KR970030815A - Capacitor Manufacturing Method of Semiconductor Device - Google Patents

Abstract

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a capacitor of a semiconductor device. The present invention provides a method of manufacturing a semiconductor memory device, in which a small amount of tungsten silicide is injected onto the amorphous silicon at low temperature and heat treated to increase the capacity of the capacitor per unit area. By forming a hemispherical silicon electrode, the surface area of the storage electrode is increased.

Description

Capacitor Manufacturing Method of Semiconductor Device

As this is a public information case, the full text was not included.

2A to 2D are cross-sectional views illustrating a method of manufacturing a capacitor of a semiconductor device in accordance with an embodiment of the present invention.

Claims (11)

Forming a MOS field effect transistor including a device isolation oxide film, a gate oxide film, a word line, and a source / drain on a silicon substrate, and forming a planarization insulating layer over the entire structure, and exposing the source / drain. Forming a contact hole, forming an amorphous silicon layer thereon, removing a natural oxide film formed on the surface of the amorphous silicon layer, and forming a tungsten silicide nucleus on the surface of the amorphous silicon layer; A method of manufacturing a capacitor of a semiconductor device comprising the step of forming a storage electrode having a hemispherical surface in the heat treatment process. The method of claim 1, wherein impurities of about 1 × 10 ¹⁷ / cm 2 to about 2 × 10 ²¹ / cm 2 are doped into the amorphous silicon layer. The method of claim 1, wherein the amorphous silicon layer is formed using SiH ₄ or Si ₂ H ₆ at a temperature of 450 to 550 ℃. The method of claim 1, wherein the removal of the natural oxide film is performed by wet etching with hydrogen fluoride. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein when removing said natural oxide film, a substance in a gaseous state in which hydrogen fluoride, deionized water and ozone are mixed is used. The method of claim 1, wherein the tungsten silicide core is formed by injecting a mixed gas of SiH ₂ Cl ₂ and WF ₆ to the surface of the amorphous silicon layer at a temperature of 530 to 560 ℃ and a pressure of 1 Torr or less. A method for producing a capacitor of a semiconductor device. The semiconductor device of claim 1, wherein the tungsten silicide nucleus is formed by spraying a mixed gas of SiH ₄ and WF ₆ on the surface of the amorphous silicon layer at a temperature of 450 ° C. or higher and a pressure of 1 Torr or less. Capacitor Manufacturing Method. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein the component ratio of tungsten and silicon in said tungsten silicide nucleus is 1: 1.5 to 2.5. The method of claim 1, wherein the heat treatment process for forming the storage electrode is performed at a temperature of 565 ° C. or higher. The semiconductor device according to claim 1, wherein in the heat treatment process for forming the storage electrode, the pressure in the tube is advanced to several hundred mTorr or less while flowing nitrogen, hydrogen, and argon gas over the entire surface. Of capacitor manufacturing method. The method of manufacturing a capacitor of a semiconductor device according to claim 1, wherein in the heat treatment step of forming the storage electrode, the pressure in the tube is set to several tens of mTorr without flowing gas. ※ Note: The disclosure is based on the initial application.