KR970052397A - Manufacturing Method of Semiconductor Device - Google Patents

Manufacturing Method of Semiconductor Device Download PDF

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Publication number
KR970052397A
KR970052397A KR1019950059335A KR19950059335A KR970052397A KR 970052397 A KR970052397 A KR 970052397A KR 1019950059335 A KR1019950059335 A KR 1019950059335A KR 19950059335 A KR19950059335 A KR 19950059335A KR 970052397 A KR970052397 A KR 970052397A
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KR
South Korea
Prior art keywords
contact hole
semiconductor substrate
forming
manufacturing
etching
Prior art date
Application number
KR1019950059335A
Other languages
Korean (ko)
Inventor
한준호
정민제
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950059335A priority Critical patent/KR970052397A/en
Publication of KR970052397A publication Critical patent/KR970052397A/en

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Abstract

본 발명은 건식 식각 공정에 의한 콘택 홀의 형성과 동시에 콘택 홀 부위에 노출된 반도체 기판상에 실리콘 처리를 하므로써, 반도체 장치의 제조 공정을 단순화한 반도체 장치의 제조 방법에 관한 것이다. 특히, 반응가스로서 O2/CF4가스를 사용하여 콘택홀을 형성하기 위한 식각 공정과 콘택 홀 부위의 반도체 기판상에 실리콘 처리하는 공정을 하나의 공정에서 실시하므로써, 공정 단순화 및 반도체 장치의 수율 및 품질을 향상시킬 수 있게 된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device by simplifying the manufacturing process of a semiconductor device by performing a silicon treatment on a semiconductor substrate exposed to a contact hole portion at the same time as forming a contact hole by a dry etching process. In particular, the etching process for forming the contact hole using the O 2 / CF 4 gas as the reaction gas and the silicon treatment on the semiconductor substrate in the contact hole region are performed in one process, thereby simplifying the process and yield of the semiconductor device. And quality can be improved.

Description

반도체 장치의 제조방법Manufacturing Method of Semiconductor Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 및 제2B도는 본 발명의 실시예에 따라 반도체 장치를 제조하는 공정들을 보여주는 단면도.2A and 2B are cross-sectional views illustrating processes for manufacturing a semiconductor device in accordance with an embodiment of the present invention.

Claims (4)

반도체 기판(110)상에 산화막(120), 포토 레지스트막(130)을 차례로 형성하는 공정과, 상기의 포토 레지스트막(130)을 소정의 패턴에 따라 패터닝하는 공정과, 상기의 패터닝된 포토 레지스트막(130)을 마스크로 하여 그 하부의 산화막(120)의 일부를 선택적으로 식각하여 반도체 기판(110)상에 콘택 홀(140)을 형성하는 공정과, 상기의 남아 있는 산화막(120)을 선택적으로 식각하여 반도체 기판(110)상에 콘택 홀(140)을 형성함과 동시에 콘택 홀(140) 부위에 노출된 반도체 기판(110)상에 실리콘 처리하는 공정을 포함하는 것을 특징으로 하는 반도체 장치의 제조방법.A step of sequentially forming an oxide film 120 and a photoresist film 130 on the semiconductor substrate 110, a step of patterning the photoresist film 130 according to a predetermined pattern, and the patterned photoresist described above Forming a contact hole 140 on the semiconductor substrate 110 by selectively etching a portion of the oxide film 120 below using the film 130 as a mask, and selectively selecting the remaining oxide film 120 on the semiconductor substrate 110. Forming a contact hole 140 on the semiconductor substrate 110 by etching the same, and simultaneously processing a silicon on the semiconductor substrate 110 exposed to the contact hole 140. Manufacturing method. 제1항에 있어서, 상기 산화막(120)의 일부를 식각하는 방법은 등방성 식각인 것을 특징으로 하는 반도체 장치의 제조방법.The method of claim 1, wherein the etching of a portion of the oxide layer is isotropic etching. 제1항에 있어서, 상기의 콘택 홀(140)을 형성함과 동시에 콘택 홀(140) 부위에 노출된 반도체 기판(110)상에 실리콘 처리하는 공정에서의 반응 가스는 O2/CF4가스인 것을 특징으로 하는 반도체 장치의 제조방법.The reaction gas of claim 1, wherein the reaction gas in the process of forming a silicon on the semiconductor substrate 110 exposed to a portion of the contact hole 140 while forming the contact hole 140 is an O 2 / CF 4 gas. A semiconductor device manufacturing method characterized by the above-mentioned. 제1항에 있어서, 상기의 콘택 홀(140)을 형성함과 동시에 콘택 홀(140) 부위에 노출된 반도체 기판(110)상에 실리콘 처리하는 식각 방법은 이방성 식각인 것을 특징으로 하는 반도체 장치의 제조방법.The semiconductor device of claim 1, wherein the etching method of forming the contact hole 140 and processing the silicon on the semiconductor substrate 110 exposed to the contact hole 140 is anisotropic etching. Manufacturing method. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950059335A 1995-12-27 1995-12-27 Manufacturing Method of Semiconductor Device KR970052397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950059335A KR970052397A (en) 1995-12-27 1995-12-27 Manufacturing Method of Semiconductor Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059335A KR970052397A (en) 1995-12-27 1995-12-27 Manufacturing Method of Semiconductor Device

Publications (1)

Publication Number Publication Date
KR970052397A true KR970052397A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950059335A KR970052397A (en) 1995-12-27 1995-12-27 Manufacturing Method of Semiconductor Device

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KR (1) KR970052397A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100506876B1 (en) * 2002-10-25 2005-08-04 주식회사 하이닉스반도체 Manufacturing method for semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100506876B1 (en) * 2002-10-25 2005-08-04 주식회사 하이닉스반도체 Manufacturing method for semiconductor device

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