KR970013031A - Method of forming contact window of semiconductor device - Google Patents

Method of forming contact window of semiconductor device Download PDF

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Publication number
KR970013031A
KR970013031A KR1019950025719A KR19950025719A KR970013031A KR 970013031 A KR970013031 A KR 970013031A KR 1019950025719 A KR1019950025719 A KR 1019950025719A KR 19950025719 A KR19950025719 A KR 19950025719A KR 970013031 A KR970013031 A KR 970013031A
Authority
KR
South Korea
Prior art keywords
insulating layer
interlayer insulating
forming
contact window
semiconductor device
Prior art date
Application number
KR1019950025719A
Other languages
Korean (ko)
Inventor
김윤기
Original Assignee
김광호
삼성전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자주식회사 filed Critical 김광호
Priority to KR1019950025719A priority Critical patent/KR970013031A/en
Publication of KR970013031A publication Critical patent/KR970013031A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

접촉창을 형성하는 방법에 대해 기재되어 있다. 이는 반도기판상에 층간절연층을 형성하는 제1 공정, 충간절연층 상에, 접촉창이 형성될 부분의 층간절연층을 노출시키는 모양의 포토네지스트 패턴을 형성하는 제2공정, 결과물 기판 전면 상에, 플라즈마가 증강된 화학기상 증착방식으로 절연막을 형성하는 제3 공정 및 절연막 및 층간절연층을 식각대상물로 한 건식식각을 행함으로써 충간절연층에 접촉창을 형성하는 제4 공정을 포함하는 것을 특징으로 한다. 따라서, 접촉창의 입구부가 과다하게 커지는 것을 방지할 수 있다.A method of forming a contact window is described. This is a first step of forming an interlayer insulating layer on a semiconductor substrate, a second step of forming a photonegative pattern of a shape exposing an interlayer insulating layer of a portion where a contact window is to be formed on the interlayer insulating layer, and on the entire substrate. And a fourth step of forming an insulating film by a chemical vapor deposition method in which plasma is enhanced, and a fourth step of forming a contact window in the interlayer insulating layer by performing dry etching using the insulating film and the interlayer insulating layer as an etching target. It features. Therefore, the inlet of the contact window can be prevented from becoming excessively large.

Description

반도체 장치의 접촉창 형성방법Method of forming contact window of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2A도 내지 제2C도는 본 발명의 방법에 의한 반도체 장치의 접촉창 형성방법을 설형하기 위해 도시한 단면도들이다.2A to 2C are cross-sectional views for explaining a method for forming a contact window of a semiconductor device according to the method of the present invention.

Claims (2)

반도체기판 상에 층간절연층을 형성하는 제1 공정; 층간절연층 상에, 접촉창이 형성될 부분의 상기 충간절연층을 노출시키는 모양의 포토레지스트 패턴을 형성하는 제2 공정; 결과물 기판 전면 상에, 플라즈마 화학기상 증착방식으로 절연막을 형성하는 제3 공정; 및 상기 절연막 및 층간절연층을 식각대상물로 한 건식식각을 행함으로써 상기 층간절연층에 접촉창을 형성하는 제4 공정을 포함하는 것을 특징으로 하는 반도체 장치의 접촉창 형성방법.A first step of forming an interlayer insulating layer on the semiconductor substrate; Forming a photoresist pattern on the interlayer insulating layer, the photoresist pattern having a shape exposing the interlayer insulating layer in a portion where a contact window is to be formed; A third step of forming an insulating film on the entire surface of the resultant substrate by plasma chemical vapor deposition; And a fourth step of forming a contact window in the interlayer insulating layer by performing dry etching using the insulating film and the interlayer insulating layer as an object to be etched. 제1항에 있어서, 상기 절연막은 상기 층간절연층을 구성하는 물질과 동일한 물질로 형성되는 것을 특징으로 하는 반도체 장치의 접촉창 형성방법.The method of claim 1, wherein the insulating layer is formed of the same material as the material constituting the interlayer insulating layer.
KR1019950025719A 1995-08-21 1995-08-21 Method of forming contact window of semiconductor device KR970013031A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950025719A KR970013031A (en) 1995-08-21 1995-08-21 Method of forming contact window of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950025719A KR970013031A (en) 1995-08-21 1995-08-21 Method of forming contact window of semiconductor device

Publications (1)

Publication Number Publication Date
KR970013031A true KR970013031A (en) 1997-03-29

Family

ID=66595912

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950025719A KR970013031A (en) 1995-08-21 1995-08-21 Method of forming contact window of semiconductor device

Country Status (1)

Country Link
KR (1) KR970013031A (en)

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