KR970018081A - Contact hole formation method of semiconductor device - Google Patents
Contact hole formation method of semiconductor device Download PDFInfo
- Publication number
- KR970018081A KR970018081A KR1019950033162A KR19950033162A KR970018081A KR 970018081 A KR970018081 A KR 970018081A KR 1019950033162 A KR1019950033162 A KR 1019950033162A KR 19950033162 A KR19950033162 A KR 19950033162A KR 970018081 A KR970018081 A KR 970018081A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- oxide film
- etching
- contact hole
- film
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
본 발명은 반도체소자의 콘택홀 형성방법에 관한 것으로, 반도체기판 상부에 물질층패턴을 형성하고 전체표면상부를 평탄화시키는 제1산화막을 형성한 다음, 상기 제2산화막 상부에 일정두께 질화막을 형성하고 콘택마스크를 이용한 식각공정으로 상기 질화막고 일정두께의 제1산화막을 식각한 다음, 전체표면상부에 일정두께 제2산화막을 형성하고 이를 이방성식각하여 제2산화막 스페이서를 형성한 다음, 상기 질화막과 제2산화막 스페이서를 마스크로하여 과도식각함으로써 상기 반도체기판의 예정된 부분을 노출시키는 콘택홀을 형성하여 타층의 손상없이 예정된 부분에 예정된 크기의 콘택홀을 형성함으로써 반도체소자의 특성 및 신뢰성을 향상시키고 반도체소자의 고집적화를 가능하게 하는 기술이다.The present invention relates to a method for forming a contact hole in a semiconductor device, comprising forming a material layer pattern on a semiconductor substrate and forming a first oxide film to planarize an entire surface thereof, and then forming a nitride film having a predetermined thickness on the second oxide film. After etching the nitride film and the first oxide film having a predetermined thickness by an etching process using a contact mask, a second oxide film having a predetermined thickness is formed on the entire surface and anisotropically etched to form a second oxide spacer, and then the nitride film and the By over-etching with a double oxide spacer as a mask to form a contact hole exposing a predetermined portion of the semiconductor substrate to form a contact hole of a predetermined size in the predetermined portion without damaging other layers to improve the characteristics and reliability of the semiconductor device It is a technology that enables high integration.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2A도 내지 제2D도는 본 발명의 실시예에 따른 반도체소자의 콘택홀 형성공정을 도시한 단면도.2A to 2D are cross-sectional views showing a contact hole forming process of a semiconductor device according to an embodiment of the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950033162A KR970018081A (en) | 1995-09-29 | 1995-09-29 | Contact hole formation method of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950033162A KR970018081A (en) | 1995-09-29 | 1995-09-29 | Contact hole formation method of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970018081A true KR970018081A (en) | 1997-04-30 |
Family
ID=66582394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950033162A KR970018081A (en) | 1995-09-29 | 1995-09-29 | Contact hole formation method of semiconductor device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970018081A (en) |
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1995
- 1995-09-29 KR KR1019950033162A patent/KR970018081A/en not_active Application Discontinuation
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