KR970052507A - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- KR970052507A KR970052507A KR1019950069550A KR19950069550A KR970052507A KR 970052507 A KR970052507 A KR 970052507A KR 1019950069550 A KR1019950069550 A KR 1019950069550A KR 19950069550 A KR19950069550 A KR 19950069550A KR 970052507 A KR970052507 A KR 970052507A
- Authority
- KR
- South Korea
- Prior art keywords
- polysilicon
- semiconductor device
- depositing
- manufacturing
- gas
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
본 발명은 반도체 소자의 제조방법에 관한 것으로, 보다 구체적으로는 반도체 소자의 콘택홀을 형성하고, 폴리실리콘을 형성하여 콘택을 이루는 공정시 미세한 콘택홀 내에 고르게 분포됨과 더불어 스텝 커버리지를 향상시킬 수 있는 반도체 소자의 제조방법에 관한 것으로, 반도체 소자의 스토리지 노드 전극 또는 비트 라인의 형성 공정시, 폴리실리콘의 스텝 커버리지를 향상시키기 위하여 표면이 거친 제1폴리실리콘을 형성하고, 불순물이 주입된 제2폴리실리콘을 형성한 다음, 표면이 평탄한 제3폴리실리콘을 순차적으로 형성하고, 이어서, 열처리 공정을 실시하므로써, 소자의 스텝 커버리지가 향상되고, 이로써, 소자의 질을 향상시킬 수 있다.The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to form stepped contact holes of a semiconductor device, to form polysilicon, and to evenly distribute the contact holes in the contact hole and to improve step coverage. A method of fabricating a semiconductor device, the method comprising: forming a coarse first polysilicon to improve step coverage of polysilicon in a process of forming a storage node electrode or a bit line of a semiconductor device, and injecting impurities into a second poly After silicon is formed, third polysilicon having a flat surface is sequentially formed, and then a heat treatment step is performed to improve the step coverage of the device, thereby improving the quality of the device.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2도는 본 발명에 따른 반도체 소자의 제조방법을 설명하기 위한 도면.2 is a view for explaining a method of manufacturing a semiconductor device according to the present invention.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950069550A KR970052507A (en) | 1995-12-30 | 1995-12-30 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950069550A KR970052507A (en) | 1995-12-30 | 1995-12-30 | Manufacturing method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052507A true KR970052507A (en) | 1997-07-29 |
Family
ID=66638720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950069550A KR970052507A (en) | 1995-12-30 | 1995-12-30 | Manufacturing method of semiconductor device |
Country Status (1)
Country | Link |
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KR (1) | KR970052507A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100728284B1 (en) * | 2006-09-07 | 2007-06-13 | 두산인프라코어 주식회사 | Ball screw device for preventing interference |
-
1995
- 1995-12-30 KR KR1019950069550A patent/KR970052507A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100728284B1 (en) * | 2006-09-07 | 2007-06-13 | 두산인프라코어 주식회사 | Ball screw device for preventing interference |
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