KR970053409A - Device Separation Method of Semiconductor Device - Google Patents

Abstract

The present invention relates to a method for manufacturing a device isolation film of a semiconductor device, the present invention in the process of forming a device isolation film of the trench structure, after the oxide film is sufficiently deposited so that the trench is buried, the pressure of the etching chamber is increased, the etching The oxide film is etched flat by causing collision of gases to be used for etching in the interior.

Description

Device Separation Method of Semiconductor Device

As this is a public information case, the full text was not included.

2A through 2E are diagrams illustrating a process of fabricating an isolation layer of a semiconductor device in accordance with an embodiment of the present invention.

Claims (2)

Forming a pad oxide film and a nitride film on the semiconductor substrate, forming a photoresist pattern for forming a device isolation region on the nitride film, and forming a nitride film pattern and a pad oxide pattern by using the photoresist pattern Subsequently etching the semiconductor substrate to form a trench, removing the photoresist pattern, forming an oxide film on the entire surface of the structure, and setting the pressure of the etching chamber to 500 to 150 mTorr or more. Etching the oxide layer until the nitride layer pattern is exposed by causing an impact of an etching gas therein, and etching and planarizing the nitride layer pattern, the pad underlayer pattern, and the oxide layer until the semiconductor substrate is exposed. Device isolation film manufacturing method of a semiconductor device, characterized in that. The method of claim 1, wherein an aspect ratio of the trench is in a range of about 1 to about 5. ※ Note: The disclosure is based on the initial application.