KR970008639A - 3족 질화물 반도체 발광소자 - Google Patents

3족 질화물 반도체 발광소자 Download PDF

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Publication number
KR970008639A
KR970008639A KR1019960031755A KR19960031755A KR970008639A KR 970008639 A KR970008639 A KR 970008639A KR 1019960031755 A KR1019960031755 A KR 1019960031755A KR 19960031755 A KR19960031755 A KR 19960031755A KR 970008639 A KR970008639 A KR 970008639A
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South Korea
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layer
light
nitride semiconductor
emitting device
concentration
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KR1019960031755A
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English (en)
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KR100468320B1 (ko
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마사요시 고이케
신야 아사미
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도다 다다히데
도요다 고세 가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3213—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities asymmetric clading layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

본 발명의 목적은 3족 질화물 화합물 반도체를 이용한 자외선 발광 소자의 발광효율의 향상으로서 사파이어기판(1)위에 500Å의 AIN의 버퍼층(2) 차례로, 막두께 약 5.0㎛, 농도 5×1018/㎤의 실리콘 도프 GaN으로 구성되는 고 캐리어 농도 n+층(3), 막두께 약 5.0㎛, 농도 5×1017/㎤의 실리콘 도프 GaN으로 이루어지는 n층(4), 막두께 약 0.5㎛의 In0.07Ga0.93N으로 구성되는 발광층(5) 막두께 약 5.0㎛, 홀농도 5×1017/㎤의 농도 5×1020/㎤의에 마그네슘의 도프된 Al0.08Ga0.92N으로 구성되는 p층(61), 막두께 약 1㎛, 홀농도 7×1018/㎤ 마그네슘 농도 5×1021/㎤에 마그네슘 도프의 GaN으로 구성되는 콘택층(62)에 형성되어 있다. 그리고 콘택층(62)과 고캐리어 농도 n+층(3)에 접합하는 Ni로 구성되는 전극(7, 8)이 형성되어 있다.

Description

3족 질화물 반도체 발광소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 구체적인 실시예와 관계되는 발광다이오드의 구성을 나타낸 구성도.

Claims (5)

  1. p전도형의 p층과 n전도형의 n층으로 발광층을 낀 구조의 3족 질화물 반도체를 이용한 발광 소자에 있어서, 상기 발광층은 Alx1Gay1In1-x1-y, N반도체로 정공의 확산길이 보다 두껍게 구성하며; 상기 n층을 발광층과 격자 정수가 거의 같게되도록 도너 불순물이 첨가된 Alx2Gay2In1-x2-y2N반도체로 구성되며; 상기 p층을 발광층에 주입한 전자를 밀폐하는데 충분한 것으로 상기 발광층 보다도 금제대폭이 큰 억셉터 불순물이 첨가된 Alx3Gay3In1-x3-y3N반도체로 구성된 것을 특징으로 하는 3족 질화물 반도체 발광소자.
  2. 제1항에 있어서, 상기 발광층은 Gay2In1-y2N(0.92Y21)로 구성하며, 상기 n층을 도너 불순물이 첨가된 GaN으로 구성한 것을 특징으로 하는 3족 질화물 반도체 발광소자.
  3. 제2항에 있어서, 상기 n층에 접합하는 하층으로서 상기 n층 보다도 고농도로 도너 불순물이 첨가된 GaN으로 이루어지는 n+층을 마련한 것을 특징으로 하는 3족 질화물 반도체 발광소자.
  4. 제1항에 있어서, 상기 도너 불순물은 실리콘인 것을 특징으로 하는 3족 질화물 반도체 발광소자.
  5. 제1항에 있어서, 상기 발광층에는 실리콘이 첨가되어 있는 것을 특징으로 하는 3족 질화물 반도체 발광소자.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019960031755A 1995-07-24 1996-07-24 3족질화물반도체발광소자 KR100468320B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20918195A JP3564811B2 (ja) 1995-07-24 1995-07-24 ３族窒化物半導体発光素子
JP95-209181 1995-07-24

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KR970008639A true KR970008639A (ko) 1997-02-24
KR100468320B1 KR100468320B1 (ko) 2006-05-11

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US (2) US7045829B2 (ko)
JP (1) JP3564811B2 (ko)
KR (1) KR100468320B1 (ko)
TW (1) TW419832B (ko)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100506077B1 (ko) * 2000-04-15 2005-08-04 삼성전기주식회사 유기금속기상화학증착법에 의한 고품위 ⅲ-족 질화물 박막성장 방법
TWI266440B (en) * 2005-10-20 2006-11-11 Formosa Epitaxy Inc Light emitting diode chip
JP5511395B2 (ja) * 2010-01-06 2014-06-04 セイコーインスツル株式会社 半導体装置

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JPS59228776A (ja) 1983-06-10 1984-12-22 Nippon Telegr & Teleph Corp <Ntt> 半導体ヘテロ接合素子
JPH0614564B2 (ja) 1987-07-13 1994-02-23 日本電信電話株式会社 半導体発光素子
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JPH06101587B2 (ja) 1989-03-01 1994-12-12 日本電信電話株式会社 半導体発光素子
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US20030205718A1 (en) 2003-11-06
US7045829B2 (en) 2006-05-16
JP3564811B2 (ja) 2004-09-15
TW419832B (en) 2001-01-21
KR100468320B1 (ko) 2006-05-11
JPH0936421A (ja) 1997-02-07
US20030057433A1 (en) 2003-03-27

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