KR970052341A - 반도체소자 제조방법 - Google Patents

반도체소자 제조방법 Download PDF

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Publication number
KR970052341A
KR970052341A KR1019950055930A KR19950055930A KR970052341A KR 970052341 A KR970052341 A KR 970052341A KR 1019950055930 A KR1019950055930 A KR 1019950055930A KR 19950055930 A KR19950055930 A KR 19950055930A KR 970052341 A KR970052341 A KR 970052341A
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KR
South Korea
Prior art keywords
interlayer insulating
insulating film
contact hole
forming
semiconductor device
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Application number
KR1019950055930A
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English (en)
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KR100204009B1 (ko
Inventor
황준
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950055930A priority Critical patent/KR100204009B1/ko
Publication of KR970052341A publication Critical patent/KR970052341A/ko
Application granted granted Critical
Publication of KR100204009B1 publication Critical patent/KR100204009B1/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체소자의 제조방법에 관한 것으로, 낮은 온도에서의 리플로우 방법에 관한 것이다.
본 발명은 반도체 기판상에 층간절연막을 형성하는 단계와, 상기층간절연막을 선택적으로 식각하여 콘택홀을 형성하는 단계, 낮은 에너지의 아르곤 플라즈마를 조사하고 비교적 낮은 온도에서 어닐링 공정을 행하여 상기 층간절연막을 플로우시키는 단계, 및 상기 콘택홀을 포함한 층간절연막 전면에 금속을 증착하는 단계를 포함하는 반도체소자 제조방법을 제공한다.

Description

반도체소자 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 의한 반도체소자 제조방법을 도시한 공정 순서도

Claims (4)

  1. 반도체기판상에 층간절연막을 형성하는 단계와, 상기 층간절연막을 선택적으로 식각하여 콘택홀을 형성하는 단계,
    낮은 에너지의 아르곤 플라즈마를 조사하고 비교적 낮은 온도에서 어닐링 공정을 행하여 상기 층간절연막을 플로우시키는 단계, 및 상기 콘택홀을 포함한 층간절연막 전면에 금속을 증착하는 단계를 포함하는 것을 특징으로 하는 반도체소자 제조방법.
  2. 제1항에 있어서, 상기 층간절연막은 BPSG, PSG 및 BSG 중에서 선택된 어느 하나로 형성하는 것을 특징으로 하는 반도체소자 제조방법.
  3. 제1항에 있어서, 상기 아르곤플라즈마는 300-450℃의 온도에서 30-90분 동안 5-15eV정도의 에너지로 조사하는 것을 특징으로하는 반도체소자 제조방법.
  4. 제1항에 있어서, 상기 어닐링공정은 300 - 450℃의 온도에서 행하는 것을 특징으로 하는 반도체소자 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950055930A 1995-12-23 1995-12-23 반도체소자 제조방법 KR100204009B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950055930A KR100204009B1 (ko) 1995-12-23 1995-12-23 반도체소자 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950055930A KR100204009B1 (ko) 1995-12-23 1995-12-23 반도체소자 제조방법

Publications (2)

Publication Number Publication Date
KR970052341A true KR970052341A (ko) 1997-07-29
KR100204009B1 KR100204009B1 (ko) 1999-06-15

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ID=19444105

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950055930A KR100204009B1 (ko) 1995-12-23 1995-12-23 반도체소자 제조방법

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411144B1 (ko) * 2002-02-26 2003-12-24 서울대학교 공과대학 교육연구재단 아르곤-수소 플라즈마를 이용한 무플럭스 솔더 범프의 리플로우 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100411144B1 (ko) * 2002-02-26 2003-12-24 서울대학교 공과대학 교육연구재단 아르곤-수소 플라즈마를 이용한 무플럭스 솔더 범프의 리플로우 방법

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Publication number Publication date
KR100204009B1 (ko) 1999-06-15

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