KR970052397A - Manufacturing Method of Semiconductor Device - Google Patents
Manufacturing Method of Semiconductor Device Download PDFInfo
- Publication number
- KR970052397A KR970052397A KR1019950059335A KR19950059335A KR970052397A KR 970052397 A KR970052397 A KR 970052397A KR 1019950059335 A KR1019950059335 A KR 1019950059335A KR 19950059335 A KR19950059335 A KR 19950059335A KR 970052397 A KR970052397 A KR 970052397A
- Authority
- KR
- South Korea
- Prior art keywords
- contact hole
- semiconductor substrate
- forming
- manufacturing
- etching
- Prior art date
Links
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- Drying Of Semiconductors (AREA)
Abstract
본 발명은 건식 식각 공정에 의한 콘택 홀의 형성과 동시에 콘택 홀 부위에 노출된 반도체 기판상에 실리콘 처리를 하므로써, 반도체 장치의 제조 공정을 단순화한 반도체 장치의 제조 방법에 관한 것이다. 특히, 반응가스로서 O2/CF4가스를 사용하여 콘택홀을 형성하기 위한 식각 공정과 콘택 홀 부위의 반도체 기판상에 실리콘 처리하는 공정을 하나의 공정에서 실시하므로써, 공정 단순화 및 반도체 장치의 수율 및 품질을 향상시킬 수 있게 된다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor device by simplifying the manufacturing process of a semiconductor device by performing a silicon treatment on a semiconductor substrate exposed to a contact hole portion at the same time as forming a contact hole by a dry etching process. In particular, the etching process for forming the contact hole using the O 2 / CF 4 gas as the reaction gas and the silicon treatment on the semiconductor substrate in the contact hole region are performed in one process, thereby simplifying the process and yield of the semiconductor device. And quality can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제2A도 및 제2B도는 본 발명의 실시예에 따라 반도체 장치를 제조하는 공정들을 보여주는 단면도.2A and 2B are cross-sectional views illustrating processes for manufacturing a semiconductor device in accordance with an embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950059335A KR970052397A (en) | 1995-12-27 | 1995-12-27 | Manufacturing Method of Semiconductor Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950059335A KR970052397A (en) | 1995-12-27 | 1995-12-27 | Manufacturing Method of Semiconductor Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970052397A true KR970052397A (en) | 1997-07-29 |
Family
ID=66618746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950059335A KR970052397A (en) | 1995-12-27 | 1995-12-27 | Manufacturing Method of Semiconductor Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970052397A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506876B1 (en) * | 2002-10-25 | 2005-08-04 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
-
1995
- 1995-12-27 KR KR1019950059335A patent/KR970052397A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100506876B1 (en) * | 2002-10-25 | 2005-08-04 | 주식회사 하이닉스반도체 | Manufacturing method for semiconductor device |
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