR 970072310A
Authority
KR
South Korea
Prior art keywords
integrated circuit
dielectric constant
dielectric material
dielectric
interlevel
Prior art date
Application number
KR1019970016238A
Other languages
English (en)
Other versions
KR100518988B1 (ko
Inventor
로버트 에이취. 헤이브맨
마노즈 케이. 제인
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 윌리엄 비. 켐플러, 텍사스 인스트루먼츠 인코포레이티드 filed Critical 윌리엄 비. 켐플러
Publication of KR970072310A publication Critical patent/KR970072310A/ko
Application granted granted Critical
Publication of KR100518988B1 publication Critical patent/KR100518988B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/5329—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 메탈 레벨내의 갭 충전(140)을 위한 하나와 메탈 레벨들 사이를 위한 다른 하나(150)인 두개의 다른 저 유전 상수 절연체들을 갖는 인터메탈 레벨 유전체에 관한 것이다.
본 발명의 양호한 실시예는 갭 충전 저 유전 상수 절연체로서의 HSQ(140) 및 메탈 레벨 사이(between) 저 유전 상수 절연체로서의 불소첨가 실리콘 산화물(150)을 포함한다.

Description

직접 회로 절연체 및 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1a-e도는 제1양호한 실시예 및 방법의 단계들을 도시한 횡단면도.

Claims (3)

  1. 집적 회로 인터레벨 절연 구조에 있어서, (a) 제1도전체에 인접하고 최대 약 3.7의 유전 상수를 갖는 제1유전 재료로 이루어진 제1절연체 영역, 및 (b) 상기 제1절연체 영역과 상기 제1도전체 위에 및 제2도전체 아래에 위치하고, 상기 제1유전 재료와 다른 제2유전 재료로 이루어지며 약 3.7 미만의 유전 상수를 갖는 제2절연체 영역을 포함하는 것을 특징으로 하는 집적 회로 인터레벨 절연 구조.
  2. 제1항에 있어서, 상기 제1유전 재료는 상기 제2유전 재료의 유전 상수보다 작은 유전 상수를 갖는 것을 특징으로 하는 집적 회로 인터레벨 절연 구조.
  3. 제1항에 있어서, 상기 제1영역 및 상기 제2영역 사이에 세퍼레이(separator)층을 더 포함하는 것을 특징으로 하는 집적 회로 인터레벨 절연 구조.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019970016238A 1996-04-29 1997-04-29 집적회로절연체및그제조방법 KR100518988B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US1640396P 1996-04-29 1996-04-29
US60/016,403 1996-04-29

Publications (2)

Publication Number Publication Date
KR970072310A true KR970072310A (ko) 1997-11-07
KR100518988B1 KR100518988B1 (ko) 2005-12-01

Family

ID=21776953

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970016238A KR100518988B1 (ko) 1996-04-29 1997-04-29 집적회로절연체및그제조방법

Country Status (4)

Country Link
EP (1) EP0805491A3 (ko)
JP (1) JPH1041382A (ko)
KR (1) KR100518988B1 (ko)
TW (1) TW391048B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3159093B2 (ja) * 1996-12-25 2001-04-23 日本電気株式会社 半導体装置およびその製造方法
JPH10189723A (ja) * 1996-12-25 1998-07-21 Nec Corp 半導体装置およびその製造方法
US6770975B2 (en) * 1999-06-09 2004-08-03 Alliedsignal Inc. Integrated circuits with multiple low dielectric-constant inter-metal dielectrics
US6391795B1 (en) * 1999-10-22 2002-05-21 Lsi Logic Corporation Low k dielectric composite layer for intergrated circuit structure which provides void-free low k dielectric material between metal lines while mitigating via poisoning
KR100326814B1 (ko) * 1999-12-30 2002-03-04 박종섭 반도체 소자의 금속배선간 층간 절연막 형성방법
JP4752108B2 (ja) 2000-12-08 2011-08-17 ソニー株式会社 半導体装置およびその製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5565384A (en) * 1994-04-28 1996-10-15 Texas Instruments Inc Self-aligned via using low permittivity dielectric
US5476817A (en) * 1994-05-31 1995-12-19 Texas Instruments Incorporated Method of making reliable metal leads in high speed LSI semiconductors using both dummy leads and thermoconductive layers
JPH08162528A (ja) * 1994-10-03 1996-06-21 Sony Corp 半導体装置の層間絶縁膜構造

Also Published As

Publication number Publication date
JPH1041382A (ja) 1998-02-13
EP0805491A3 (en) 1997-11-12
KR100518988B1 (ko) 2005-12-01
TW391048B (en) 2000-05-21
EP0805491A2 (en) 1997-11-05

Similar Documents

Publication Publication Date Title
TW360916B (en) Semiconductor device and fabrication process thereof
MY127478A (en) Fluorine barrier layer between conductor and insulator for degradation prevention
KR930009017A (ko) 필드시일드분리구조의 반도체장치 및 그 제조방법
RU2145458C1 (ru) Экранированная воздушная линия электропередачи высокого напряжения
KR960008958A (ko) 전계 방출 장치 아크-억제기
US6342722B1 (en) Integrated circuit having air gaps between dielectric and conducting lines
KR970072310A (ko) 집적 회로 절연체 및 방법
KR840002162A (ko) 반도체 장치(半導體裝置)
JPS5866213A (ja) 絶緑体
KR900017154A (ko) 반도체 장치
KR910008861A (ko) 집적회로소자
KR970072325A (ko) 반도체 장치 및 그 제조 방법
JP3253844B2 (ja) ガス遮断器
US1563946A (en) High-tension terminal
SE9704378D0 (sv) Transformator/reaktor samt förfarande vid tillverkning
JPH0530626A (ja) 複合絶縁方式母線
US2191152A (en) Electrical insulator
KR960026882A (ko) 집적 회로 및 그 제조방법
JPS6036981Y2 (ja) ガス絶縁機器の粒子捕捉器
JPH11144573A (ja) 絶縁機器
JPH0715843A (ja) ガス絶縁電気機器
JPH0620530A (ja) 耐水トリー性ケーブル
Singh et al. Full size and prototype cable performance of various insulants
JPS589476Y2 (ja) 油入管路母線
US2061412A (en) Insulator

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120830

Year of fee payment: 8

FPAY Annual fee payment

Payment date: 20130830

Year of fee payment: 9

FPAY Annual fee payment

Payment date: 20140828

Year of fee payment: 10

FPAY Annual fee payment

Payment date: 20160629

Year of fee payment: 12

EXPY Expiration of term