KR970018646A - 광학 장치 - Google Patents

광학 장치 Download PDF

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Publication number
KR970018646A
KR970018646A KR1019960039627A KR19960039627A KR970018646A KR 970018646 A KR970018646 A KR 970018646A KR 1019960039627 A KR1019960039627 A KR 1019960039627A KR 19960039627 A KR19960039627 A KR 19960039627A KR 970018646 A KR970018646 A KR 970018646A
Authority
KR
South Korea
Prior art keywords
light
optical device
light receiving
emitting portion
layer
Prior art date
Application number
KR1019960039627A
Other languages
English (en)
Other versions
KR100436199B1 (ko
Inventor
마사또 도이
가즈히꼬 네모또
Original Assignee
이데이 노부유끼
소니 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이데이 노부유끼, 소니 가부시끼가이샤 filed Critical 이데이 노부유끼
Publication of KR970018646A publication Critical patent/KR970018646A/ko
Application granted granted Critical
Publication of KR100436199B1 publication Critical patent/KR100436199B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/08—Disposition or mounting of heads or light sources relatively to record carriers
    • G11B7/09—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following
    • G11B7/0901—Disposition or mounting of heads or light sources relatively to record carriers with provision for moving the light beam or focus plane for the purpose of maintaining alignment of the light beam relative to the record carrier during transducing operation, e.g. to compensate for surface irregularities of the latter or for track following for track following only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/123—Integrated head arrangements, e.g. with source and detectors mounted on the same substrate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/13—Optical detectors therefor
    • G11B7/131—Arrangement of detectors in a multiple array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optical Head (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Recording Or Reproduction (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

광학 픽업 등의 광학 장치에서, 부품 개수의 삭감 및 광학적 배채 설정시의 얼라인먼트의 간단화를 가능하게 하고, 장치 전체의 간소화, 소형화 등을 도모하고, 또한 푸시풀법의 이점을 생기게 하여, 안정된 트래킹 서브를 가능하게 한다. 서로 근접하도록 발광부와 복수의 수광부가 동일 기판상에 적층되고, 발광부의 공진기 단면으로부터 출사한 광의 피조사부로부터의 공진기 단면을 향하는 복귀광을 복수의 수광부에 의해 공춧점 근방에서 수광 검출하는 광학 장치를 구성한다.

Description

광학 장치
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 광학 장치의 일 예의 사시도

Claims (8)

  1. 서로 근접하도록 발광부와 복수의 수광부가 동일 기판상에 적층되고, 상기 발광부의 공진기 단면으로부터 출사한 광의 피조사부(被照射部)로부터의 상기 공진기 단면을 향하는 복귀광을, 상기 복수의 수광부에 의해 공춧점(共點)근방에서 수광 검출하는 것을 특징으로 하는 광학 장치
  2. 제1항에 있어서, 상기 발광부의 단면에 대하여 경사지게 상기 수광부가 형성된 것을 특징으로 하는 광학 장치
  3. 제2항에 있어서, 상기 수광부의 전부 내지는 일부가(111) 또는 (110) 결정면에 의해 형성되어 이루어진 것을 특징으로 하는 광학 장치
  4. 제1항에 있어서, 상기 수광부에서 푸시풀법에 의한 신호 검출을 행하는 것을 특징으로 하는 광학 장치
  5. 제1항에 있어서, 상기 발광부와 상기 수광부 사이에 광흡수층이 설치되어 있는 것을 특징으로 하는 광학 장치
  6. 제1항에 있어서, 상기 발광부와 상기 수광부 사이에 전류 저지층이 설치되어 있는 것을 특징으로 하는 광학 장치
  7. 제1항에 있어서, 상기 발광부와 상기 수광부 사이에 광흡수 또한 전류 저지를 행하는 층이 설치되어 있는 것을 특징으로 하는 광학 장치
  8. 기판상에 제1 클래드층, 화성층 및 제2 클래드층이 순서대로 적층되고, 상기 제2 클래드층상에 복수의 수광소자가 더 적층되고, 상기 복수의 수광소자는 상기 활성층으로부터 출사하는 광의 공촛점 근방에 위치하고, 상기 복수의 수광 소자에게 트래킹 서보 신호를 검출하는 것을 특징으로 하는 광학 장치
KR1019960039627A 1995-09-13 1996-09-13 광학장치 KR100436199B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-235680 1995-09-13
JP23568095A JP3882210B2 (ja) 1995-09-13 1995-09-13 光学装置

Publications (2)

Publication Number Publication Date
KR970018646A true KR970018646A (ko) 1997-04-30
KR100436199B1 KR100436199B1 (ko) 2004-07-31

Family

ID=16989622

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960039627A KR100436199B1 (ko) 1995-09-13 1996-09-13 광학장치

Country Status (5)

Country Link
US (1) US5793790A (ko)
EP (1) EP0763821B1 (ko)
JP (1) JP3882210B2 (ko)
KR (1) KR100436199B1 (ko)
DE (1) DE69621538T2 (ko)

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US6256283B1 (en) * 1996-10-01 2001-07-03 Matsushita Electric Industrial Co., Ltd. Optical pickup having a common light beam path for passing either of a plurality of kinds of light beams
US6556533B1 (en) 1996-10-01 2003-04-29 Matsushita Electric Industrial Co., Ltd. Optical pickup device
US6222202B1 (en) * 1998-10-06 2001-04-24 Agilent Technologies, Inc. System and method for the monolithic integration of a light emitting device and a photodetector for low bias voltage operation
KR100360143B1 (ko) * 1999-02-08 2002-11-07 샤프 가부시키가이샤 반도체 레이저 소자 및 그의 제조방법
JP2001077457A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体レーザおよびその製造方法
KR100405940B1 (ko) * 2001-02-27 2003-12-18 한국과학기술연구원 수평결합형 레이저 다이오드
US6633716B2 (en) 2001-05-02 2003-10-14 Motorola, Inc. Optical device and method therefor
JP2002335032A (ja) * 2001-05-08 2002-11-22 Sony Corp 光学装置およびその製造方法
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US8154030B2 (en) * 2004-10-01 2012-04-10 Finisar Corporation Integrated diode in a silicon chip scale package
US20070064156A1 (en) * 2005-09-19 2007-03-22 Mediatek Inc. System and method for removing co-channel interference
JP4692272B2 (ja) * 2005-12-26 2011-06-01 ソニー株式会社 レーザ集積装置及び光ピックアップ装置
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US8325566B2 (en) * 2009-03-19 2012-12-04 Tdk Corporation Thermally-assisted magnetic recording head having a light source at least inclined from an opposed-to-medium surface
US8441895B2 (en) * 2009-11-20 2013-05-14 Tdk Corporation Thermally-assisted magnetic recording head with light detector in element-integration surface
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JP6201095B1 (ja) * 2016-04-27 2017-09-20 雫石　誠 撮像モジュール及び撮像装置
KR102523975B1 (ko) 2017-10-11 2023-04-20 삼성전자주식회사 광원 일체형 광 센싱 시스템 및 이를 포함하는 전자 기기
JP7206489B2 (ja) * 2019-03-07 2023-01-18 ミツミ電機株式会社 光学モジュール及び光学式エンコーダ
WO2022029841A1 (ja) * 2020-08-03 2022-02-10 株式会社京都セミコンダクター 受光素子ユニット

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Also Published As

Publication number Publication date
JP3882210B2 (ja) 2007-02-14
US5793790A (en) 1998-08-11
JPH0982936A (ja) 1997-03-28
DE69621538D1 (de) 2002-07-11
EP0763821B1 (en) 2002-06-05
KR100436199B1 (ko) 2004-07-31
DE69621538T2 (de) 2003-01-09
EP0763821A1 (en) 1997-03-19

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