KR960026209A - Fine contact formation method - Google Patents

Fine contact formation method Download PDF

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Publication number
KR960026209A
KR960026209A KR1019940039070A KR19940039070A KR960026209A KR 960026209 A KR960026209 A KR 960026209A KR 1019940039070 A KR1019940039070 A KR 1019940039070A KR 19940039070 A KR19940039070 A KR 19940039070A KR 960026209 A KR960026209 A KR 960026209A
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KR
South Korea
Prior art keywords
contact
forming
insulating film
photoresist pattern
contact hole
Prior art date
Application number
KR1019940039070A
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Korean (ko)
Inventor
이창혁
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019940039070A priority Critical patent/KR960026209A/en
Publication of KR960026209A publication Critical patent/KR960026209A/en

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Abstract

본 발명은 미세콘택 형성방법에 관한 것으로, 반도체기판 상부에 절연막을 형성하고 최소크기의 콘택마스크를 이용한 시각공정으로 콘택홀을 형성한 다음, 상기 콘택홀의 측벽에만 선택적 성장 절연막을 형성함으로써 미세콘택홀을 형성하는 상기 반도체기판에 접속되도록 콘택물질층을 콘택시킴으로써 미세콘택을 형성하여 반도체소자의 /고집적화를 가능하게 하는 기술이다.The present invention relates to a method for forming a micro contact, wherein an insulating film is formed on a semiconductor substrate and a contact hole is formed by a visual process using a minimum size contact mask, and then a selective growth insulating film is formed only on the sidewalls of the contact hole. By contacting the contact material layer so as to be connected to the semiconductor substrate to form a micro-contact is a technology that enables the / high integration of the semiconductor device.

Description

미세콘택 형성방법Fine contact formation method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래기술의 실시예에 따라 형성된 미세콘택 형성방법을 도시한 단면도, 제2도는 본 발명의 실시예에 따른 미세콘택 형성방법을 도시한 단면도.1 is a cross-sectional view showing a method for forming a micro contact according to an embodiment of the prior art, Figure 2 is a cross-sectional view showing a method for forming a micro contact according to an embodiment of the present invention.

Claims (4)

고집적화된 반도체소자의 미세콘택 형성방법에 있어서, 반도체기판 상부에 절연막을 형성하는 공정과, 콘택마스크를 이용하여 감광막패턴을 형성하는 공정과, 상기 감광막패턴을 마스크로하여 상기 절연막을 제거하여 콘택홀을 형성하는 공정과, 상기 콘택홀 측벽을 선택성장시켜 선택적 성장 절연막을 형성하는 공정과, 상기 감광막패턴을 제거하는 공정과, 상기 콘택홀을 통하여 상기 반도체기판에 접속되는 콘택물질층을 콘택시키는 공정을 포함하는 미세콘택 형성방법.A method for forming a highly contacted semiconductor device, comprising: forming an insulating film on an upper surface of a semiconductor substrate, forming a photoresist pattern using a contact mask, and removing the insulating film using the photoresist pattern as a mask to form a contact hole. Forming a selective growth insulating film by selectively growing the contact hole sidewalls; removing the photoresist pattern; and contacting the contact material layer connected to the semiconductor substrate through the contact hole. Microcontact forming method comprising a. 제1항에 있어서, 상기 절연막은 산화막이 사용되는 것을 특징으로 하는 미세콘택 형성방법.The method of claim 1, wherein the insulating film is an oxide film is used. 제1항에 있어서, 상기 콘택마스크는 최소크기로 형성된 것을 특징으로 하는 미세콘택 형성방법.The method of claim 1, wherein the contact mask is formed to a minimum size. 제1항에 있어서, 상기 선택성장공정은 상기 감광막패턴을 성장장벽을 하여 실시되는 것을 특징으로 하는 미세콘택 형성방법.The method of claim 1, wherein the selective growth process is performed using the photoresist pattern as a growth barrier. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940039070A 1994-12-29 1994-12-29 Fine contact formation method KR960026209A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940039070A KR960026209A (en) 1994-12-29 1994-12-29 Fine contact formation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940039070A KR960026209A (en) 1994-12-29 1994-12-29 Fine contact formation method

Publications (1)

Publication Number Publication Date
KR960026209A true KR960026209A (en) 1996-07-22

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940039070A KR960026209A (en) 1994-12-29 1994-12-29 Fine contact formation method

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KR (1) KR960026209A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557026B2 (en) 2006-10-20 2009-07-07 Samsung Electronics Co., Ltd. Contact structure and method of forming the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557026B2 (en) 2006-10-20 2009-07-07 Samsung Electronics Co., Ltd. Contact structure and method of forming the same

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