KR970054572A - 애벌란치 광 다이오드형 장파장 광검출기 - Google Patents

애벌란치 광 다이오드형 장파장 광검출기 Download PDF

Info

Publication number
KR970054572A
KR970054572A KR1019950052696A KR19950052696A KR970054572A KR 970054572 A KR970054572 A KR 970054572A KR 1019950052696 A KR1019950052696 A KR 1019950052696A KR 19950052696 A KR19950052696 A KR 19950052696A KR 970054572 A KR970054572 A KR 970054572A
Authority
KR
South Korea
Prior art keywords
avalanche photodiode
inp
wavelength
long
photodetector
Prior art date
Application number
KR1019950052696A
Other languages
English (en)
Other versions
KR100198423B1 (ko
Inventor
남은수
박찬용
김홍만
Original Assignee
양승택
한국전자통신연구원
이준
한국전기통신공사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 양승택, 한국전자통신연구원, 이준, 한국전기통신공사 filed Critical 양승택
Priority to KR1019950052696A priority Critical patent/KR100198423B1/ko
Publication of KR970054572A publication Critical patent/KR970054572A/ko
Application granted granted Critical
Publication of KR100198423B1 publication Critical patent/KR100198423B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L31/03046—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Light Receiving Elements (AREA)

Abstract

본 발명은 애벌란치 광 다이오드형 장파장 광검출기에 관한 것으로서, 그 특징은 애벌란치 광 다이오드형 장파장 광검출기에 있어서, InP보다 에너지 밴드갭이 크고 InP에 격자정합이 되는 In0.52Al0.48As에 PN 접합을 형성시켜 항복전압을 크게하고 터널링에 의한 누설전류를 줄인 데에 있으므로, 본 발명은 에너지 밴드갭이 큰 In0.52Al0.48As에 PN접합을 형성함으로써 높은 항복전압을 갖고 그 결과 낮은 전압에서의 에지 브레이크 다운을 피할 수 있어서 고성능의 APD형 광검출기 제작이 가능해지며, 기존의 통신용 장파장 InP광검출기의 경우에는 InP에 PN 접합을 형성하여 증폭시키고 있는 반면에 새로 고안된 광검출기에서는 밴드갭이 InP보다 큰 In0.52Al0.48As에 PN 접합을 형성시켜 줌으로써 애벌란치 현상에 의한 항복전압이 InP에 PN접합을 형성한 경우 보다 1.2배 정도 증가하여 최대 동작전압이 커지고 이로 인해서 안정되고 고감도의 동작특성을 얻을 수 있다는 데에 그 효과가 있다.

Description

애벌랜치 광 다이오드형 장파장 광검출기
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명에 따른 항복전압이 크고 누설전류가 적은 APD형 장파장 광검출기의 구조도.

Claims (5)

  1. 애벌란치 광 다이오드형 장파장 광검출기에 있어서, InP보다 에너지 밴드갭이 크고 InP에 격자정합이 되는 In0.52Al0.48As에 PN접합을 형성시켜 항복전압을 크게하고 터널링에 의한 누설전류를 줄인 것을 특징으로 하는 애벌란치 광 다이오드 장파장 광검출기.
  2. 애벌란치 광 다이오드 장파장 광검출기에 있어서, 에너지 밴드갭이 작은 InGaAsP층을 바깥에 노출시켜, 에너지 밴드갭이 InGaAsP보다 크고 InP에 격자정합이 되는 In0.52Al0.48As를 창문층으로 사용함으로써 표면누설전류를 줄인 것을 특징으로 하는 애벌란치 광 다이오드 장파장 광검출기.
  3. 애벌란치 광 다이오드 장파장 광검출기에 있어서, 에너지 밴드갭이 작은 InGaAs층을 바깥에 노출시켜, 에너지 밴드갭이 InGaAs보다 크고 InP에 격자정합이 되는 In0.52Al0.48As를 창문층으로 사용함으로써 표면누설전류를 줄인 것을 특징으로 하는 애벌란치 광 다이오드 장파장 광검출기.
  4. 애벌란치 광 다이오드 장파장 광검출기에 있어서, 터널링에 누설전류를 줄여주기 위하여 In0.53Ga0.47As 흡수층에 걸리는 전장의 세기를 줄인 것을 특징으로 하는 애벌란치 광 다이오드 장파장 광검출기.
  5. 애벌란치 광 다이오드 장파장 광검출기에 있어서, PN접합이 일어나는 In0.52Al0.48As와 빛의 흡수가 일어나는 In0.53Ga0.47As층 사이에 적절히 p형으로 도핑되고; 밴드갭이 In0.52Al0.48As와 In0.53Ga0.47As의 중간이 되는 In0.72Ga0.28As0.61P0.39를 넣어서 In0.53Ga0.47As층에 가해지는 전장의 세기를 줄여주는 동시에 밴드갭 차이로 인해서 발생하는 이동전하가 이질접합에 포획지 않도록 한 것을 특징으로 하는 애벌란치 광 다이오드 장파장 광검출기.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950052696A 1995-12-20 1995-12-20 애벌란치 광 다이오드형 장파장 광검출기 KR100198423B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950052696A KR100198423B1 (ko) 1995-12-20 1995-12-20 애벌란치 광 다이오드형 장파장 광검출기

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950052696A KR100198423B1 (ko) 1995-12-20 1995-12-20 애벌란치 광 다이오드형 장파장 광검출기

Publications (2)

Publication Number Publication Date
KR970054572A true KR970054572A (ko) 1997-07-31
KR100198423B1 KR100198423B1 (ko) 1999-06-15

Family

ID=19441871

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950052696A KR100198423B1 (ko) 1995-12-20 1995-12-20 애벌란치 광 다이오드형 장파장 광검출기

Country Status (1)

Country Link
KR (1) KR100198423B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100352816B1 (ko) * 2000-03-10 2002-09-16 광주과학기술원 초고속 광검출기용 에피택시얼 구조

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100352816B1 (ko) * 2000-03-10 2002-09-16 광주과학기술원 초고속 광검출기용 에피택시얼 구조

Also Published As

Publication number Publication date
KR100198423B1 (ko) 1999-06-15

Similar Documents

Publication Publication Date Title
CN100576576C (zh) 埋入波导型受光元件
KR850008558A (ko) 애벌란시 광전 다이오우드의 제조방법 및 애벌란시 광전 다이오우드
US4390889A (en) Photodiode having an InGaAs layer with an adjacent InGaAsP p-n junction
CN110197859B (zh) 一种工作在可见光波段的高带宽cmos apd光电器件
CN113838940B (zh) 一种集成型光电探测器及其制作方法
JP2004031707A (ja) アバランシ・フォトダイオード
US20140042584A1 (en) Uni-travelling-carrier photodiode
CN111180547B (zh) 一种新型两端光栅压结构SiC光探测器及其制备方法
KR970054572A (ko) 애벌란치 광 다이오드형 장파장 광검출기
CN109904274B (zh) 一种锗硅光电探测器
JPS5718372A (en) Semiconductor photoreceiving element
JPS61170079A (ja) 半導体受光素子
JPS61229371A (ja) フオトダイオ−ド
Yang et al. Properties of GaAs/InGaAs quantum well solar cells under low concentration operation
SE7510418L (sv) Fotodioddetektor samt sett for dess tillverkning
JP3739273B2 (ja) 半導体光検出器
JPH02246380A (ja) ホトダイオード
Napiah et al. Wavelength dependence of silicon avalanche photodiode fabricated by CMOS process
JPS60198786A (ja) 半導体受光素子
JPH057014A (ja) アバランシエフオトダイオード
JPS6244827B2 (ko)
Liu et al. Very high gain and low noise GaAsSb/AlGaAsSb avalanche photodiodes for 1550nm detection at room temperature
JPS60105281A (ja) 半導体受光装置
JPS5683979A (en) Light-receiving element
CN111129203A (zh) 一种高带宽cmos apd器件

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20040302

Year of fee payment: 6

LAPS Lapse due to unpaid annual fee