KR970003596A

KR970003596A - Method of forming fine pattern of semiconductor device

Info

Publication number: KR970003596A
Application number: KR1019950015020A
Authority: KR
Inventors: 김승준; 신기수
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-06-08
Filing date: 1995-06-08
Publication date: 1997-01-28

Abstract

본 발명은 반도체소자의 미세패턴 형성방법에 관한 것으로, 반도체기판 상부에 절연막 및 물질층을 순차적으로 형성하고 상기 물질층 상부에 마스크를 이용하여 감광막패턴을 형성한 다음, 상기 감광막패턴을 마스크로하여 CD가 크게 형성된 부분을 주로하여 상대적으로 빠른 식각속도를 갖고 등방성식각한 다음, 상기 CD가 작게 형성된 부분을 주로하여 이방성식각공정을 실시하여 상기 감광막패턴의 CD와 관계없이 하부의 물질층을 같은 CD를 갖도록 식각함으로써 같은 크기의 물질층패턴을 형성하고 반도체소자의 특성을 유지하여 반도체소자의 신뢰성을 향상시킬 수 있는 기술이다.The present invention relates to a method for forming a fine pattern of a semiconductor device, wherein an insulating film and a material layer are sequentially formed on a semiconductor substrate, and a photoresist pattern is formed on the material layer by using a mask, and then the photoresist pattern is used as a mask. After isotropic etching with a relatively fast etching speed mainly on the portion where the CD is formed large, and then performing anisotropic etching process on the portion where the CD is formed small, the lower material layer is the same as the CD of the photoresist pattern. By etching to have a material layer pattern of the same size and maintaining the characteristics of the semiconductor device is a technology that can improve the reliability of the semiconductor device.

Description

Method of forming fine pattern of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1C도는 본 발명의 실시예에 따른 반도체소자의 미세패턴 형성공정을 도시한 단면도.1C is a cross-sectional view illustrating a process of forming a fine pattern of a semiconductor device according to an embodiment of the present invention.

Claims

A photosensitive film pattern having a CD difference between a cell portion and a peripheral circuit portion of a semiconductor substrate is formed by a lithography process, and an etching process using the photosensitive film pattern forms a fine pattern of a material layer under the photosensitive film pattern with a CD having the same size. A method of forming a fine pattern, comprising: sequentially forming an insulating film, a material layer, and a photoresist pattern on an upper surface of the semiconductor substrate, isotropically etching the material layer using the photoresist pattern as a mask, and using the photoresist pattern as a mask And anisotropically etching the remaining portion of the material layer to form a material layer pattern.

The method of claim 1, wherein the isotropic etching process is performed using a pressure of 500 to 230 mTorr in the etching chamber.

The method of claim 1, wherein the isotropic etching process uses CF4 gas.

The method of claim 1, wherein the isotropic etching degree of the isotropic etching process is 2 to 25%.

The method of claim 1, wherein the isotropic etching process is performed at the cell portion at a speed of 10 to 80% of the peripheral circuit portion.

The method of claim 1, wherein the anisotropic etching process uses C12 gas.

※ Note: The disclosure is based on the initial application.