KR970008354A

KR970008354A - Manufacturing Method of Semiconductor Device Having Small Contact Hole

Info

Publication number: KR970008354A
Application number: KR1019950023171A
Authority: KR
Inventors: 이강현; 정홍식; 한민석
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-07-31
Filing date: 1995-07-31
Publication date: 1997-02-24

Abstract

폴리머를 이용한 작은 콘택홀을 갖는 반도체 장치의 제조방법에 관하여 개시한다. 본 발명은 반도체 기판상에 패터닝하고자 하는 소정의 층을 형성하는 단계와, 상기 소정의 층 상에 제1콘택홀을 갖는 포토레지스트 패턴을 형성하는 단계와, 상기 포토레지스트 패턴이 형성된 기판의 전면에 상기 포토레지스트 패턴의 소모없이 폴리머층을 형성하는 단계와, 상기 폴리머층을 건식식각하여 상기 포토레지스트 패턴을 측벽에 스페이서를 형성한 후, 상기 포토레지스트 패턴 및 스페이서를 마스크로 상기 소정의 층을 건식식각하여 상기 제1콘택홀보다 작은 제2콘택홀을 형성하는 단계를 포함한다. 본 발명에 의하면, 폴리머층을 이용하여 사진공정의 한계해상도 이하의 스몰 콘택홀을 형성할 수 있다.A method of manufacturing a semiconductor device having a small contact hole using a polymer is disclosed. The present invention provides a method for forming a predetermined layer on a semiconductor substrate, forming a photoresist pattern having a first contact hole on the predetermined layer, and forming a photoresist pattern on the entire surface of the substrate on which the photoresist pattern is formed. Forming a polymer layer without consuming the photoresist pattern, dry etching the polymer layer to form a spacer on a sidewall of the photoresist pattern, and then drying the predetermined layer using the photoresist pattern and the spacer as a mask. Etching to form a second contact hole smaller than the first contact hole. According to the present invention, a small contact hole of less than or equal to the limit resolution of the photographic process can be formed using the polymer layer.

Description

Manufacturing Method of Semiconductor Device Having Small Contact Hole

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2D도는 본 발명에 의한 스몰 콘택홀 형성방법을 나타낸 단면도들이다.2A to 2D are cross-sectional views illustrating a method for forming a small contact hole according to the present invention.

Claims

Forming a desired layer to be patterned on the semiconductor substrate; Forming a photoresist pattern having a first contact hole on the predetermined layer; Forming a polymer layer on the entire surface of the substrate on which the photoresist pattern is formed without exhausting the photoresist pattern; Dry etching the polymer layer to form a spacer on sidewalls of the photoresist pattern, and dry etching the predetermined layer using the photoresist pattern and the spacer as a mask to form a first contact hole that is smaller than the first contact hole. And forming the semiconductor device.

The method of manufacturing a semiconductor device according to claim 1, wherein the predetermined layer is an oxide film.

The method of claim 1, wherein the polymer layer is formed using CF ₄ gas and CHF ₃ gas.

The method of claim 1, wherein the size of the second contact hole is adjusted according to the thickness of the polymer layer.

The method of claim 1, wherein the dry etching of the polymer layer and the predetermined layer uses a reactive ion etching method.

Forming a desired layer to be patterned on the semiconductor substrate; Forming a photoresist pattern having a first contact hole on the predetermined layer; And forming a polymer layer on the entire surface of the substrate on which the photoresist pattern is formed without consuming the photoresist pattern, and subsequently sequentially dry etching the polymer layer and the predetermined layer to form a second contact hole smaller than the first contact hole. Forming a semiconductor device;

The method of claim 6, wherein the polymer layer is formed using CF ₄ gas and CHF ₃ gas.

The method of claim 6, wherein the size of the second contact hole is adjusted according to the thickness of the polymer layer.

The method of claim 6, wherein the dry etching of the polymer layer and the predetermined layer uses a reactive ion etching method.

※ Note: The disclosure is based on the initial application.