KR970052634A - How to remove etch residue - Google Patents
How to remove etch residue Download PDFInfo
- Publication number
- KR970052634A KR970052634A KR1019950049983A KR19950049983A KR970052634A KR 970052634 A KR970052634 A KR 970052634A KR 1019950049983 A KR1019950049983 A KR 1019950049983A KR 19950049983 A KR19950049983 A KR 19950049983A KR 970052634 A KR970052634 A KR 970052634A
- Authority
- KR
- South Korea
- Prior art keywords
- dry etching
- wiring
- residues
- plasma
- etching process
- Prior art date
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- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 식각 잔류물 제거방법에 관한 것으로, 배선공정후에도 잔류물이 남지 않기 때문에 소자의 안정성 및 신뢰성을 확보할 수 있으며, 제조공정의 수율을 높이도록 한 식각 잔류물 제거방법에 관한 것이다. 종래의 기술에서는 배선공정의 작업이 완료된 후에도 잔류물이 남아 있게 된다. 이러한 잔류물은 배선들간의 쇼트(short)등을 유발하여 소자의 성능과 제조공정의 수율을 감소시키는 문제점이 있는 바, 본 발명에서는 A1과 베리어 메탈과 아크메탈을 사용하여 배선막을 증착하는 배선막 증착공정 및 광노광 공정과, 배선막을 제거하는 건식식각공정과, 상기 공정중 베리어 메탈 및 아크메탈에 의해 발생하는 잔류물을 제거하는 O2/불소탄화물의 플라즈마를 사용하는 건식식각공정과, 감광막을 제거하는 O2플라즈마 건식식각공정과, 세정공정을 단계적으로 수행함으로써 배선공정후에도 잔류물이 남지 않기 때문에 소자의 안정성 및 신뢰성을 확보할 수 있으며, 제조공정의 수율을 높이도록 하였다.The present invention relates to a method for removing etch residues and to a method for removing etch residues to ensure the stability and reliability of the device since no residues remain after the wiring process and to increase the yield of the manufacturing process. In the prior art, residues remain even after the work of the wiring process is completed. Such residues cause shorts between the wires and reduce the performance of the device and the yield of the manufacturing process. In the present invention, a wiring film for depositing a wiring film using A1, barrier metal, and arc metal is used. A deposition process and a photoexposure process, a dry etching process for removing the wiring film, a dry etching process using a plasma of O 2 / fluoride carbide to remove residues generated by the barrier metal and arc metal, and a photoresist film By performing the O 2 plasma dry etching step and the cleaning step stepwise to remove the residue, no residue remains after the wiring step, thereby ensuring the stability and reliability of the device and increasing the yield of the manufacturing step.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제4도는 본 발명에 의한 불소탄화물 가스를 사용하여 잔류물을 제거한 경우를 나타내는 배선의 확대 현미경사진.4 is an enlarged photomicrograph of a wiring diagram showing a case where a residue is removed using the fluoride carbide gas according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950049983A KR970052634A (en) | 1995-12-14 | 1995-12-14 | How to remove etch residue |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950049983A KR970052634A (en) | 1995-12-14 | 1995-12-14 | How to remove etch residue |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052634A true KR970052634A (en) | 1997-07-29 |
Family
ID=66594114
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950049983A KR970052634A (en) | 1995-12-14 | 1995-12-14 | How to remove etch residue |
Country Status (1)
Country | Link |
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KR (1) | KR970052634A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100464660B1 (en) * | 1997-10-29 | 2005-04-06 | 매그나칩 반도체 유한회사 | Etch byproduct removal method of semiconductor device |
KR100564415B1 (en) * | 1998-10-29 | 2006-06-21 | 주식회사 하이닉스반도체 | Contact hole formation method of semiconductor device |
KR100741921B1 (en) * | 2005-12-29 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Method of Etching Metal Layer in Semiconductor Device |
-
1995
- 1995-12-14 KR KR1019950049983A patent/KR970052634A/en not_active Application Discontinuation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100464660B1 (en) * | 1997-10-29 | 2005-04-06 | 매그나칩 반도체 유한회사 | Etch byproduct removal method of semiconductor device |
KR100564415B1 (en) * | 1998-10-29 | 2006-06-21 | 주식회사 하이닉스반도체 | Contact hole formation method of semiconductor device |
KR100741921B1 (en) * | 2005-12-29 | 2007-07-24 | 동부일렉트로닉스 주식회사 | Method of Etching Metal Layer in Semiconductor Device |
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E902 | Notification of reason for refusal | ||
E601 | Decision to refuse application |