KR970033805A - 실리카상의 골드 미러 및 골드 미러 제조방법 - Google Patents
실리카상의 골드 미러 및 골드 미러 제조방법 Download PDFInfo
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- KR970033805A KR970033805A KR1019950049788A KR19950049788A KR970033805A KR 970033805 A KR970033805 A KR 970033805A KR 1019950049788 A KR1019950049788 A KR 1019950049788A KR 19950049788 A KR19950049788 A KR 19950049788A KR 970033805 A KR970033805 A KR 970033805A
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Abstract
골드는 실리카상의 적외선 분광 감지 미러에 사용하기에 유용한 금속이다. 그러나, 골드는 실리카에 부착이 잘되지 않는다. 부착력은 SnF2를 갖는 표면을 민감하게 만들어서 PdCl2/HCI로 활성화시킨 후 실리카 표면상에 광학적으로 얇은 Ni-P의 글루층을 침착시킴으로써 향상된다. Ni-P층은 실리카의 표면에 골드의 부착력을 향상시키기에 충분한 두께로 침착되지만 적외선 방사선이 골드 층으로 또는 골드 층으로부터 통과되는 것을 차단하기에는 불충분하다. Ni-P 두께의 한 측정은 분광광도계에 의해 측정될 때 550nm에서 0.008(850nm에서 0.003보다큼) 보다 큰 글루층의 흡수율이다. 이러한 부착층상에 전자 빔 침착에 의해 침착되는100-150nm두께의 골드 층은 통상적으로 사용되는 "스카치 테이프 부착테스트"를 통과하기에 충분할 만큼 잘 부착된다. 광 손실이 거의 없이 골드를 실리카에 부착시킬 수 있는 능력은 광섬유 또는 도파란과 같은 반사면의 사용을 필요로 하는 광파 디바이스를 제조하는데 매우 유용하다.
Description
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Claims (14)
- 실리카 아티클의 표면상의 얇은 금속층과, 상기 금속층상에 골드 층을 포함하는 실리카상의 골드 미러에 있어서, 상기 금속은 실리카 및 골드 모두에 부착되고, 골드 층을 실리카 표면에 부착시키기에는 충분하지만, 상기 골드층의 표면으로부터의 방사선 통과를 차단하는 장벽으로서 작용하기에는 불충분한 두께인 니켈을 포함하는 실리카상의 골드 미러.
- 제1항에 있어서, 상기 금속은 니겔과 인의 합금(Ni-P)인 실리카상의 골드 미러.
- 제2항에 있어서, 상기 Ni-P 합금이 Pd황성 실리카 표면상에 침착되고, 상기 금속은 Pd/Ni-P층을 포함하는 실리카상의 골드 미러.
- 제3항에 있어서, Pd/Ni-P층의 두께는 분광광도계에 의해 측정될 때 550nm에서 0.008에서 0.030 범위의 흡수율을 갖는 두께로 침착되는 실리카상의 골드 미러.
- 제1항에 있어서, 상기 실리카 표면은 광섬유의 단부 표면인 실리카상의 골드 미러.
- 제5항에 있어서, 상기 단부표면은 수평에 대해 약 45°로 경사지는 실리카상의 골드 미러.
- 실리카 아티클의 표면상에 골드 미러를 제조하는 방법에 있어서, 상기 표면을 SnF2의 수용성 감광 용액내에 침적시키는 단계와; 상기 감광화된 표면을 탈이온화된 물에서 린스시키는 단계와; 상기 표면을 PdCI2및 HCI의 수용성 활성 용액내에 침적시키는 단계와; 상기 활성화된 표면상에 니켈을 포함하는 얇은 막의 금속을 침착시키기에 충분한 기간동안 상기 활성화된 용액을 무전극 니켈 도금 용액내에 침적시키고, 상기 금속은 상기 실리카 아티클의 상기 표면에 골드를 부착시키기에는 충분 하지만 상기 골드 층의 인접한 표면으로 방사선이 통과하는 것을 차단하기 위한 장벽으로서 작용하기에는 불충분한 두께로 침착되는 상기 침적 단계와; 상기 금속으로 도금된 표면을 탈이온화된 물에서 린스시키고 건조시키는 단계와; 상기 금속으로 도금된 표면상에 얇은 골드 층을 침착시키고, 상기 골드는 이 표면상에 충돌하는 방사선을 반사하는데 충분한 두께로 침착되는 상기 침착 단계를 포함하는 골드 미러 제조방법.
- 제7항에 있어서, 상기 니켈을 포함하는 층은 Pd/Ni-P 금속층을 형성하는 Ni-P합금으로서 Pd-활성 표면상에 침착되는 골드 미러 제조방법.
- 제8항에 있어서, 상기 Pd/Ni-P층은 분광광도계에 의해 550nm에서 측정될때 0.008에서 0.030범위의 흡수율을 갖는 두께로 침착되는 골드 미러 제조방법.
- 제7항에 있어서, 상기 골드 층은 100에서 150nm 범위의 두께로 침착되는 골드 미러 제조방법.
- 제7항에 있어서, 상기 골드 층의 두께는120nm인 골드미러 제조방법.
- 제7항에 있어서, 상기 골드 층은 입자 침착에 의해 침착되는 골드 미러 제조방법.
- 제12항에 있어서, 상기 입자 침착은 전자 빔 침착인 골드 미러 제조방법.
- 제12항에 있어서, 상기 입자 침착은 스퍼터링인 골드 미러 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
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US35682394A | 1994-12-15 | 1994-12-15 | |
US08/356,823 | 1994-12-15 |
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KR970033805A true KR970033805A (ko) | 1997-07-22 |
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KR1019950049788A KR970033805A (ko) | 1994-12-15 | 1995-12-14 | 실리카상의 골드 미러 및 골드 미러 제조방법 |
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US (2) | US5864425A (ko) |
EP (1) | EP0717293B1 (ko) |
JP (1) | JP3280217B2 (ko) |
KR (1) | KR970033805A (ko) |
CA (1) | CA2153345C (ko) |
DE (1) | DE69522184T2 (ko) |
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CA2313438C (en) | 2000-07-06 | 2003-03-11 | B-Con Engineering Inc. | High quality optical surface and method of producing same |
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TWI227525B (en) * | 2002-04-12 | 2005-02-01 | Ritek Corp | Forming method of soldering metal layer for optical fiber array base |
DE10228145B4 (de) * | 2002-06-24 | 2008-07-03 | Nokia Siemens Networks Gmbh & Co.Kg | Verfahren und Vorrichtung zur Überwachung einer optischen Verbindung |
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EP2275564A1 (en) | 2009-07-17 | 2011-01-19 | Freie Universität Berlin | Means and method for the production of transgenic plants that are resistant to clubroot |
CN101963681B (zh) * | 2009-07-24 | 2012-06-20 | 清华大学 | 偏光元件 |
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US4180954A (en) * | 1978-04-10 | 1980-01-01 | Gell Harold A Jr | Radiation controlling reversible window |
EP0030792B1 (en) * | 1979-11-20 | 1983-09-21 | National Research Development Corporation | Infra red reflectors |
US4319264A (en) * | 1979-12-17 | 1982-03-09 | International Business Machines Corporation | Nickel-gold-nickel conductors for solid state devices |
EP0035906B2 (en) * | 1980-03-10 | 1989-11-08 | Teijin Limited | Selectively light-transmitting laminated structure |
JPS574004A (en) * | 1980-06-10 | 1982-01-09 | Fujitsu Ltd | Rotary polyhedral mirror |
US4451119A (en) * | 1981-04-02 | 1984-05-29 | Eastman Kodak Company | Composite mirror and method of construction |
JPS58149002A (ja) * | 1982-03-01 | 1983-09-05 | Matsushita Electric Ind Co Ltd | レ−ザ全反射鏡 |
JPS6080805A (ja) * | 1983-10-11 | 1985-05-08 | Takashi Mori | 人工光源装置 |
EP0163266A3 (en) * | 1984-05-26 | 1987-12-23 | Daijo Hashimoto | Optical fiber for lateral irradiation of laser beam |
JPS63249104A (ja) * | 1987-04-03 | 1988-10-17 | Mitsubishi Cable Ind Ltd | 耐熱性ミラ− |
JPH01309005A (ja) * | 1988-06-08 | 1989-12-13 | Sumitomo Electric Ind Ltd | レーザ反射鏡 |
US5237630A (en) * | 1991-09-20 | 1993-08-17 | Hogg Dayle W | Fiber optic device with reflector located at splice joint |
US5253312A (en) * | 1992-06-26 | 1993-10-12 | Cytocare, Inc. | Optical fiber tip for use in a laser delivery system and a method for forming same |
US5380559A (en) * | 1993-04-30 | 1995-01-10 | At&T Corp. | Electroless metallization of optical fiber for hermetic packaging |
-
1995
- 1995-07-06 CA CA002153345A patent/CA2153345C/en not_active Expired - Fee Related
- 1995-12-05 DE DE69522184T patent/DE69522184T2/de not_active Expired - Lifetime
- 1995-12-05 EP EP95308762A patent/EP0717293B1/en not_active Expired - Lifetime
- 1995-12-14 KR KR1019950049788A patent/KR970033805A/ko not_active Application Discontinuation
- 1995-12-14 JP JP32546495A patent/JP3280217B2/ja not_active Expired - Fee Related
-
1996
- 1996-09-18 US US08/715,134 patent/US5864425A/en not_active Expired - Lifetime
-
1997
- 1997-10-29 US US08/960,502 patent/US5892618A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0717293B1 (en) | 2001-08-16 |
CA2153345A1 (en) | 1996-06-16 |
CA2153345C (en) | 2000-01-11 |
EP0717293A1 (en) | 1996-06-19 |
DE69522184T2 (de) | 2002-04-18 |
JP3280217B2 (ja) | 2002-04-30 |
JPH08271707A (ja) | 1996-10-18 |
US5892618A (en) | 1999-04-06 |
DE69522184D1 (de) | 2001-09-20 |
US5864425A (en) | 1999-01-26 |
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WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |