KR970052634A - How to remove etch residue - Google Patents

How to remove etch residue Download PDF

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Publication number
KR970052634A
KR970052634A KR1019950049983A KR19950049983A KR970052634A KR 970052634 A KR970052634 A KR 970052634A KR 1019950049983 A KR1019950049983 A KR 1019950049983A KR 19950049983 A KR19950049983 A KR 19950049983A KR 970052634 A KR970052634 A KR 970052634A
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KR
South Korea
Prior art keywords
dry etching
wiring
residues
plasma
etching process
Prior art date
Application number
KR1019950049983A
Other languages
Korean (ko)
Inventor
최상준
Original Assignee
문정환
Lg 반도체(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, Lg 반도체(주) filed Critical 문정환
Priority to KR1019950049983A priority Critical patent/KR970052634A/en
Publication of KR970052634A publication Critical patent/KR970052634A/en

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 식각 잔류물 제거방법에 관한 것으로, 배선공정후에도 잔류물이 남지 않기 때문에 소자의 안정성 및 신뢰성을 확보할 수 있으며, 제조공정의 수율을 높이도록 한 식각 잔류물 제거방법에 관한 것이다. 종래의 기술에서는 배선공정의 작업이 완료된 후에도 잔류물이 남아 있게 된다. 이러한 잔류물은 배선들간의 쇼트(short)등을 유발하여 소자의 성능과 제조공정의 수율을 감소시키는 문제점이 있는 바, 본 발명에서는 A1과 베리어 메탈과 아크메탈을 사용하여 배선막을 증착하는 배선막 증착공정 및 광노광 공정과, 배선막을 제거하는 건식식각공정과, 상기 공정중 베리어 메탈 및 아크메탈에 의해 발생하는 잔류물을 제거하는 O2/불소탄화물의 플라즈마를 사용하는 건식식각공정과, 감광막을 제거하는 O2플라즈마 건식식각공정과, 세정공정을 단계적으로 수행함으로써 배선공정후에도 잔류물이 남지 않기 때문에 소자의 안정성 및 신뢰성을 확보할 수 있으며, 제조공정의 수율을 높이도록 하였다.The present invention relates to a method for removing etch residues and to a method for removing etch residues to ensure the stability and reliability of the device since no residues remain after the wiring process and to increase the yield of the manufacturing process. In the prior art, residues remain even after the work of the wiring process is completed. Such residues cause shorts between the wires and reduce the performance of the device and the yield of the manufacturing process. In the present invention, a wiring film for depositing a wiring film using A1, barrier metal, and arc metal is used. A deposition process and a photoexposure process, a dry etching process for removing the wiring film, a dry etching process using a plasma of O 2 / fluoride carbide to remove residues generated by the barrier metal and arc metal, and a photoresist film By performing the O 2 plasma dry etching step and the cleaning step stepwise to remove the residue, no residue remains after the wiring step, thereby ensuring the stability and reliability of the device and increasing the yield of the manufacturing step.

Description

식각 잔류물 제거방법How to remove etch residue

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제4도는 본 발명에 의한 불소탄화물 가스를 사용하여 잔류물을 제거한 경우를 나타내는 배선의 확대 현미경사진.4 is an enlarged photomicrograph of a wiring diagram showing a case where a residue is removed using the fluoride carbide gas according to the present invention.

Claims (3)

A1과 베리어 메탈과 아크메탈을 사용하여 배선막을 증착하는 배선막 증착공정 및 광노광 공정과, 배선막을 제거하는 건식식각공정과, 상기 공정중 베리어 메탈 및 아크메탈에 의해 발생하는 잔류물을 제거하는 O2/불소탄화물의 플라즈마를 사용하는 건식식각공정과, 감광막을 제거하는 O2플라즈마 건식식각공정과, 세정공정을 단계적으로 수행함을 특징으로 하는 식각 잔류물 제거방법.A wiring film deposition process and a photoexposure process for depositing a wiring film using A1, a barrier metal and an arc metal, a dry etching process for removing the wiring film, and removing residues generated by the barrier metal and the arc metal during the process. A dry etching process using a plasma of O 2 / fluorofluoride, an O 2 plasma dry etching process for removing a photoresist film, and a cleaning step are performed step by step. 제1항에 있어서, 상기 O2/불소탄화물의 플라즈마를 사용하는 건식식각공정중 불소탄화물가스는 CF4인 것을 특징으로 하는 식각 잔류물 제거방법.The method of claim 1, wherein the fluorine carbide gas during the dry etching process using the plasma of the O 2 / fluoride carbide is CF 4 characterized in that the etching residue. 제1항에 있어서, 상기 O2/불소탄화물의 플라즈마를 사용하는 건식식각공정중 불소탄화물가스는 CHF4인 것을 특징으로 하는 식각 잔류물 제거방법.The method of claim 1, wherein the fluorine carbide gas is CHF 4 during the dry etching process using the plasma of the O 2 / fluoride carbide. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950049983A 1995-12-14 1995-12-14 How to remove etch residue KR970052634A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950049983A KR970052634A (en) 1995-12-14 1995-12-14 How to remove etch residue

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950049983A KR970052634A (en) 1995-12-14 1995-12-14 How to remove etch residue

Publications (1)

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KR970052634A true KR970052634A (en) 1997-07-29

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KR1019950049983A KR970052634A (en) 1995-12-14 1995-12-14 How to remove etch residue

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464660B1 (en) * 1997-10-29 2005-04-06 매그나칩 반도체 유한회사 Etch byproduct removal method of semiconductor device
KR100564415B1 (en) * 1998-10-29 2006-06-21 주식회사 하이닉스반도체 Contact hole formation method of semiconductor device
KR100741921B1 (en) * 2005-12-29 2007-07-24 동부일렉트로닉스 주식회사 Method of Etching Metal Layer in Semiconductor Device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464660B1 (en) * 1997-10-29 2005-04-06 매그나칩 반도체 유한회사 Etch byproduct removal method of semiconductor device
KR100564415B1 (en) * 1998-10-29 2006-06-21 주식회사 하이닉스반도체 Contact hole formation method of semiconductor device
KR100741921B1 (en) * 2005-12-29 2007-07-24 동부일렉트로닉스 주식회사 Method of Etching Metal Layer in Semiconductor Device

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